Discover 25 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Package / Case Supplier Device Package Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
DMN3024LSD-13
Diodes Incorporated
2,500
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 6.8A 8SO
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1.8W 2 N-Channel (Dual) Logic Level Gate 30V 6.8A 3V @ 250μA 12.9nC @ 10V 608pF @ 15V
DMN3024LSD-13
Diodes Incorporated
3,825
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 6.8A 8SO
Cut Tape (CT) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1.8W 2 N-Channel (Dual) Logic Level Gate 30V 6.8A 3V @ 250μA 12.9nC @ 10V 608pF @ 15V
DMN3024LSD-13
Diodes Incorporated
3,825
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 6.8A 8SO
- - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1.8W 2 N-Channel (Dual) Logic Level Gate 30V 6.8A 3V @ 250μA 12.9nC @ 10V 608pF @ 15V
ZXMN3F31DN8TA
Diodes Incorporated
3,500
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.7A 8SOIC
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1.8W 2 N-Channel (Dual) Logic Level Gate 30V 5.7A 3V @ 250μA 12.9nC @ 10V 608pF @ 15V
ZXMN3F31DN8TA
Diodes Incorporated
3,500
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.7A 8SOIC
Cut Tape (CT) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1.8W 2 N-Channel (Dual) Logic Level Gate 30V 5.7A 3V @ 250μA 12.9nC @ 10V 608pF @ 15V
ZXMN3F31DN8TA
Diodes Incorporated
3,500
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.7A 8SOIC
- - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1.8W 2 N-Channel (Dual) Logic Level Gate 30V 5.7A 3V @ 250μA 12.9nC @ 10V 608pF @ 15V
SP8K3TB
ROHM Semiconductor
7,500
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 7A 8-SOIC
Tape & Reel (TR) - 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOP 2W 2 N-Channel (Dual) Logic Level Gate 30V 7A 2.5V @ 1mA 11.8nC @ 5V 600pF @ 10V
SP8K3TB
ROHM Semiconductor
1,990
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 7A 8-SOIC
Cut Tape (CT) - 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOP 2W 2 N-Channel (Dual) Logic Level Gate 30V 7A 2.5V @ 1mA 11.8nC @ 5V 600pF @ 10V
SP8K3TB
ROHM Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 7A 8-SOIC
- - 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOP 2W 2 N-Channel (Dual) Logic Level Gate 30V 7A 2.5V @ 1mA 11.8nC @ 5V 600pF @ 10V
ZXMN3F31DN8TA
Diodes Incorporated
1,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.7A 8SOIC
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOP 1.8W 2 N-Channel (Dual) Logic Level Gate 30V 5.7A 3V @ 250μA 12.9nC @ 10V 608pF @ 15V
ZXMN3F31DN8TA
Diodes Incorporated
1,068
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.7A 8SOIC
Cut Tape (CT) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1.8W 2 N-Channel (Dual) Logic Level Gate 30V 5.7A 3V @ 250μA 12.9nC @ 10V 608pF @ 15V
ZXMN3F31DN8TA
Diodes Incorporated
1,068
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.7A 8SOIC
- - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1.8W 2 N-Channel (Dual) Logic Level Gate 30V 5.7A 3V @ 250μA 12.9nC @ 10V 608pF @ 15V
SH8K3TB1
ROHM Semiconductor
2,088
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 7A SOP8
Cut Tape (CT) - 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOP 2W 2 N-Channel (Dual) Logic Level Gate 30V 7A 2.5V @ 1mA 11.8nC @ 5V 600pF @ 10V
SH8K3TB1
ROHM Semiconductor
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 7A SOP8
- - 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOP 2W 2 N-Channel (Dual) Logic Level Gate 30V 7A 2.5V @ 1mA 11.8nC @ 5V 600pF @ 10V
ZXMC3F31DN8TA
Diodes Incorporated
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 6.8A/4.9A 8SO
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1.8W N and P-Channel Logic Level Gate,4.5V Drive 30V 6.8A,4.9A 3V @ 250μA 12.9nC @ 10V 608pF @ 15V
ZXMC3F31DN8TA
Diodes Incorporated
400
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 6.8A/4.9A 8SO
Cut Tape (CT) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1.8W N and P-Channel Logic Level Gate,4.5V Drive 30V 6.8A,4.9A 3V @ 250μA 12.9nC @ 10V 608pF @ 15V
ZXMC3F31DN8TA
Diodes Incorporated
400
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 6.8A/4.9A 8SO
- - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1.8W N and P-Channel Logic Level Gate,4.5V Drive 30V 6.8A,4.9A 3V @ 250μA 12.9nC @ 10V 608pF @ 15V
FDS8960C
ON Semiconductor
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 35V 7A/5A 8SOIC
Tape & Reel (TR) PowerTrench -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 900mW N and P-Channel Logic Level Gate 35V 7A,5A 3V @ 250μA 7.7nC @ 5V 570pF @ 15V
FDS8960C
ON Semiconductor
1
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 35V 7A/5A 8SOIC
Cut Tape (CT) PowerTrench -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 900mW N and P-Channel Logic Level Gate 35V 7A,5A 3V @ 250μA 7.7nC @ 5V 570pF @ 15V
FDS8960C
ON Semiconductor
1
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 35V 7A/5A 8SOIC
- PowerTrench -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 900mW N and P-Channel Logic Level Gate 35V 7A,5A 3V @ 250μA 7.7nC @ 5V 570pF @ 15V