Supplier Device Package:
Power - Max:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 5 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Package / Case Supplier Device Package Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
NTLUD3A50PZTAG
ON Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 2.8A UDFN
Tape & Reel (TR) 6-UDFN Exposed Pad 6-UDFN (2x2) 500mW 2 P-Channel (Dual) Logic Level Gate 20V 2.8A 10.4nC @ 4.5V 920pF @ 15V
NTLUD3A50PZTAG
ON Semiconductor
2,935
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 2.8A UDFN
Cut Tape (CT) 6-UDFN Exposed Pad 6-UDFN (2x2) 500mW 2 P-Channel (Dual) Logic Level Gate 20V 2.8A 10.4nC @ 4.5V 920pF @ 15V
NTLUD3A50PZTAG
ON Semiconductor
2,935
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 2.8A UDFN
- 6-UDFN Exposed Pad 6-UDFN (2x2) 500mW 2 P-Channel (Dual) Logic Level Gate 20V 2.8A 10.4nC @ 4.5V 920pF @ 15V
NTLUD3A50PZTBG
ON Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 2.8A UDFN
Tape & Reel (TR) 6-UDFN Exposed Pad 6-UDFN (2x2) 500mW 2 P-Channel (Dual) Logic Level Gate 20V 2.8A 10.4nC @ 4.5V 920pF @ 15V
NTLJD2105LTBG
ON Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 8V 2.5A 6-WDFN
Tape & Reel (TR) 6-WDFN Exposed Pad 6-WDFN (2x2) 520mW N and P-Channel Standard 8V 2.5A - -