Supplier Device Package:
Power - Max:
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Discover 10 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Supplier Device Package Power - Max FET Type Current - Continuous Drain (Id) @ 25°C Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs
SI4532ADY-T1-GE3
Vishay Siliconix
2,500
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 3.7A 8-SOIC
Tape & Reel (TR) 8-SO 1.13W,1.2W N and P-Channel 3.7A,3A 1V @ 250μA 16nC @ 10V
SI4532ADY-T1-GE3
Vishay Siliconix
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 3.7A 8-SOIC
Cut Tape (CT) - 1.13W,1.2W N and P-Channel 3.7A,3A 1V @ 250μA 16nC @ 10V
SI4532ADY-T1-GE3
Vishay Siliconix
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 3.7A 8-SOIC
- - 1.13W,1.2W N and P-Channel 3.7A,3A 1V @ 250μA 16nC @ 10V
SI4532ADY-T1-E3
Vishay Siliconix
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 3.7A 8-SOIC
Tape & Reel (TR) 8-SO 1.13W,1.2W N and P-Channel 3.7A,3A 1V @ 250μA (Min) 16nC @ 10V
SI4532ADY-T1-E3
Vishay Siliconix
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 3.7A 8-SOIC
Cut Tape (CT) 8-SO 1.13W,1.2W N and P-Channel 3.7A,3A 1V @ 250μA (Min) 16nC @ 10V
SI4532ADY-T1-E3
Vishay Siliconix
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 3.7A 8-SOIC
- 8-SO 1.13W,1.2W N and P-Channel 3.7A,3A 1V @ 250μA (Min) 16nC @ 10V
SI4953ADY-T1-E3
Vishay Siliconix
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 30V 3.7A 8-SOIC
Cut Tape (CT) 8-SO 1.1W 2 P-Channel (Dual) 3.7A 1V @ 250μA (Min) 25nC @ 10V
SI4953ADY-T1-E3
Vishay Siliconix
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 30V 3.7A 8-SOIC
- 8-SO 1.1W 2 P-Channel (Dual) 3.7A 1V @ 250μA (Min) 25nC @ 10V
SI4953ADY-T1-GE3
Vishay Siliconix
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 30V 3.7A 8-SOIC
Cut Tape (CT) 8-SO 1.1W 2 P-Channel (Dual) 3.7A 1V @ 250μA (Min) 25nC @ 10V
SI4953ADY-T1-GE3
Vishay Siliconix
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 30V 3.7A 8-SOIC
- 8-SO 1.1W 2 P-Channel (Dual) 3.7A 1V @ 250μA (Min) 25nC @ 10V