Discover 8 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Package / Case Supplier Device Package Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
TSM200N03DPQ33 RGG
Taiwan Semiconductor Corporation
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2 N-CH 30V 20A 8PDFN
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 8-PowerWDFN 8-PDFN (3x3) 20W 2 N-Channel (Dual) Standard 30V 20A (Tc) 2.5V @ 250μA 4nC @ 4.5V 345pF @ 25V
TSM200N03DPQ33 RGG
Taiwan Semiconductor Corporation
4,980
3 days
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MOQ: 1  MPQ: 1
MOSFET 2 N-CH 30V 20A 8PDFN
Cut Tape (CT) - -55°C ~ 150°C (TJ) 8-PowerWDFN 8-PDFN (3x3) 20W 2 N-Channel (Dual) Standard 30V 20A (Tc) 2.5V @ 250μA 4nC @ 4.5V 345pF @ 25V
TSM200N03DPQ33 RGG
Taiwan Semiconductor Corporation
4,980
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2 N-CH 30V 20A 8PDFN
- - -55°C ~ 150°C (TJ) 8-PowerWDFN 8-PDFN (3x3) 20W 2 N-Channel (Dual) Standard 30V 20A (Tc) 2.5V @ 250μA 4nC @ 4.5V 345pF @ 25V
SI4288DY-T1-GE3
Vishay Siliconix
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 40V 9.2A 8SO
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 3.1W 2 N-Channel (Dual) Logic Level Gate 40V 9.2A 2.5V @ 250μA 15nC @ 10V 580pF @ 20V
SI4288DY-T1-GE3
Vishay Siliconix
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 40V 9.2A 8SO
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 3.1W 2 N-Channel (Dual) Logic Level Gate 40V 9.2A 2.5V @ 250μA 15nC @ 10V 580pF @ 20V
SI4288DY-T1-GE3
Vishay Siliconix
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 40V 9.2A 8SO
- TrenchFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 3.1W 2 N-Channel (Dual) Logic Level Gate 40V 9.2A 2.5V @ 250μA 15nC @ 10V 580pF @ 20V
RJM0603JSC-00#12
Renesas Electronics America
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 3N/3P-CH 60V 20A HSOP
Tray Automotive,AEC-Q101 175°C 20-SOIC (0.433",11.00mm Width) Exposed Pad 20-HSOP 54W 3 N and 3 P-Channel (3-Phase Bridge) Logic Level Gate,4.5V Drive 60V 20A 2.5V @ 1mA 43nC @ 10V 2600pF @ 10V
RJM0603JSC-00#13
Renesas Electronics America
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 3N/3P-CH 60V 20A HSOP
- Automotive,AEC-Q101 175°C 20-SOIC (0.433",11.00mm Width) Exposed Pad 20-HSOP 54W 3 N and 3 P-Channel (3-Phase Bridge) Logic Level Gate,4.5V Drive 60V 20A 2.5V @ 1mA 43nC @ 10V 2600pF @ 10V