Operating Temperature:
Supplier Device Package:
Power - Max:
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 6 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Operating Temperature Package / Case Supplier Device Package Power - Max FET Type FET Feature Current - Continuous Drain (Id) @ 25°C Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
DMG4800LSD-13
Diodes Incorporated
42,500
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 7.5A 8SO
Tape & Reel (TR) -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOP 1.17W 2 N-Channel (Dual) Logic Level Gate 7.5A 1.6V @ 250μA 8.56nC @ 5V 798pF @ 10V
DMG4800LSD-13
Diodes Incorporated
43,801
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 7.5A 8SO
Cut Tape (CT) -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOP 1.17W 2 N-Channel (Dual) Logic Level Gate 7.5A 1.6V @ 250μA 8.56nC @ 5V 798pF @ 10V
DMG4800LSD-13
Diodes Incorporated
43,801
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 7.5A 8SO
- -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOP 1.17W 2 N-Channel (Dual) Logic Level Gate 7.5A 1.6V @ 250μA 8.56nC @ 5V 798pF @ 10V
QH8MA4TCR
ROHM Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V TSMT8
Tape & Reel (TR) 150°C (TJ) 8-SMD,Flat Lead TSMT8 1.5W N and P-Channel Standard 9A,8A 2.5V @ 1mA 15.5nC @ 10V 640pF @ 15V
QH8MA4TCR
ROHM Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V TSMT8
Cut Tape (CT) 150°C (TJ) 8-SMD,Flat Lead TSMT8 1.5W N and P-Channel Standard 9A,8A 2.5V @ 1mA 15.5nC @ 10V 640pF @ 15V
QH8MA4TCR
ROHM Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V TSMT8
- 150°C (TJ) 8-SMD,Flat Lead TSMT8 1.5W N and P-Channel Standard 9A,8A 2.5V @ 1mA 15.5nC @ 10V 640pF @ 15V