Drain to Source Voltage (Vdss):
Discover 102 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Package / Case Supplier Device Package Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
SIA922EDJ-T1-GE3
Vishay Siliconix
3,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 4.5A SC70-6
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) PowerPAK? SC-70-6 Dual PowerPAK? SC-70-6 Dual 7.8W 2 N-Channel (Dual) Logic Level Gate 30V 4.5A 64 mOhm @ 3A,4.5V 12nC @ 10V -
SIA922EDJ-T1-GE3
Vishay Siliconix
4,812
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 4.5A SC70-6
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) PowerPAK? SC-70-6 Dual PowerPAK? SC-70-6 Dual 7.8W 2 N-Channel (Dual) Logic Level Gate 30V 4.5A 64 mOhm @ 3A,4.5V 12nC @ 10V -
SIA922EDJ-T1-GE3
Vishay Siliconix
4,812
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 4.5A SC70-6
- TrenchFET -55°C ~ 150°C (TJ) PowerPAK? SC-70-6 Dual PowerPAK? SC-70-6 Dual 7.8W 2 N-Channel (Dual) Logic Level Gate 30V 4.5A 64 mOhm @ 3A,4.5V 12nC @ 10V -
SIA906EDJ-T1-GE3
Vishay Siliconix
30,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 4.5A SC70-6
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) PowerPAK? SC-70-6 Dual PowerPAK? SC-70-6 Dual 7.8W 2 N-Channel (Dual) Logic Level Gate 20V 4.5A 46 mOhm @ 3.9A,4.5V 12nC @ 10V 350pF @ 10V
SIA906EDJ-T1-GE3
Vishay Siliconix
32,509
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 4.5A SC70-6
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) PowerPAK? SC-70-6 Dual PowerPAK? SC-70-6 Dual 7.8W 2 N-Channel (Dual) Logic Level Gate 20V 4.5A 46 mOhm @ 3.9A,4.5V 12nC @ 10V 350pF @ 10V
SIA906EDJ-T1-GE3
Vishay Siliconix
32,509
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 4.5A SC70-6
- TrenchFET -55°C ~ 150°C (TJ) PowerPAK? SC-70-6 Dual PowerPAK? SC-70-6 Dual 7.8W 2 N-Channel (Dual) Logic Level Gate 20V 4.5A 46 mOhm @ 3.9A,4.5V 12nC @ 10V 350pF @ 10V
SI4963BDY-T1-E3
Vishay Siliconix
7,500
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 4.9A 8-SOIC
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1.1W 2 P-Channel (Dual) Logic Level Gate 20V 4.9A 32 mOhm @ 6.5A,4.5V 21nC @ 4.5V -
SI4963BDY-T1-E3
Vishay Siliconix
8,956
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 4.9A 8-SOIC
Cut Tape (CT) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1.1W 2 P-Channel (Dual) Logic Level Gate 20V 4.9A 32 mOhm @ 6.5A,4.5V 21nC @ 4.5V -
SI4963BDY-T1-E3
Vishay Siliconix
8,956
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 4.9A 8-SOIC
- - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1.1W 2 P-Channel (Dual) Logic Level Gate 20V 4.9A 32 mOhm @ 6.5A,4.5V 21nC @ 4.5V -
SIA921EDJ-T1-GE3
Vishay Siliconix
3,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 4.5A SC70-6
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) PowerPAK? SC-70-6 Dual PowerPAK? SC-70-6 Dual 7.8W 2 P-Channel (Dual) Logic Level Gate 20V 4.5A 59 mOhm @ 3.6A,4.5V 23nC @ 10V -
SIA921EDJ-T1-GE3
Vishay Siliconix
4,933
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 4.5A SC70-6
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) PowerPAK? SC-70-6 Dual PowerPAK? SC-70-6 Dual 7.8W 2 P-Channel (Dual) Logic Level Gate 20V 4.5A 59 mOhm @ 3.6A,4.5V 23nC @ 10V -
SIA921EDJ-T1-GE3
Vishay Siliconix
4,933
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 4.5A SC70-6
- TrenchFET -55°C ~ 150°C (TJ) PowerPAK? SC-70-6 Dual PowerPAK? SC-70-6 Dual 7.8W 2 P-Channel (Dual) Logic Level Gate 20V 4.5A 59 mOhm @ 3.6A,4.5V 23nC @ 10V -
CSD85312Q3E
Texas Instruments
2,500
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 39A 8VSON
Tape & Reel (TR) NexFET -55°C ~ 150°C (TJ) 8-PowerVDFN 8-VSON (3.3x3.3) 2.5W 2 N-Channel (Dual) Common Source Logic Level Gate,5V Drive 20V 39A 12.4 mOhm @ 10A,8V 15.2nC @ 4.5V 2390pF @ 10V
CSD85312Q3E
Texas Instruments
2,949
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 39A 8VSON
Cut Tape (CT) NexFET -55°C ~ 150°C (TJ) 8-PowerVDFN 8-VSON (3.3x3.3) 2.5W 2 N-Channel (Dual) Common Source Logic Level Gate,5V Drive 20V 39A 12.4 mOhm @ 10A,8V 15.2nC @ 4.5V 2390pF @ 10V
CSD85312Q3E
Texas Instruments
2,949
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 39A 8VSON
- NexFET -55°C ~ 150°C (TJ) 8-PowerVDFN 8-VSON (3.3x3.3) 2.5W 2 N-Channel (Dual) Common Source Logic Level Gate,5V Drive 20V 39A 12.4 mOhm @ 10A,8V 15.2nC @ 4.5V 2390pF @ 10V
SI4228DY-T1-GE3
Vishay Siliconix
2,500
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 25V 8A 8-SOIC
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 3.1W 2 N-Channel (Dual) Logic Level Gate 25V 8A 18 mOhm @ 7A,10V 25nC @ 10V 790pF @ 12.5V
SI4228DY-T1-GE3
Vishay Siliconix
4,589
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 25V 8A 8-SOIC
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 3.1W 2 N-Channel (Dual) Logic Level Gate 25V 8A 18 mOhm @ 7A,10V 25nC @ 10V 790pF @ 12.5V
SI4228DY-T1-GE3
Vishay Siliconix
4,589
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 25V 8A 8-SOIC
- TrenchFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 3.1W 2 N-Channel (Dual) Logic Level Gate 25V 8A 18 mOhm @ 7A,10V 25nC @ 10V 790pF @ 12.5V
DMP2075UFDB-7
Diodes Incorporated
3,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET P-CH 20V 6UDFN
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 6-UDFN Exposed Pad U-DFN2020-6 (Type B) 700mW (Ta) 2 P-Channel (Dual) Standard 20V 3.8A (Ta) 75 mOhm @ 2.9A,4.5V 8.8nC @ 4.5V 642pF @ 10V
DMP2075UFDB-7
Diodes Incorporated
3,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET P-CH 20V 6UDFN
Cut Tape (CT) - -55°C ~ 150°C (TJ) 6-UDFN Exposed Pad U-DFN2020-6 (Type B) 700mW (Ta) 2 P-Channel (Dual) Standard 20V 3.8A (Ta) 75 mOhm @ 2.9A,4.5V 8.8nC @ 4.5V 642pF @ 10V