Power - Max:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 6 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Input Capacitance (Ciss) (Max) @ Vds
FDMQ8403
ON Semiconductor
3,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 4N-CH 100V 3.1A 12-MLP
Tape & Reel (TR) 1.9W 4 N-Channel (H-Bridge) Standard 100V 3.1A 215pF @ 15V
FDMQ8403
ON Semiconductor
3,817
3 days
-
MOQ: 1  MPQ: 1
MOSFET 4N-CH 100V 3.1A 12-MLP
Cut Tape (CT) 1.9W 4 N-Channel (H-Bridge) Standard 100V 3.1A 215pF @ 15V
FDMQ8403
ON Semiconductor
3,817
3 days
-
MOQ: 1  MPQ: 1
MOSFET 4N-CH 100V 3.1A 12-MLP
- 1.9W 4 N-Channel (H-Bridge) Standard 100V 3.1A 215pF @ 15V
FDMQ8203
ON Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N/2P-CH 100V/80V 12-MLP
Tape & Reel (TR) 2.5W 2 N and 2 P-Channel (H-Bridge) Logic Level Gate 100V,80V 3.4A,2.6A 210pF @ 50V
FDMQ8203
ON Semiconductor
644
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N/2P-CH 100V/80V 12-MLP
Cut Tape (CT) 2.5W 2 N and 2 P-Channel (H-Bridge) Logic Level Gate 100V,80V 3.4A,2.6A 210pF @ 50V
FDMQ8203
ON Semiconductor
644
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N/2P-CH 100V/80V 12-MLP
- 2.5W 2 N and 2 P-Channel (H-Bridge) Logic Level Gate 100V,80V 3.4A,2.6A 210pF @ 50V