Package / Case:
Supplier Device Package:
Power - Max:
Drain to Source Voltage (Vdss):
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 6 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Package / Case Supplier Device Package Mounting Type Power - Max FET Type Drain to Source Voltage (Vdss) Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
FDY1002PZ
ON Semiconductor
3,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 0.83A SC89-6
Tape & Reel (TR) PowerTrench SOT-563,SOT-666 SC-89-6 Surface Mount 446mW 2 P-Channel (Dual) 20V 500 mOhm @ 830mA,4.5V 1V @ 250μA 3.1nC @ 4.5V 135pF @ 10V
FDY1002PZ
ON Semiconductor
4,343
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 0.83A SC89-6
Cut Tape (CT) PowerTrench SOT-563,SOT-666 SC-89-6 Surface Mount 446mW 2 P-Channel (Dual) 20V 500 mOhm @ 830mA,4.5V 1V @ 250μA 3.1nC @ 4.5V 135pF @ 10V
FDY1002PZ
ON Semiconductor
4,343
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 0.83A SC89-6
- PowerTrench SOT-563,SOT-666 SC-89-6 Surface Mount 446mW 2 P-Channel (Dual) 20V 500 mOhm @ 830mA,4.5V 1V @ 250μA 3.1nC @ 4.5V 135pF @ 10V
VQ1001P
Vishay Siliconix
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 4N-CH 30V 0.83A 14DIP
Tube - - 14-DIP Through Hole 2W 4 N-Channel 30V 1.75 Ohm @ 200mA,5V 2.5V @ 1mA - 110pF @ 15V
VQ1001P-2
Vishay Siliconix
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 4N-CH 30V 0.83A 14DIP
Tube - - 14-DIP Through Hole 2W 4 N-Channel 30V 1.75 Ohm @ 200mA,5V 2.5V @ 1mA - 110pF @ 15V
VQ1001P-E3
Vishay Siliconix
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 4N-CH 30V 0.83A 14DIP
Tube - - 14-DIP Through Hole 2W 4 N-Channel 30V 1.75 Ohm @ 200mA,5V 2.5V @ 1mA - 110pF @ 15V