- Manufacturer：
-
- Packaging：
-
- Series：
-
- FET Type：
-
- FET Feature：
-
- Current - Continuous Drain (Id) @ 25°C：
-
- Vgs(th) (Max) @ Id：
-
- Gate Charge (Qg) (Max) @ Vgs：
-
- Input Capacitance (Ciss) (Max) @ Vds：
-
- Selected conditions:
Discover 11 products
 |
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Supplier Device Package | Power - Max | FET Type | FET Feature | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Supplier Device Package | Power - Max | FET Type | FET Feature | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|
|
|
Taiwan Semiconductor Corporation |
15,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2 N-CH 30V 5.9A 8SOP
|
Tape & Reel (TR) | - | 8-SOP | 3W | 2 N-Channel (Dual) | Standard | 5.9A (Ta) | 3V @ 250μA | 13nC @ 10V | 610pF @ 15V | ||
|
|
|
Taiwan Semiconductor Corporation |
15,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2 N-CH 30V 5.9A 8SOP
|
Cut Tape (CT) | - | 8-SOP | 3W | 2 N-Channel (Dual) | Standard | 5.9A (Ta) | 3V @ 250μA | 13nC @ 10V | 610pF @ 15V | ||
|
|
|
Taiwan Semiconductor Corporation |
15,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2 N-CH 30V 5.9A 8SOP
|
- | - | 8-SOP | 3W | 2 N-Channel (Dual) | Standard | 5.9A (Ta) | 3V @ 250μA | 13nC @ 10V | 610pF @ 15V | ||
|
|
|
Vishay Siliconix |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 4.4A 8-SOIC
|
Tape & Reel (TR) | TrenchFET | 8-SO | 1.1W | 2 N-Channel (Dual) | Logic Level Gate | 4.4A | 3V @ 250μA | 20nC @ 10V | - | ||
|
|
|
Vishay Siliconix |
3,370
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 4.4A 8-SOIC
|
Cut Tape (CT) | TrenchFET | 8-SO | 1.1W | 2 N-Channel (Dual) | Logic Level Gate | 4.4A | 3V @ 250μA | 20nC @ 10V | - | ||
|
|
|
Vishay Siliconix |
3,420
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 4.4A 8-SOIC
|
- | TrenchFET | 8-SO | 1.1W | 2 N-Channel (Dual) | Logic Level Gate | 4.4A | 3V @ 250μA | 20nC @ 10V | - | ||
|
|
|
Vishay Siliconix |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 4.4A 8-SOIC
|
Tape & Reel (TR) | TrenchFET | 8-SO | 1.1W | 2 N-Channel (Dual) | Logic Level Gate | 4.4A | 3V @ 250μA | 20nC @ 10V | - | ||
|
|
|
Vishay Siliconix |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 30V 4.4A 8-SOIC
|
Tape & Reel (TR) | TrenchFET | 8-SO | 1.1W | N and P-Channel | Logic Level Gate | 4.4A，3.7A | 1V @ 250μA (Min) | 20nC @ 10V | - | ||
|
|
|
Vishay Siliconix |
29
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 30V 4.4A 8-SOIC
|
Cut Tape (CT) | TrenchFET | 8-SO | 1.1W | N and P-Channel | Logic Level Gate | 4.4A，3.7A | 1V @ 250μA (Min) | 20nC @ 10V | - | ||
|
|
|
Vishay Siliconix |
29
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 30V 4.4A 8-SOIC
|
- | TrenchFET | 8-SO | 1.1W | N and P-Channel | Logic Level Gate | 4.4A，3.7A | 1V @ 250μA (Min) | 20nC @ 10V | - | ||
|
|
|
Vishay Siliconix |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 30V 4.4A 8-SOIC
|
Tape & Reel (TR) | TrenchFET | 8-SO | 1.1W | N and P-Channel | Logic Level Gate | 4.4A，3.7A | 1V @ 250μA (Min) | 20nC @ 10V | - |
