Supplier Device Package:
Power - Max:
Drain to Source Voltage (Vdss):
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 3 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Package / Case Supplier Device Package Mounting Type Power - Max FET Feature Drain to Source Voltage (Vdss) Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
IRFI4019H-117P
Infineon Technologies
402
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 150V 8.7A TO-220FP
Tube - TO-220-5 Full Pack TO-220-5 Full-Pak Through Hole 18W Standard 150V 95 mOhm @ 5.2A,10V 4.9V @ 50μA 20nC @ 10V 810pF @ 25V
FDM2509NZ
ON Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 8.7A 2X5MLP
Tape & Reel (TR) PowerTrench 6-WFDFN Exposed Pad 6-MicroFET (2x5) Surface Mount 800mW Logic Level Gate 20V 18 mOhm @ 8.7A,4.5V 1.5V @ 250μA 17nC @ 4.5V 1200pF @ 10V
IRFI4019HG-117P
Infineon Technologies
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 150V 8.7A TO-220FP
Tube - TO-220-5 Full Pack (Formed Leads) TO-220-5 Full-Pak Through Hole 18W Standard 150V 95 mOhm @ 5.2A,10V 4.9V @ 50μA 20nC @ 10V 810pF @ 25V