FETs, MOSFETs - Arrays - Zui Ai Technology（Taiwan）Company.

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		Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Operating Temperature	Package / Case	Supplier Device Package	Power - Max	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
		Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Operating Temperature	Package / Case	Supplier Device Package	Power - Max	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
			DMP4047SSD-13	Diodes Incorporated	2,500	3 days	-	MOSFET 2P-CH 40V 5.1A 8SOIC MOQ: 1 MPQ: 1	MOSFET 2P-CH 40V 5.1A 8SOIC	Tape & Reel (TR)	-	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	1.3W	2 P-Channel (Dual)	Logic Level Gate	40V	45 mOhm @ 4.4A，10V	3V @ 250μA	21.5nC @ 10V	1154pF @ 20V
			DMP4047SSD-13	Diodes Incorporated	2,703	3 days	-	MOSFET 2P-CH 40V 5.1A 8SOIC MOQ: 1 MPQ: 1	MOSFET 2P-CH 40V 5.1A 8SOIC	Cut Tape (CT)	-	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	1.3W	2 P-Channel (Dual)	Logic Level Gate	40V	45 mOhm @ 4.4A，10V	3V @ 250μA	21.5nC @ 10V	1154pF @ 20V
			DMP4047SSD-13	Diodes Incorporated	2,703	3 days	-	MOSFET 2P-CH 40V 5.1A 8SOIC MOQ: 1 MPQ: 1	MOSFET 2P-CH 40V 5.1A 8SOIC	-	-	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	1.3W	2 P-Channel (Dual)	Logic Level Gate	40V	45 mOhm @ 4.4A，10V	3V @ 250μA	21.5nC @ 10V	1154pF @ 20V
			AUIRF7341QTR	Infineon Technologies	Inquiry	-	-	MOSFET 2N-CH 55V 5.1A 8SOIC MOQ: 1 MPQ: 1	MOSFET 2N-CH 55V 5.1A 8SOIC	Tape & Reel (TR)	Automotive，AEC-Q101，HEXFET	-55°C ~ 175°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	2.4W	2 N-Channel (Dual)	Logic Level Gate	55V	50 mOhm @ 5.1A，10V	3V @ 250μA	44nC @ 10V	780pF @ 25V
			AUIRF7341QTR	Infineon Technologies	1,057	3 days	-	MOSFET 2N-CH 55V 5.1A 8SOIC MOQ: 1 MPQ: 1	MOSFET 2N-CH 55V 5.1A 8SOIC	Cut Tape (CT)	Automotive，AEC-Q101，HEXFET	-55°C ~ 175°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	2.4W	2 N-Channel (Dual)	Logic Level Gate	55V	50 mOhm @ 5.1A，10V	3V @ 250μA	44nC @ 10V	780pF @ 25V
			AUIRF7341QTR	Infineon Technologies	1,057	3 days	-	MOSFET 2N-CH 55V 5.1A 8SOIC MOQ: 1 MPQ: 1	MOSFET 2N-CH 55V 5.1A 8SOIC	-	Automotive，AEC-Q101，HEXFET	-55°C ~ 175°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	2.4W	2 N-Channel (Dual)	Logic Level Gate	55V	50 mOhm @ 5.1A，10V	3V @ 250μA	44nC @ 10V	780pF @ 25V
			DMC1030UFDBQ-7	Diodes Incorporated	Inquiry	-	-	MOSFET N/P-CH 12V 5.1A UDFN2020 MOQ: 1 MPQ: 1	MOSFET N/P-CH 12V 5.1A UDFN2020	Tape & Reel (TR)	Automotive，AEC-Q101	-55°C ~ 150°C (TJ)	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)	1.36W	N and P-Channel Complementary	Standard	12V	34 mOhm @ 4.6A，4.5V	1V @ 250μA	23.1nC @ 10V	1003pF @ 6V
			DMC1030UFDBQ-7	Diodes Incorporated	Inquiry	-	-	MOSFET N/P-CH 12V 5.1A UDFN2020 MOQ: 1 MPQ: 1	MOSFET N/P-CH 12V 5.1A UDFN2020	Cut Tape (CT)	Automotive，AEC-Q101	-55°C ~ 150°C (TJ)	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)	1.36W	N and P-Channel Complementary	Standard	12V	34 mOhm @ 4.6A，4.5V	1V @ 250μA	23.1nC @ 10V	1003pF @ 6V
			DMC1030UFDBQ-7	Diodes Incorporated	Inquiry	-	-	MOSFET N/P-CH 12V 5.1A UDFN2020 MOQ: 1 MPQ: 1	MOSFET N/P-CH 12V 5.1A UDFN2020	-	Automotive，AEC-Q101	-55°C ~ 150°C (TJ)	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)	1.36W	N and P-Channel Complementary	Standard	12V	34 mOhm @ 4.6A，4.5V	1V @ 250μA	23.1nC @ 10V	1003pF @ 6V
			DMC1030UFDBQ-13	Diodes Incorporated	Inquiry	-	-	MOSFET N/P-CH 12V 5.1A UDFN2020 MOQ: 1 MPQ: 1	MOSFET N/P-CH 12V 5.1A UDFN2020	Tape & Reel (TR)	Automotive，AEC-Q101	-55°C ~ 150°C (TJ)	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)	1.36W	N and P-Channel Complementary	Standard	12V	34 mOhm @ 4.6A，4.5V	1V @ 250μA	23.1nC @ 10V	1003pF @ 6V
			HUFA76413DK8T-F085	ON Semiconductor	Inquiry	-	-	MOSFET 2N-CH 60V 5.1A 8-SO MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 5.1A 8-SO	Tape & Reel (TR)	Automotive，AEC-Q101，UltraFET	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	2.5W	2 N-Channel (Dual)	Logic Level Gate	60V	49 mOhm @ 5.1A，10V	3V @ 250μA	23nC @ 10V	620pF @ 25V
			IRF7341GTRPBF	Infineon Technologies	Inquiry	-	-	MOSFET N-CH 55V 5.1A MOQ: 1 MPQ: 1	MOSFET N-CH 55V 5.1A	Tape & Reel (TR)	HEXFET	-55°C ~ 175°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	2.4W	2 N-Channel (Dual)	Standard	55V	50 mOhm @ 5.1A，10V	1V @ 250μA (Min)	44nC @ 10V	780pF @ 25V
			HUFA76413DK8T	ON Semiconductor	Inquiry	-	-	MOSFET 2N-CH 60V 5.1A 8-SO MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 5.1A 8-SO	Tape & Reel (TR)	UltraFET	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	2.5W	2 N-Channel (Dual)	Logic Level Gate	60V	49 mOhm @ 5.1A，10V	3V @ 250μA	23nC @ 10V	620pF @ 25V
			HUFA76413DK8T	ON Semiconductor	Inquiry	-	-	MOSFET 2N-CH 60V 5.1A 8-SO MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 5.1A 8-SO	Cut Tape (CT)	UltraFET	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	2.5W	2 N-Channel (Dual)	Logic Level Gate	60V	49 mOhm @ 5.1A，10V	3V @ 250μA	23nC @ 10V	620pF @ 25V
			HUFA76413DK8T	ON Semiconductor	Inquiry	-	-	MOSFET 2N-CH 60V 5.1A 8-SO MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 5.1A 8-SO	-	UltraFET	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	2.5W	2 N-Channel (Dual)	Logic Level Gate	60V	49 mOhm @ 5.1A，10V	3V @ 250μA	23nC @ 10V	620pF @ 25V
			IRF7341QTRPBF	Infineon Technologies	Inquiry	-	-	MOSFET 2N-CH 55V 5.1A 8-SOIC MOQ: 1 MPQ: 1	MOSFET 2N-CH 55V 5.1A 8-SOIC	Cut Tape (CT)	HEXFET	-55°C ~ 175°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	2.4W	2 N-Channel (Dual)	Logic Level Gate	55V	50 mOhm @ 5.1A，10V	1V @ 250μA	44nC @ 10V	780pF @ 25V
			IRF7341QTRPBF	Infineon Technologies	Inquiry	-	-	MOSFET 2N-CH 55V 5.1A 8-SOIC MOQ: 1 MPQ: 1	MOSFET 2N-CH 55V 5.1A 8-SOIC	-	HEXFET	-55°C ~ 175°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	2.4W	2 N-Channel (Dual)	Logic Level Gate	55V	50 mOhm @ 5.1A，10V	1V @ 250μA	44nC @ 10V	780pF @ 25V
			AUIRF7341Q	Infineon Technologies	Inquiry	-	-	MOSFET 2N-CH 55V 5.1A 8SOIC MOQ: 1 MPQ: 1	MOSFET 2N-CH 55V 5.1A 8SOIC	Tube	HEXFET	-55°C ~ 175°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	2.4W	2 N-Channel (Dual)	Logic Level Gate	55V	50 mOhm @ 5.1A，10V	3V @ 250μA	44nC @ 10V	780pF @ 25V

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