Series:
Power - Max:
Current - Continuous Drain (Id) @ 25°C:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 3 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Power - Max Current - Continuous Drain (Id) @ 25°C Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
SI3911DV-T1-E3
Vishay Siliconix
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 1.8A 6TSOP
Cut Tape (CT) TrenchFET 830mW 1.8A 450mV @ 250μA (Min) 7.5nC @ 4.5V -
SI3911DV-T1-E3
Vishay Siliconix
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 1.8A 6TSOP
- TrenchFET 830mW 1.8A 450mV @ 250μA (Min) 7.5nC @ 4.5V -
NTGD3133PT1G
ON Semiconductor
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 1.6A 6TSOP
Tape & Reel (TR) - 560mW 1.6A 1.4V @ 250μA 5.5nC @ 4.5V 400pF @ 10V