Supplier Device Package:
Power - Max:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 7 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Package / Case Supplier Device Package Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
DMN3035LWN-7
Diodes Incorporated
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.5A 8VDFN
Tape & Reel (TR) 8-PowerVDFN V-DFN3020-8 770mW 2 N-Channel (Dual) Standard 30V 5.5A 2V @ 250μA 9.9nC @ 10V 399pF @ 15V
DMN3035LWN-7
Diodes Incorporated
1,918
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.5A 8VDFN
Cut Tape (CT) 8-PowerVDFN V-DFN3020-8 770mW 2 N-Channel (Dual) Standard 30V 5.5A 2V @ 250μA 9.9nC @ 10V 399pF @ 15V
DMN3035LWN-7
Diodes Incorporated
1,918
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.5A 8VDFN
- 8-PowerVDFN V-DFN3020-8 770mW 2 N-Channel (Dual) Standard 30V 5.5A 2V @ 250μA 9.9nC @ 10V 399pF @ 15V
NDS8858H
ON Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 8SOIC
Tape & Reel (TR) 8-SOIC (0.154",3.90mm Width) 8-SO 1W N and P-Channel Logic Level Gate 30V 6.3A,4.8A 2.8V @ 250μA 30nC @ 10V 720pF @ 15V
NDS8858H
ON Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 8SOIC
Cut Tape (CT) 8-SOIC (0.154",3.90mm Width) 8-SO 1W N and P-Channel Logic Level Gate 30V 6.3A,4.8A 2.8V @ 250μA 30nC @ 10V 720pF @ 15V
NDS8858H
ON Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 8SOIC
- 8-SOIC (0.154",3.90mm Width) 8-SO 1W N and P-Channel Logic Level Gate 30V 6.3A,4.8A 2.8V @ 250μA 30nC @ 10V 720pF @ 15V
DMN3035LWN-13
Diodes Incorporated
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2 N-CH 5.5A VDFN3020-8
Tape & Reel (TR) 8-PowerVDFN V-DFN3020-8 - 2 N-Channel Standard - 5.5A (Ta) 2V @ 250μA 4.5nC @ 4.5V 399pF @ 15V