Power - Max:
Current - Continuous Drain (Id) @ 25°C:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 9 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Power - Max Current - Continuous Drain (Id) @ 25°C Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
SI1023X-T1-GE3
Vishay Siliconix
9,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 0.37A SC89-6
Tape & Reel (TR) TrenchFET 250mW 370mA 450mV @ 250μA (Min) 1.5nC @ 4.5V -
SI1023X-T1-GE3
Vishay Siliconix
11,369
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 0.37A SC89-6
Cut Tape (CT) TrenchFET 250mW 370mA 450mV @ 250μA (Min) 1.5nC @ 4.5V -
SI1023X-T1-GE3
Vishay Siliconix
11,369
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 0.37A SC89-6
- TrenchFET 250mW 370mA 450mV @ 250μA (Min) 1.5nC @ 4.5V -
FDY2000PZ
ON Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 0.35A SOT-563F
Tape & Reel (TR) PowerTrench 446mW 350mA 1.5V @ 250μA 1.4nC @ 4.5V 100pF @ 10V
FDY2000PZ
ON Semiconductor
1,803
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 0.35A SOT-563F
Cut Tape (CT) PowerTrench 446mW 350mA 1.5V @ 250μA 1.4nC @ 4.5V 100pF @ 10V
FDY2000PZ
ON Semiconductor
1,803
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 0.35A SOT-563F
- PowerTrench 446mW 350mA 1.5V @ 250μA 1.4nC @ 4.5V 100pF @ 10V
SI1023X-T1-E3
Vishay Siliconix
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 0.37A SOT563F
Tape & Reel (TR) TrenchFET 250mW 370mA 450mV @ 250μA (Min) 1.5nC @ 4.5V -
SI1023X-T1-E3
Vishay Siliconix
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 0.37A SOT563F
Cut Tape (CT) TrenchFET 250mW 370mA 450mV @ 250μA (Min) 1.5nC @ 4.5V -
SI1023X-T1-E3
Vishay Siliconix
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 0.37A SOT563F
- TrenchFET 250mW 370mA 450mV @ 250μA (Min) 1.5nC @ 4.5V -