- Operating Temperature：
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- FET Feature：
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- Current - Continuous Drain (Id) @ 25°C：
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- Vgs(th) (Max) @ Id：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Selected conditions:
Discover 2 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Operating Temperature | Supplier Device Package | Power - Max | FET Feature | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Operating Temperature | Supplier Device Package | Power - Max | FET Feature | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Microsemi Corporation |
22
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3 days |
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MOQ: 1 MPQ: 1
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MOSFET 6N-CH 1200V 78A SP6-P
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-40°C ~ 150°C (TJ) | SP6-P | 370W | Standard | 78A | 2.2V @ 3mA (Typ) | 148nC @ 20V | 2850pF @ 1000V | |||
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Microsemi Corporation |
Inquiry
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MOQ: 1 MPQ: 1
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POWER MODULE - SIC
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-40°C ~ 175°C (TJ) | SP6 | 714W | Silicon Carbide (SiC) | 112A (Tc) | 3V @ 3mA | 408nC @ 20V | 7680pF @ 1000V |
