Power - Max:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 6 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
DMP6050SSD-13
Diodes Incorporated
5,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 60V 4.8A 8-SO
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 1.2W Standard 60V 4.8A 24nC @ 10V 1293pF @ 30V
DMP6050SSD-13
Diodes Incorporated
8,089
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 60V 4.8A 8-SO
Cut Tape (CT) - -55°C ~ 150°C (TJ) 1.2W Standard 60V 4.8A 24nC @ 10V 1293pF @ 30V
DMP6050SSD-13
Diodes Incorporated
8,089
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 60V 4.8A 8-SO
- - -55°C ~ 150°C (TJ) 1.2W Standard 60V 4.8A 24nC @ 10V 1293pF @ 30V
FDS4953
ON Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 30V 5A 8SOIC
Tape & Reel (TR) PowerTrench -55°C ~ 175°C (TJ) 900mW Logic Level Gate 30V 5A 9nC @ 5V 528pF @ 15V
FDS4953
ON Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 30V 5A 8SOIC
Cut Tape (CT) PowerTrench -55°C ~ 175°C (TJ) 900mW Logic Level Gate 30V 5A 9nC @ 5V 528pF @ 15V
FDS4953
ON Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 30V 5A 8SOIC
- PowerTrench -55°C ~ 175°C (TJ) 900mW Logic Level Gate 30V 5A 9nC @ 5V 528pF @ 15V