Series:
Operating Temperature:
Drain to Source Voltage (Vdss):
Discover 47 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Package / Case Supplier Device Package Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
BSS84DW-7-F
Diodes Incorporated
99,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 50V 0.13A SC70-6
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 6-TSSOP,SC-88,SOT-363 SOT-363 300mW 2 P-Channel (Dual) Logic Level Gate 50V 130mA 10 Ohm @ 100mA,5V - 45pF @ 25V
BSS84DW-7-F
Diodes Incorporated
101,426
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 50V 0.13A SC70-6
Cut Tape (CT) - -55°C ~ 150°C (TJ) 6-TSSOP,SC-88,SOT-363 SOT-363 300mW 2 P-Channel (Dual) Logic Level Gate 50V 130mA 10 Ohm @ 100mA,5V - 45pF @ 25V
BSS84DW-7-F
Diodes Incorporated
101,426
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 50V 0.13A SC70-6
- - -55°C ~ 150°C (TJ) 6-TSSOP,SC-88,SOT-363 SOT-363 300mW 2 P-Channel (Dual) Logic Level Gate 50V 130mA 10 Ohm @ 100mA,5V - 45pF @ 25V
PHC2300,118
Nexperia USA Inc.
5,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 300V 8SOIC
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1.6W N and P-Channel Logic Level Gate 300V 340mA,235mA 6 Ohm @ 170mA,10V 6.24nC @ 10V 102pF @ 50V
PHC2300,118
Nexperia USA Inc.
7,512
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 300V 8SOIC
Cut Tape (CT) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1.6W N and P-Channel Logic Level Gate 300V 340mA,235mA 6 Ohm @ 170mA,10V 6.24nC @ 10V 102pF @ 50V
PHC2300,118
Nexperia USA Inc.
7,512
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 300V 8SOIC
- - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1.6W N and P-Channel Logic Level Gate 300V 340mA,235mA 6 Ohm @ 170mA,10V 6.24nC @ 10V 102pF @ 50V
BSS84V-7
Diodes Incorporated
6,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 50V 0.13A SOT-563
Tape & Reel (TR) - -55°C ~ 150°C (TJ) SOT-563,SOT-666 SOT-563 150mW 2 P-Channel (Dual) Logic Level Gate 50V 130mA 10 Ohm @ 100mA,5V - 45pF @ 25V
BSS84V-7
Diodes Incorporated
7,563
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 50V 0.13A SOT-563
Cut Tape (CT) - -55°C ~ 150°C (TJ) SOT-563,SOT-666 SOT-563 150mW 2 P-Channel (Dual) Logic Level Gate 50V 130mA 10 Ohm @ 100mA,5V - 45pF @ 25V
BSS84V-7
Diodes Incorporated
7,563
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 50V 0.13A SOT-563
- - -55°C ~ 150°C (TJ) SOT-563,SOT-666 SOT-563 150mW 2 P-Channel (Dual) Logic Level Gate 50V 130mA 10 Ohm @ 100mA,5V - 45pF @ 25V
DMN61D8LVTQ-7
Diodes Incorporated
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 0.63A TSOT26
Tape & Reel (TR) - -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 TSOT-26 820mW 2 N-Channel (Dual) Logic Level Gate 60V 630mA 1.8 Ohm @ 150mA,5V 0.74nC @ 5V 12.9pF @ 12V
DMN61D8LVTQ-7
Diodes Incorporated
2,907
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 0.63A TSOT26
Cut Tape (CT) - -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 TSOT-26 820mW 2 N-Channel (Dual) Logic Level Gate 60V 630mA 1.8 Ohm @ 150mA,5V 0.74nC @ 5V 12.9pF @ 12V
DMN61D8LVTQ-7
Diodes Incorporated
2,907
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 0.63A TSOT26
- - -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 TSOT-26 820mW 2 N-Channel (Dual) Logic Level Gate 60V 630mA 1.8 Ohm @ 150mA,5V 0.74nC @ 5V 12.9pF @ 12V
US6J2TR
ROHM Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 1A TUMT6
Tape & Reel (TR) - 150°C (TJ) 6-SMD,Flat Leads TUMT6 1W 2 P-Channel (Dual) Logic Level Gate 20V 1A 390 mOhm @ 1A,4.5V 2.1nC @ 4.5V 150pF @ 10V
US6J2TR
ROHM Semiconductor
1,931
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 1A TUMT6
Cut Tape (CT) - 150°C (TJ) 6-SMD,Flat Leads TUMT6 1W 2 P-Channel (Dual) Logic Level Gate 20V 1A 390 mOhm @ 1A,4.5V 2.1nC @ 4.5V 150pF @ 10V
US6J2TR
ROHM Semiconductor
1,931
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 1A TUMT6
- - 150°C (TJ) 6-SMD,Flat Leads TUMT6 1W 2 P-Channel (Dual) Logic Level Gate 20V 1A 390 mOhm @ 1A,4.5V 2.1nC @ 4.5V 150pF @ 10V
DMN61D8LVT-7
Diodes Incorporated
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 0.63A TSOT26
Tape & Reel (TR) - -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 TSOT-26 820mW 2 N-Channel (Dual) Logic Level Gate 60V 630mA 1.8 Ohm @ 150mA,5V 0.74nC @ 5V 12.9pF @ 12V
DMN61D8LVT-7
Diodes Incorporated
455
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 0.63A TSOT26
Cut Tape (CT) - -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 TSOT-26 820mW 2 N-Channel (Dual) Logic Level Gate 60V 630mA 1.8 Ohm @ 150mA,5V 0.74nC @ 5V 12.9pF @ 12V
DMN61D8LVT-7
Diodes Incorporated
455
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 0.63A TSOT26
- - -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 TSOT-26 820mW 2 N-Channel (Dual) Logic Level Gate 60V 630mA 1.8 Ohm @ 150mA,5V 0.74nC @ 5V 12.9pF @ 12V
QS6J1TR
ROHM Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 1.5A TSMT6
Tape & Reel (TR) - 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 TSMT6 (SC-95) 1.25W 2 P-Channel (Dual) Logic Level Gate 20V 1.5A 215 mOhm @ 1.5A,4.5V 3nC @ 4.5V 270pF @ 10V
QS6J1TR
ROHM Semiconductor
74
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 1.5A TSMT6
Cut Tape (CT) - 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 TSMT6 (SC-95) 1.25W 2 P-Channel (Dual) Logic Level Gate 20V 1.5A 215 mOhm @ 1.5A,4.5V 3nC @ 4.5V 270pF @ 10V