Current - Continuous Drain (Id) @ 25°C:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 6 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging FET Type FET Feature Current - Continuous Drain (Id) @ 25°C Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
FDC6305N
ON Semiconductor
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 2.7A SSOT6
Tape & Reel (TR) 2 N-Channel (Dual) Standard 2.7A 5nC @ 4.5V 310pF @ 10V
FDC6305N
ON Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 2.7A SSOT6
Cut Tape (CT) 2 N-Channel (Dual) Standard 2.7A 5nC @ 4.5V 310pF @ 10V
FDC6305N
ON Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 2.7A SSOT6
- 2 N-Channel (Dual) Standard 2.7A 5nC @ 4.5V 310pF @ 10V
FDC6327C
ON Semiconductor
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V SSOT-6
Tape & Reel (TR) N and P-Channel Logic Level Gate 2.7A,1.9A 4.5nC @ 4.5V 325pF @ 10V
FDC6327C
ON Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V SSOT-6
Cut Tape (CT) N and P-Channel Logic Level Gate 2.7A,1.9A 4.5nC @ 4.5V 325pF @ 10V
FDC6327C
ON Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V SSOT-6
- N and P-Channel Logic Level Gate 2.7A,1.9A 4.5nC @ 4.5V 325pF @ 10V