FETs, MOSFETs - Arrays - Zui Ai Technology（Taiwan）Company.

Packaging：

Series：

Package / Case：

Supplier Device Package：

Power - Max：

FET Type：

FET Feature：

Drain to Source Voltage (Vdss)：

Current - Continuous Drain (Id) @ 25°C：

Rds On (Max) @ Id，Vgs：

Gate Charge (Qg) (Max) @ Vgs：

Input Capacitance (Ciss) (Max) @ Vds：

Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Package / Case	Supplier Device Package	Power - Max	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id，Vgs	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Package / Case	Supplier Device Package	Power - Max	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id，Vgs	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
	DMG1026UV-7	Diodes Incorporated	54,000	3 days	-	MOSFET 2N-CH 60V 0.41A SOT-563 MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 0.41A SOT-563	Tape & Reel (TR)	-	SOT-563，SOT-666	SOT-563	580mW	2 N-Channel (Dual)	Logic Level Gate	60V	410mA	1.8 Ohm @ 500mA，10V	0.45nC @ 10V	32pF @ 25V
	DMG1026UV-7	Diodes Incorporated	56,032	3 days	-	MOSFET 2N-CH 60V 0.41A SOT-563 MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 0.41A SOT-563	Cut Tape (CT)	-	SOT-563，SOT-666	SOT-563	580mW	2 N-Channel (Dual)	Logic Level Gate	60V	410mA	1.8 Ohm @ 500mA，10V	0.45nC @ 10V	32pF @ 25V
	DMG1026UV-7	Diodes Incorporated	56,032	3 days	-	MOSFET 2N-CH 60V 0.41A SOT-563 MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 0.41A SOT-563	-	-	SOT-563，SOT-666	SOT-563	580mW	2 N-Channel (Dual)	Logic Level Gate	60V	410mA	1.8 Ohm @ 500mA，10V	0.45nC @ 10V	32pF @ 25V
	SI4922BDY-T1-E3	Vishay Siliconix	12,500	3 days	-	MOSFET 2N-CH 30V 8A 8-SOIC MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 8A 8-SOIC	Tape & Reel (TR)	TrenchFET	8-SOIC (0.154"，3.90mm Width)	8-SO	3.1W	2 N-Channel (Dual)	Standard	30V	8A	16 mOhm @ 5A，10V	62nC @ 10V	2070pF @ 15V
	SI4922BDY-T1-E3	Vishay Siliconix	16,037	3 days	-	MOSFET 2N-CH 30V 8A 8-SOIC MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 8A 8-SOIC	Cut Tape (CT)	TrenchFET	8-SOIC (0.154"，3.90mm Width)	8-SO	3.1W	2 N-Channel (Dual)	Standard	30V	8A	16 mOhm @ 5A，10V	62nC @ 10V	2070pF @ 15V
	SI4922BDY-T1-E3	Vishay Siliconix	16,037	3 days	-	MOSFET 2N-CH 30V 8A 8-SOIC MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 8A 8-SOIC	-	TrenchFET	8-SOIC (0.154"，3.90mm Width)	8-SO	3.1W	2 N-Channel (Dual)	Standard	30V	8A	16 mOhm @ 5A，10V	62nC @ 10V	2070pF @ 15V
	DMC4050SSD-13	Diodes Incorporated	22,500	3 days	-	MOSFET N/P-CH 40V 5.3A 8SO MOQ: 1 MPQ: 1	MOSFET N/P-CH 40V 5.3A 8SO	Tape & Reel (TR)	-	8-SOIC (0.154"，3.90mm Width)	8-SO	1.8W	N and P-Channel	Logic Level Gate	40V	5.3A	45 mOhm @ 3A，10V	37.56nC @ 10V	1790.8pF @ 20V
	DMC4050SSD-13	Diodes Incorporated	24,742	3 days	-	MOSFET N/P-CH 40V 5.3A 8SO MOQ: 1 MPQ: 1	MOSFET N/P-CH 40V 5.3A 8SO	Cut Tape (CT)	-	8-SOIC (0.154"，3.90mm Width)	8-SO	1.8W	N and P-Channel	Logic Level Gate	40V	5.3A	45 mOhm @ 3A，10V	37.56nC @ 10V	1790.8pF @ 20V
	DMC4050SSD-13	Diodes Incorporated	24,742	3 days	-	MOSFET N/P-CH 40V 5.3A 8SO MOQ: 1 MPQ: 1	MOSFET N/P-CH 40V 5.3A 8SO	-	-	8-SOIC (0.154"，3.90mm Width)	8-SO	1.8W	N and P-Channel	Logic Level Gate	40V	5.3A	45 mOhm @ 3A，10V	37.56nC @ 10V	1790.8pF @ 20V
	DMC4050SSDQ-13	Diodes Incorporated	2,500	3 days	-	MOSFET N/P-CH 40V 5.3A 8SO MOQ: 1 MPQ: 1	MOSFET N/P-CH 40V 5.3A 8SO	Tape & Reel (TR)	Automotive，AEC-Q101	8-SOIC (0.154"，3.90mm Width)	8-SO	1.8W	N and P-Channel Complementary	Standard	40V	5.3A	45 mOhm @ 3A，10V	37.56nC @ 10V	1790.8pF @ 20V
	DMC4050SSDQ-13	Diodes Incorporated	3,086	3 days	-	MOSFET N/P-CH 40V 5.3A 8SO MOQ: 1 MPQ: 1	MOSFET N/P-CH 40V 5.3A 8SO	Cut Tape (CT)	Automotive，AEC-Q101	8-SOIC (0.154"，3.90mm Width)	8-SO	1.8W	N and P-Channel Complementary	Standard	40V	5.3A	45 mOhm @ 3A，10V	37.56nC @ 10V	1790.8pF @ 20V
	DMC4050SSDQ-13	Diodes Incorporated	3,086	3 days	-	MOSFET N/P-CH 40V 5.3A 8SO MOQ: 1 MPQ: 1	MOSFET N/P-CH 40V 5.3A 8SO	-	Automotive，AEC-Q101	8-SOIC (0.154"，3.90mm Width)	8-SO	1.8W	N and P-Channel Complementary	Standard	40V	5.3A	45 mOhm @ 3A，10V	37.56nC @ 10V	1790.8pF @ 20V
	DMC4040SSD-13	Diodes Incorporated	10,000	3 days	-	MOSFET N/P-CH 40V 6.8A 8SO MOQ: 1 MPQ: 1	MOSFET N/P-CH 40V 6.8A 8SO	Tape & Reel (TR)	-	8-SOIC (0.154"，3.90mm Width)	8-SO	1.8W	N and P-Channel	Logic Level Gate	40V	6.8A	25 mOhm @ 3A，10V	37.6nC @ 10V	1790pF @ 20V
	DMC4040SSD-13	Diodes Incorporated	11,470	3 days	-	MOSFET N/P-CH 40V 6.8A 8SO MOQ: 1 MPQ: 1	MOSFET N/P-CH 40V 6.8A 8SO	Cut Tape (CT)	-	8-SOIC (0.154"，3.90mm Width)	8-SO	1.8W	N and P-Channel	Logic Level Gate	40V	6.8A	25 mOhm @ 3A，10V	37.6nC @ 10V	1790pF @ 20V
	DMC4040SSD-13	Diodes Incorporated	11,470	3 days	-	MOSFET N/P-CH 40V 6.8A 8SO MOQ: 1 MPQ: 1	MOSFET N/P-CH 40V 6.8A 8SO	-	-	8-SOIC (0.154"，3.90mm Width)	8-SO	1.8W	N and P-Channel	Logic Level Gate	40V	6.8A	25 mOhm @ 3A，10V	37.6nC @ 10V	1790pF @ 20V
	DMP4025LSD-13	Diodes Incorporated	Inquiry	-	-	MOSFET 2P-CH 40V 6.9A 8SO MOQ: 1 MPQ: 1	MOSFET 2P-CH 40V 6.9A 8SO	Tape & Reel (TR)	-	8-SOIC (0.154"，3.90mm Width)	8-SO	1.8W	2 P-Channel (Dual)	Logic Level Gate	40V	6.9A	25 mOhm @ 3A，10V	33.7nC @ 10V	1640pF @ 20V
	DMP4025LSD-13	Diodes Incorporated	289	3 days	-	MOSFET 2P-CH 40V 6.9A 8SO MOQ: 1 MPQ: 1	MOSFET 2P-CH 40V 6.9A 8SO	Cut Tape (CT)	-	8-SOIC (0.154"，3.90mm Width)	8-SO	1.8W	2 P-Channel (Dual)	Logic Level Gate	40V	6.9A	25 mOhm @ 3A，10V	33.7nC @ 10V	1640pF @ 20V
	DMP4025LSD-13	Diodes Incorporated	289	3 days	-	MOSFET 2P-CH 40V 6.9A 8SO MOQ: 1 MPQ: 1	MOSFET 2P-CH 40V 6.9A 8SO	-	-	8-SOIC (0.154"，3.90mm Width)	8-SO	1.8W	2 P-Channel (Dual)	Logic Level Gate	40V	6.9A	25 mOhm @ 3A，10V	33.7nC @ 10V	1640pF @ 20V
	SI4505DY-T1-E3	Vishay Siliconix	Inquiry	-	-	MOSFET N/P-CH 30V/8V 8-SOIC MOQ: 1 MPQ: 1	MOSFET N/P-CH 30V/8V 8-SOIC	Tape & Reel (TR)	TrenchFET	8-SOIC (0.154"，3.90mm Width)	8-SO	1.2W	N and P-Channel	Logic Level Gate	30V，8V	6A，3.8A	18 mOhm @ 7.8A，10V	20nC @ 5V	-
	SI4505DY-T1-GE3	Vishay Siliconix	Inquiry	-	-	MOSFET N/P-CH 30V/8V 8-SOIC MOQ: 1 MPQ: 1	MOSFET N/P-CH 30V/8V 8-SOIC	Tape & Reel (TR)	TrenchFET	8-SOIC (0.154"，3.90mm Width)	8-SO	1.2W	N and P-Channel	Logic Level Gate	30V，8V	6A，3.8A	18 mOhm @ 7.8A，10V	20nC @ 5V	-

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