Supplier Device Package:
Power - Max:
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 5 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Supplier Device Package Power - Max FET Type FET Feature Current - Continuous Drain (Id) @ 25°C Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
SI4936BDY-T1-E3
Vishay Siliconix
20,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 6.9A 8-SOIC
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) 8-SO 2.8W 2 N-Channel (Dual) Logic Level Gate 6.9A 3V @ 250μA 15nC @ 10V 530pF @ 15V
SI4936BDY-T1-E3
Vishay Siliconix
20,137
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 6.9A 8-SOIC
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) 8-SO 2.8W 2 N-Channel (Dual) Logic Level Gate 6.9A 3V @ 250μA 15nC @ 10V 530pF @ 15V
SI4936BDY-T1-E3
Vishay Siliconix
20,137
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 6.9A 8-SOIC
- TrenchFET -55°C ~ 150°C (TJ) 8-SO 2.8W 2 N-Channel (Dual) Logic Level Gate 6.9A 3V @ 250μA 15nC @ 10V 530pF @ 15V
SI4936BDY-T1-GE3
Vishay Siliconix
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 6.9A 8-SOIC
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) 8-SO 2.8W 2 N-Channel (Dual) Logic Level Gate 6.9A 3V @ 250μA 15nC @ 10V 530pF @ 15V
SQ4949EY-T1_GE3
Vishay Siliconix
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2 P-CH 30V 7.5A 8SOIC
Tape & Reel (TR) Automotive,AEC-Q101,TrenchFET -55°C ~ 175°C (TJ) 8-SOIC 3.3W 2 P-Channel (Dual) Standard 7.5A (Tc) 2.5V @ 250μA 30nC @ 10V 1020pF @ 25V