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Discover 26 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Infineon Technologies |
4,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 55V 4.7A 8-SOIC
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Tape & Reel (TR) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 N-Channel (Dual) | Logic Level Gate | 55V | 50 mOhm @ 4.7A，10V | 1V @ 250μA | 36nC @ 10V | 740pF @ 25V | ||
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Infineon Technologies |
6,255
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 55V 4.7A 8-SOIC
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Cut Tape (CT) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 N-Channel (Dual) | Logic Level Gate | 55V | 50 mOhm @ 4.7A，10V | 1V @ 250μA | 36nC @ 10V | 740pF @ 25V | ||
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Infineon Technologies |
6,255
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 55V 4.7A 8-SOIC
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- | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 N-Channel (Dual) | Logic Level Gate | 55V | 50 mOhm @ 4.7A，10V | 1V @ 250μA | 36nC @ 10V | 740pF @ 25V | ||
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ON Semiconductor |
7,500
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 80V 4.7A 8-SO
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Tape & Reel (TR) | PowerTrench | -55°C ~ 175°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 900mW | 2 N-Channel (Dual) | Logic Level Gate | 80V | 44 mOhm @ 4.7A，10V | 4V @ 250μA | 35nC @ 10V | 1180pF @ 40V | ||
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ON Semiconductor |
9,284
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 80V 4.7A 8-SO
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Cut Tape (CT) | PowerTrench | -55°C ~ 175°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 900mW | 2 N-Channel (Dual) | Logic Level Gate | 80V | 44 mOhm @ 4.7A，10V | 4V @ 250μA | 35nC @ 10V | 1180pF @ 40V | ||
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ON Semiconductor |
9,284
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 80V 4.7A 8-SO
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- | PowerTrench | -55°C ~ 175°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 900mW | 2 N-Channel (Dual) | Logic Level Gate | 80V | 44 mOhm @ 4.7A，10V | 4V @ 250μA | 35nC @ 10V | 1180pF @ 40V | ||
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Infineon Technologies |
4,314
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 55V 4.7A 8-SOIC
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Tube | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 N-Channel (Dual) | Logic Level Gate | 55V | 50 mOhm @ 4.7A，10V | 1V @ 250μA | 36nC @ 10V | 740pF @ 25V | ||
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Infineon Technologies |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 4.7A 8SOIC
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Tape & Reel (TR) | OptiMOS | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | P-DSO-8 | 2W | 2 P-Channel (Dual) | Logic Level Gate | 20V | 67 mOhm @ 4.7A，4.5V | 1.2V @ 25μA | 23.9nC @ 4.5V | 920pF @ 15V | ||
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Infineon Technologies |
1,380
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 4.7A 8SOIC
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Cut Tape (CT) | OptiMOS | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | P-DSO-8 | 2W | 2 P-Channel (Dual) | Logic Level Gate | 20V | 67 mOhm @ 4.7A，4.5V | 1.2V @ 25μA | 23.9nC @ 4.5V | 920pF @ 15V | ||
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Diodes Incorporated |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 4.7A 6UDFN
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) | 1.4W | 2 N-Channel (Dual) | Standard | 20V | 40 mOhm @ 4.2A，4.5V | 1.4V @ 250μA | 15nC @ 8V | 713pF @ 10V | ||
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Infineon Technologies |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 4.7A 8-TSSOP
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Tape & Reel (TR) | HEXFET | -55°C ~ 150°C (TJ) | 8-TSSOP (0.173"，4.40mm Width) | 8-TSSOP | 1W | 2 P-Channel (Dual) | Logic Level Gate | 20V | 30 mOhm @ 4.7A，4.5V | 1.2V @ 250μA | 39nC @ 5V | 1700pF @ 15V | ||
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Infineon Technologies |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 4.7A 8-TSSOP
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Cut Tape (CT) | HEXFET | -55°C ~ 150°C (TJ) | 8-TSSOP (0.173"，4.40mm Width) | 8-TSSOP | 1W | 2 P-Channel (Dual) | Logic Level Gate | 20V | 30 mOhm @ 4.7A，4.5V | 1.2V @ 250μA | 39nC @ 5V | 1700pF @ 15V | ||
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Infineon Technologies |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 4.7A 8-TSSOP
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Tube | HEXFET | -55°C ~ 150°C (TJ) | 8-TSSOP (0.173"，4.40mm Width) | 8-TSSOP | 1W | 2 P-Channel (Dual) | Logic Level Gate | 20V | 30 mOhm @ 4.7A，4.5V | 1.2V @ 250μA | 39nC @ 5V | 1700pF @ 15V | ||
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Infineon Technologies |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 4.7A 8TSSOP
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Tape & Reel (TR) | HEXFET | -55°C ~ 150°C (TJ) | 8-TSSOP (0.173"，4.40mm Width) | 8-TSSOP | 1W | 2 P-Channel (Dual) | Logic Level Gate | 20V | 30 mOhm @ 4.7A，4.5V | 1.2V @ 250μA | 39nC @ 5V | 1700pF @ 15V | ||
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Infineon Technologies |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 4.7A 8TSSOP
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Cut Tape (CT) | HEXFET | -55°C ~ 150°C (TJ) | 8-TSSOP (0.173"，4.40mm Width) | 8-TSSOP | 1W | 2 P-Channel (Dual) | Logic Level Gate | 20V | 30 mOhm @ 4.7A，4.5V | 1.2V @ 250μA | 39nC @ 5V | 1700pF @ 15V | ||
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Infineon Technologies |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 4.7A 8TSSOP
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- | HEXFET | -55°C ~ 150°C (TJ) | 8-TSSOP (0.173"，4.40mm Width) | 8-TSSOP | 1W | 2 P-Channel (Dual) | Logic Level Gate | 20V | 30 mOhm @ 4.7A，4.5V | 1.2V @ 250μA | 39nC @ 5V | 1700pF @ 15V | ||
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Infineon Technologies |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 4.7A 8TSSOP
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Tape & Reel (TR) | HEXFET | -55°C ~ 150°C (TJ) | 8-TSSOP (0.173"，4.40mm Width) | 8-TSSOP | 1W | 2 P-Channel (Dual) | Logic Level Gate | 20V | 30 mOhm @ 4.7A，4.5V | 1.2V @ 250μA | 39nC @ 5V | 1700pF @ 15V | ||
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Infineon Technologies |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 4.7A 8TSSOP
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Cut Tape (CT) | HEXFET | -55°C ~ 150°C (TJ) | 8-TSSOP (0.173"，4.40mm Width) | 8-TSSOP | 1W | 2 P-Channel (Dual) | Logic Level Gate | 20V | 30 mOhm @ 4.7A，4.5V | 1.2V @ 250μA | 39nC @ 5V | 1700pF @ 15V | ||
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Infineon Technologies |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 4.7A 8TSSOP
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- | HEXFET | -55°C ~ 150°C (TJ) | 8-TSSOP (0.173"，4.40mm Width) | 8-TSSOP | 1W | 2 P-Channel (Dual) | Logic Level Gate | 20V | 30 mOhm @ 4.7A，4.5V | 1.2V @ 250μA | 39nC @ 5V | 1700pF @ 15V | ||
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Diodes Incorporated |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 4.7A 6UDFN
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) | 1.4W | 2 N-Channel (Dual) | Standard | 20V | 40 mOhm @ 4.2A，4.5V | 1.4V @ 250μA | 15nC @ 8V | 713pF @ 10V |
