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Discover 23 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Nexperia USA Inc. |
10,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 8SOIC
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Tape & Reel (TR) | TrenchMOS | -65°C ~ 150°C (TJ) | 8-SO | 2 N-Channel (Dual) | 30V | - | 2.8V @ 1mA | 6nC @ 10V | 250pF @ 20V | ||
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Nexperia USA Inc. |
11,265
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 8SOIC
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Cut Tape (CT) | TrenchMOS | -65°C ~ 150°C (TJ) | 8-SO | 2 N-Channel (Dual) | 30V | - | 2.8V @ 1mA | 6nC @ 10V | 250pF @ 20V | ||
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Nexperia USA Inc. |
11,265
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3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 8SOIC
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- | TrenchMOS | -65°C ~ 150°C (TJ) | 8-SO | 2 N-Channel (Dual) | 30V | - | 2.8V @ 1mA | 6nC @ 10V | 250pF @ 20V | ||
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Infineon Technologies |
8,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 30V 8-SOIC
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Tape & Reel (TR) | HEXFET | -55°C ~ 150°C (TJ) | 8-SO | N and P-Channel | 30V | 3.5A，2.3A | 1V @ 250μA | 14nC @ 10V | 190pF @ 15V | ||
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Infineon Technologies |
10,888
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 30V 8-SOIC
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Cut Tape (CT) | HEXFET | -55°C ~ 150°C (TJ) | 8-SO | N and P-Channel | 30V | 3.5A，2.3A | 1V @ 250μA | 14nC @ 10V | 190pF @ 15V | ||
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Infineon Technologies |
10,888
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 30V 8-SOIC
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- | HEXFET | -55°C ~ 150°C (TJ) | 8-SO | N and P-Channel | 30V | 3.5A，2.3A | 1V @ 250μA | 14nC @ 10V | 190pF @ 15V | ||
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Nexperia USA Inc. |
920
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 30V 8SOIC
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Cut Tape (CT) | - | 150°C (TJ) | 8-SO | N and P-Channel | 30V | 3.5A，2.3A | 2.8V @ 1mA | 30nC @ 10V | 250pF @ 20V | ||
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Nexperia USA Inc. |
920
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 30V 8SOIC
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- | - | 150°C (TJ) | 8-SO | N and P-Channel | 30V | 3.5A，2.3A | 2.8V @ 1mA | 30nC @ 10V | 250pF @ 20V | ||
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Nexperia USA Inc. |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 30V 8SOIC
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Tape & Reel (TR) | - | 150°C (TJ) | 8-SO | N and P-Channel | 30V | 3.5A，2.3A | 2.8V @ 1mA | 30nC @ 10V | 250pF @ 20V | ||
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Infineon Technologies |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 3.5A 8-SOIC
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Tape & Reel (TR) | HEXFET | -55°C ~ 150°C (TJ) | 8-SO | 2 N-Channel (Dual) | 30V | 3.5A | 1V @ 250μA | 14nC @ 10V | 190pF @ 15V | ||
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Infineon Technologies |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 30V 3.5A/2.3A 8SO
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Tape & Reel (TR) | HEXFET | -55°C ~ 150°C (TJ) | 8-SO | N and P-Channel | 30V | 3.5A，2.3A | 3V @ 250μA | 14nC @ 10V | 190pF @ 15V | ||
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Infineon Technologies |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 30V 8-SOIC
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Tube | HEXFET | -55°C ~ 150°C (TJ) | 8-SO | N and P-Channel | 30V | 3.5A，2.3A | 1V @ 250μA | 14nC @ 10V | 190pF @ 15V | ||
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Infineon Technologies |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 3.5A 8-SOIC
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Tube | HEXFET | -55°C ~ 150°C (TJ) | 8-SO | 2 N-Channel (Dual) | 30V | 3.5A | 1V @ 250μA | 14nC @ 10V | 190pF @ 15V | ||
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Infineon Technologies |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 30V 8-SOIC
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Tape & Reel (TR) | HEXFET | -55°C ~ 150°C (TJ) | 8-SO | N and P-Channel | 30V | 3.5A，2.3A | 1V @ 250μA | 14nC @ 10V | 190pF @ 15V | ||
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Infineon Technologies |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 3.5A 8-SOIC
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Tape & Reel (TR) | HEXFET | -55°C ~ 150°C (TJ) | 8-SO | 2 N-Channel (Dual) | 30V | 3.5A | 1V @ 250μA | 14nC @ 10V | 190pF @ 15V | ||
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Infineon Technologies |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 30V 8-SOIC
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Tube | HEXFET | -55°C ~ 150°C (TJ) | 8-SO | N and P-Channel | 30V | 3.5A，2.3A | 1V @ 250μA | 14nC @ 10V | 190pF @ 15V | ||
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Infineon Technologies |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 3.5A 8-SOIC
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Tube | HEXFET | -55°C ~ 150°C (TJ) | 8-SO | 2 N-Channel (Dual) | 30V | 3.5A | 1V @ 250μA | 14nC @ 10V | 190pF @ 15V | ||
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Infineon Technologies |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 30V 8-SOIC
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Cut Tape (CT) | HEXFET | -55°C ~ 150°C (TJ) | 8-SO | N and P-Channel | 30V | 3.5A，2.3A | 1V @ 250μA | 14nC @ 10V | 190pF @ 15V | ||
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Infineon Technologies |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 30V 8-SOIC
|
- | HEXFET | -55°C ~ 150°C (TJ) | 8-SO | N and P-Channel | 30V | 3.5A，2.3A | 1V @ 250μA | 14nC @ 10V | 190pF @ 15V | ||
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Infineon Technologies |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 30V 3.5A/2.3A 8SO
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Tube | HEXFET | -55°C ~ 150°C (TJ) | 8-SO | N and P-Channel | 30V | 3.5A，2.3A | 3V @ 250μA | 14nC @ 10V | 190pF @ 15V |
