Series:
Operating Temperature:
Supplier Device Package:
Power - Max:
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 6 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Package / Case Supplier Device Package Power - Max FET Type Current - Continuous Drain (Id) @ 25°C Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
STS4DNF30L
STMicroelectronics
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 4A 8SOIC
Tape & Reel (TR) STripFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2W 2 N-Channel (Dual) 4A 1V @ 250μA 9nC @ 10V 330pF @ 25V
STS4DNF30L
STMicroelectronics
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 4A 8SOIC
Cut Tape (CT) STripFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2W 2 N-Channel (Dual) 4A 1V @ 250μA 9nC @ 10V 330pF @ 25V
STS4DNF30L
STMicroelectronics
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 4A 8SOIC
- STripFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2W 2 N-Channel (Dual) 4A 1V @ 250μA 9nC @ 10V 330pF @ 25V
TPCF8402(TE85L,F,M
Toshiba Semiconductor and Storage
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 4A/3.2A VS-8
Tape & Reel (TR) - 150°C (TJ) 8-SMD,Flat Lead VS-8 (2.9x1.5) 330mW N and P-Channel 4A,3.2A 2V @ 1mA 10nC @ 10V 470pF @ 10V
TPCF8402(TE85L,F,M
Toshiba Semiconductor and Storage
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 4A/3.2A VS-8
Cut Tape (CT) - 150°C (TJ) 8-SMD,Flat Lead VS-8 (2.9x1.5) 330mW N and P-Channel 4A,3.2A 2V @ 1mA 10nC @ 10V 470pF @ 10V
TPCF8402(TE85L,F,M
Toshiba Semiconductor and Storage
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 4A/3.2A VS-8
- - 150°C (TJ) 8-SMD,Flat Lead VS-8 (2.9x1.5) 330mW N and P-Channel 4A,3.2A 2V @ 1mA 10nC @ 10V 470pF @ 10V