- Packaging:
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- FET Feature:
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- Drain to Source Voltage (Vdss):
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- Current - Continuous Drain (Id) @ 25°C:
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- Input Capacitance (Ciss) (Max) @ Vds:
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- Selected conditions:
Discover 6 products
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | ||
ON Semiconductor |
3,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 4N-CH 100V 3.1A 12-MLP
|
Tape & Reel (TR) | 1.9W | 4 N-Channel (H-Bridge) | Standard | 100V | 3.1A | 215pF @ 15V | ||||
ON Semiconductor |
3,817
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 4N-CH 100V 3.1A 12-MLP
|
Cut Tape (CT) | 1.9W | 4 N-Channel (H-Bridge) | Standard | 100V | 3.1A | 215pF @ 15V | ||||
ON Semiconductor |
3,817
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 4N-CH 100V 3.1A 12-MLP
|
- | 1.9W | 4 N-Channel (H-Bridge) | Standard | 100V | 3.1A | 215pF @ 15V | ||||
ON Semiconductor |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N/2P-CH 100V/80V 12-MLP
|
Tape & Reel (TR) | 2.5W | 2 N and 2 P-Channel (H-Bridge) | Logic Level Gate | 100V,80V | 3.4A,2.6A | 210pF @ 50V | ||||
ON Semiconductor |
644
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N/2P-CH 100V/80V 12-MLP
|
Cut Tape (CT) | 2.5W | 2 N and 2 P-Channel (H-Bridge) | Logic Level Gate | 100V,80V | 3.4A,2.6A | 210pF @ 50V | ||||
ON Semiconductor |
644
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N/2P-CH 100V/80V 12-MLP
|
- | 2.5W | 2 N and 2 P-Channel (H-Bridge) | Logic Level Gate | 100V,80V | 3.4A,2.6A | 210pF @ 50V |