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- Packaging：
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- Operating Temperature：
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- Package / Case：
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- FET Feature：
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- Rds On (Max) @ Id，Vgs：
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- Vgs(th) (Max) @ Id：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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Discover 12 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Diodes Incorporated |
5,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 9.5A 8SO
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.28W | 2 N-Channel (Dual) | Logic Level Gate | 20V | 16 mOhm @ 9.4A，4.5V | 1.5V @ 250μA | 26nC @ 10V | 1149pF @ 10V | ||
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Diodes Incorporated |
5,226
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 9.5A 8SO
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Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.28W | 2 N-Channel (Dual) | Logic Level Gate | 20V | 16 mOhm @ 9.4A，4.5V | 1.5V @ 250μA | 26nC @ 10V | 1149pF @ 10V | ||
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Diodes Incorporated |
5,226
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 9.5A 8SO
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- | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.28W | 2 N-Channel (Dual) | Logic Level Gate | 20V | 16 mOhm @ 9.4A，4.5V | 1.5V @ 250μA | 26nC @ 10V | 1149pF @ 10V | ||
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EPC |
5,500
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2NCH 80V 9.5A DIE
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Tape & Reel (TR) | eGaN | -40°C ~ 150°C (TJ) | Die | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 14.5 mOhm @ 20A，5V | 2.5V @ 2.5mA | 2.5nC @ 5V | 300pF @ 40V | ||
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EPC |
5,742
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2NCH 80V 9.5A DIE
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Cut Tape (CT) | eGaN | -40°C ~ 150°C (TJ) | Die | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 14.5 mOhm @ 20A，5V | 2.5V @ 2.5mA | 2.5nC @ 5V | 300pF @ 40V | ||
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EPC |
5,742
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2NCH 80V 9.5A DIE
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- | eGaN | -40°C ~ 150°C (TJ) | Die | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 14.5 mOhm @ 20A，5V | 2.5V @ 2.5mA | 2.5nC @ 5V | 300pF @ 40V | ||
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Diodes Incorporated |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 9.5A 8SO
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.19W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 15 mOhm @ 9A，10V | 2.4V @ 250μA | 42nC @ 10V | 1932pF @ 15V | ||
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Diodes Incorporated |
1,190
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 9.5A 8SO
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Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.19W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 15 mOhm @ 9A，10V | 2.4V @ 250μA | 42nC @ 10V | 1932pF @ 15V | ||
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Diodes Incorporated |
1,190
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 9.5A 8SO
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- | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.19W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 15 mOhm @ 9A，10V | 2.4V @ 250μA | 42nC @ 10V | 1932pF @ 15V | ||
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Diodes Incorporated |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 9.5A 8SO
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.28W | 2 N-Channel (Dual) | Standard | 20V | 16 mOhm @ 9.4A，4.5V | 1.5V @ 250μA | 26nC @ 10V | 1149pF @ 10V | ||
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Diodes Incorporated |
2,260
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 9.5A 8SO
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Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.28W | 2 N-Channel (Dual) | Standard | 20V | 16 mOhm @ 9.4A，4.5V | 1.5V @ 250μA | 26nC @ 10V | 1149pF @ 10V | ||
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Diodes Incorporated |
2,260
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 9.5A 8SO
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- | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.28W | 2 N-Channel (Dual) | Standard | 20V | 16 mOhm @ 9.4A，4.5V | 1.5V @ 250μA | 26nC @ 10V | 1149pF @ 10V |
