Supplier Device Package:
Power - Max:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 2 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Series Package / Case Supplier Device Package Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
UPA3753GR-E1-AT
Renesas Electronics America
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 5A 8SOP
- 8-PowerWDFN 8-SOP 1.12W 2 N-Channel (Dual) Logic Level Gate 60V 5A - 13.4nC @ 10V 640pF @ 10V
STS5DP3LLH6
STMicroelectronics
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2 P-CHANNEL 30V 5A 8SO
DeepGATE,STripFET H6 8-SOIC (0.154",3.90mm Width) 8-SO 2.7W 2 P-Channel (Dual) Logic Level Gate,4.5V Drive 30V 5A (Ta) 2.5V @ 250μA 6nC @ 4.5V 639pF @ 25V