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Discover 947 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Vishay Siliconix |
15,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 60V 0.19A SC-89
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Tape & Reel (TR) | TrenchFET | -55°C ~ 150°C (TJ) | SOT-563，SOT-666 | SC-89-6 | Surface Mount | 250mW | 2 P-Channel (Dual) | Logic Level Gate | 60V | 190mA | 4 Ohm @ 500mA，10V | 1.7nC @ 15V | 23pF @ 25V | ||
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Vishay Siliconix |
17,865
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 60V 0.19A SC-89
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Cut Tape (CT) | TrenchFET | -55°C ~ 150°C (TJ) | SOT-563，SOT-666 | SC-89-6 | Surface Mount | 250mW | 2 P-Channel (Dual) | Logic Level Gate | 60V | 190mA | 4 Ohm @ 500mA，10V | 1.7nC @ 15V | 23pF @ 25V | ||
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Vishay Siliconix |
17,865
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 60V 0.19A SC-89
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- | TrenchFET | -55°C ~ 150°C (TJ) | SOT-563，SOT-666 | SC-89-6 | Surface Mount | 250mW | 2 P-Channel (Dual) | Logic Level Gate | 60V | 190mA | 4 Ohm @ 500mA，10V | 1.7nC @ 15V | 23pF @ 25V | ||
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Diodes Incorporated |
30,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 60V 5A 8SO
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 1.3W | 2 N-Channel (Dual) | Logic Level Gate | 60V | 5A | 40 mOhm @ 4.5A，10V | 22.4nC @ 10V | 1287pF @ 25V | ||
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Diodes Incorporated |
30,308
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 60V 5A 8SO
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Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 1.3W | 2 N-Channel (Dual) | Logic Level Gate | 60V | 5A | 40 mOhm @ 4.5A，10V | 22.4nC @ 10V | 1287pF @ 25V | ||
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Diodes Incorporated |
30,308
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 60V 5A 8SO
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- | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 1.3W | 2 N-Channel (Dual) | Logic Level Gate | 60V | 5A | 40 mOhm @ 4.5A，10V | 22.4nC @ 10V | 1287pF @ 25V | ||
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Diodes Incorporated |
12,500
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 10A 8SO
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 1.42W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 10A | 20 mOhm @ 8.5A，10V | 10.5nC @ 10V | 478.9pF @ 16V | ||
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Diodes Incorporated |
14,781
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 10A 8SO
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Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 1.42W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 10A | 20 mOhm @ 8.5A，10V | 10.5nC @ 10V | 478.9pF @ 16V | ||
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Diodes Incorporated |
14,781
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 10A 8SO
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- | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 1.42W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 10A | 20 mOhm @ 8.5A，10V | 10.5nC @ 10V | 478.9pF @ 16V | ||
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Alpha & Omega Semiconductor Inc. |
70,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 40V 12A TO252-4
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Tape & Reel (TR) | - | -55°C ~ 175°C (TJ) | TO-252-5，DPak (4 Leads + Tab)，TO-252AD | TO-252-4L | Surface Mount | 2W | N and P-Channel，Common Drain | Logic Level Gate | 40V | 12A | 30 mOhm @ 12A，10V | 10.8nC @ 10V | 650pF @ 20V | ||
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Alpha & Omega Semiconductor Inc. |
71,381
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 40V 12A TO252-4
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Cut Tape (CT) | - | -55°C ~ 175°C (TJ) | TO-252-5，DPak (4 Leads + Tab)，TO-252AD | TO-252-4L | Surface Mount | 2W | N and P-Channel，Common Drain | Logic Level Gate | 40V | 12A | 30 mOhm @ 12A，10V | 10.8nC @ 10V | 650pF @ 20V | ||
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Alpha & Omega Semiconductor Inc. |
71,381
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 40V 12A TO252-4
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- | - | -55°C ~ 175°C (TJ) | TO-252-5，DPak (4 Leads + Tab)，TO-252AD | TO-252-4L | Surface Mount | 2W | N and P-Channel，Common Drain | Logic Level Gate | 40V | 12A | 30 mOhm @ 12A，10V | 10.8nC @ 10V | 650pF @ 20V | ||
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ON Semiconductor |
5,000
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 30V 8SOIC
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Tape & Reel (TR) | PowerTrench | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 900mW | N and P-Channel | Logic Level Gate | 30V | 6.4A，4.5A | 26 mOhm @ 6.4A，10V | 12nC @ 10V | 540pF @ 15V | ||
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ON Semiconductor |
6,906
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 30V 8SOIC
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Cut Tape (CT) | PowerTrench | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 900mW | N and P-Channel | Logic Level Gate | 30V | 6.4A，4.5A | 26 mOhm @ 6.4A，10V | 12nC @ 10V | 540pF @ 15V | ||
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ON Semiconductor |
6,906
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 30V 8SOIC
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- | PowerTrench | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 900mW | N and P-Channel | Logic Level Gate | 30V | 6.4A，4.5A | 26 mOhm @ 6.4A，10V | 12nC @ 10V | 540pF @ 15V | ||
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Vishay Siliconix |
20,000
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 6.9A 8-SOIC
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Tape & Reel (TR) | TrenchFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 2.8W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6.9A | 35 mOhm @ 5.9A，10V | 15nC @ 10V | 530pF @ 15V | ||
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Vishay Siliconix |
20,137
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 6.9A 8-SOIC
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Cut Tape (CT) | TrenchFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 2.8W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6.9A | 35 mOhm @ 5.9A，10V | 15nC @ 10V | 530pF @ 15V | ||
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Vishay Siliconix |
20,137
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 6.9A 8-SOIC
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- | TrenchFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 2.8W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6.9A | 35 mOhm @ 5.9A，10V | 15nC @ 10V | 530pF @ 15V | ||
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ON Semiconductor |
15,000
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 4.8A MICROFET
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Tape & Reel (TR) | PowerTrench | -55°C ~ 150°C (TJ) | 8-PowerWDFN | 8-MLP，MicroFET (3x1.9) | Surface Mount | 750mW | 2 N-Channel (Dual) | Logic Level Gate | 30V | 4.8A | 40 mOhm @ 4.8A，10V | 5.6nC @ 5V | 465pF @ 15V | ||
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ON Semiconductor |
19,198
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 4.8A MICROFET
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Cut Tape (CT) | PowerTrench | -55°C ~ 150°C (TJ) | 8-PowerWDFN | 8-MLP，MicroFET (3x1.9) | Surface Mount | 750mW | 2 N-Channel (Dual) | Logic Level Gate | 30V | 4.8A | 40 mOhm @ 4.8A，10V | 5.6nC @ 5V | 465pF @ 15V |
