Supplier Device Package:
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 9 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Supplier Device Package FET Type Current - Continuous Drain (Id) @ 25°C Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
DMG6602SVT-7
Diodes Incorporated
51,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V TSOT23-6
Tape & Reel (TR) TSOT-23-6 N and P-Channel 3.4A,2.8A 2.3V @ 250μA 13nC @ 10V 400pF @ 15V
DMG6602SVT-7
Diodes Incorporated
53,816
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V TSOT23-6
Cut Tape (CT) TSOT-23-6 N and P-Channel 3.4A,2.8A 2.3V @ 250μA 13nC @ 10V 400pF @ 15V
DMG6602SVT-7
Diodes Incorporated
53,816
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V TSOT23-6
- TSOT-23-6 N and P-Channel 3.4A,2.8A 2.3V @ 250μA 13nC @ 10V 400pF @ 15V
DMG6602SVTQ-7
Diodes Incorporated
9,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V TSOT26
Tape & Reel (TR) TSOT-26 N and P-Channel 3.4A,2.8A 2.3V @ 250μA 13nC @ 10V 400pF @ 15V
DMG6602SVTQ-7
Diodes Incorporated
9,099
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V TSOT26
Cut Tape (CT) TSOT-26 N and P-Channel 3.4A,2.8A 2.3V @ 250μA 13nC @ 10V 400pF @ 15V
DMG6602SVTQ-7
Diodes Incorporated
9,099
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V TSOT26
- TSOT-26 N and P-Channel 3.4A,2.8A 2.3V @ 250μA 13nC @ 10V 400pF @ 15V
DMN3135LVT-7
Diodes Incorporated
6,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 3.5A TSOT26
Tape & Reel (TR) TSOT-26 2 N-Channel (Dual) 3.5A 2.2V @ 250μA 4.1nC @ 4.5V 305pF @ 15V
DMN3135LVT-7
Diodes Incorporated
8,894
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 3.5A TSOT26
Cut Tape (CT) TSOT-26 2 N-Channel (Dual) 3.5A 2.2V @ 250μA 4.1nC @ 4.5V 305pF @ 15V
DMN3135LVT-7
Diodes Incorporated
8,894
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 3.5A TSOT26
- TSOT-26 2 N-Channel (Dual) 3.5A 2.2V @ 250μA 4.1nC @ 4.5V 305pF @ 15V