Operating Temperature:
Supplier Device Package:
Power - Max:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 4 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Operating Temperature Package / Case Supplier Device Package Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
PMDPB58UPE,115
Nexperia USA Inc.
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 3.6A HUSON6
Tape & Reel (TR) -55°C ~ 150°C (TJ) 6-UDFN Exposed Pad DFN2020-6 515mW Logic Level Gate 20V 3.6A 950mV @ 250μA 9.5nC @ 4.5V 804pF @ 10V
PMDPB58UPE,115
Nexperia USA Inc.
2,344
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 3.6A HUSON6
Cut Tape (CT) -55°C ~ 150°C (TJ) 6-UDFN Exposed Pad DFN2020-6 515mW Logic Level Gate 20V 3.6A 950mV @ 250μA 9.5nC @ 4.5V 804pF @ 10V
PMDPB58UPE,115
Nexperia USA Inc.
2,344
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 3.6A HUSON6
- -55°C ~ 150°C (TJ) 6-UDFN Exposed Pad DFN2020-6 515mW Logic Level Gate 20V 3.6A 950mV @ 250μA 9.5nC @ 4.5V 804pF @ 10V
UPA2672T1R-E2-AX
Renesas Electronics America
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 12V 4A 6HUSON
Tape & Reel (TR) 150°C (TJ) 6-WDFN Exposed Pad 6-HUSON (2x2) 2.3W Logic Level Gate,1.8V Drive 12V 4A - 5nC @ 4.5V 486pF @ 10V