Drain to Source Voltage (Vdss):
Discover 183 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Package / Case Supplier Device Package Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
SI3932DV-T1-GE3
Vishay Siliconix
12,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 3.7A 6-TSOP
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 6-TSOP 1.4W 2 N-Channel (Dual) Logic Level Gate 30V 3.7A 58 mOhm @ 3.4A,10V 6nC @ 10V 235pF @ 15V
SI3932DV-T1-GE3
Vishay Siliconix
13,024
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 3.7A 6-TSOP
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 6-TSOP 1.4W 2 N-Channel (Dual) Logic Level Gate 30V 3.7A 58 mOhm @ 3.4A,10V 6nC @ 10V 235pF @ 15V
SI3932DV-T1-GE3
Vishay Siliconix
13,024
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 3.7A 6-TSOP
- TrenchFET -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 6-TSOP 1.4W 2 N-Channel (Dual) Logic Level Gate 30V 3.7A 58 mOhm @ 3.4A,10V 6nC @ 10V 235pF @ 15V
SI5936DU-T1-GE3
Vishay Siliconix
6,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 6A PWRPK CHPFET
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) PowerPAK? ChipFET? Dual PowerPAK? ChipFet Dual 10.4W 2 N-Channel (Dual) Logic Level Gate 30V 6A 30 mOhm @ 5A,10V 11nC @ 10V 320pF @ 15V
SI5936DU-T1-GE3
Vishay Siliconix
7,416
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 6A PWRPK CHPFET
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) PowerPAK? ChipFET? Dual PowerPAK? ChipFet Dual 10.4W 2 N-Channel (Dual) Logic Level Gate 30V 6A 30 mOhm @ 5A,10V 11nC @ 10V 320pF @ 15V
SI5936DU-T1-GE3
Vishay Siliconix
7,416
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 6A PWRPK CHPFET
- TrenchFET -55°C ~ 150°C (TJ) PowerPAK? ChipFET? Dual PowerPAK? ChipFet Dual 10.4W 2 N-Channel (Dual) Logic Level Gate 30V 6A 30 mOhm @ 5A,10V 11nC @ 10V 320pF @ 15V
SI7997DP-T1-GE3
Vishay Siliconix
18,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 30V 60A PPAK SO-8
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) PowerPAK? SO-8 Dual PowerPAK? SO-8 Dual 46W 2 P-Channel (Dual) Standard 30V 60A 5.5 mOhm @ 20A,10V 160nC @ 10V 6200pF @ 15V
SI7997DP-T1-GE3
Vishay Siliconix
19,380
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 30V 60A PPAK SO-8
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) PowerPAK? SO-8 Dual PowerPAK? SO-8 Dual 46W 2 P-Channel (Dual) Standard 30V 60A 5.5 mOhm @ 20A,10V 160nC @ 10V 6200pF @ 15V
SI7997DP-T1-GE3
Vishay Siliconix
19,380
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 30V 60A PPAK SO-8
- TrenchFET -55°C ~ 150°C (TJ) PowerPAK? SO-8 Dual PowerPAK? SO-8 Dual 46W 2 P-Channel (Dual) Standard 30V 60A 5.5 mOhm @ 20A,10V 160nC @ 10V 6200pF @ 15V
FDPC8011S
ON Semiconductor
6,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 25V 13A/27A 8PQFN
Tape & Reel (TR) PowerTrench -55°C ~ 150°C (TJ) 8-PowerWDFN Powerclip-33 800mW,900mW 2 N-Channel (Dual) Asymmetrical Logic Level Gate 25V 13A,27A 6 mOhm @ 13A,10V 19nC @ 10V 1240pF @ 13V
FDPC8011S
ON Semiconductor
9,533
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 25V 13A/27A 8PQFN
Cut Tape (CT) PowerTrench -55°C ~ 150°C (TJ) 8-PowerWDFN Powerclip-33 800mW,900mW 2 N-Channel (Dual) Asymmetrical Logic Level Gate 25V 13A,27A 6 mOhm @ 13A,10V 19nC @ 10V 1240pF @ 13V
FDPC8011S
ON Semiconductor
9,533
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 25V 13A/27A 8PQFN
- PowerTrench -55°C ~ 150°C (TJ) 8-PowerWDFN Powerclip-33 800mW,900mW 2 N-Channel (Dual) Asymmetrical Logic Level Gate 25V 13A,27A 6 mOhm @ 13A,10V 19nC @ 10V 1240pF @ 13V
DMN3135LVT-7
Diodes Incorporated
6,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 3.5A TSOT26
Tape & Reel (TR) - -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 TSOT-26 840mW 2 N-Channel (Dual) Logic Level Gate 30V 3.5A 60 mOhm @ 3.1A,10V 4.1nC @ 4.5V 305pF @ 15V
DMN3135LVT-7
Diodes Incorporated
8,894
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 3.5A TSOT26
Cut Tape (CT) - -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 TSOT-26 840mW 2 N-Channel (Dual) Logic Level Gate 30V 3.5A 60 mOhm @ 3.1A,10V 4.1nC @ 4.5V 305pF @ 15V
DMN3135LVT-7
Diodes Incorporated
8,894
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 3.5A TSOT26
- - -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 TSOT-26 840mW 2 N-Channel (Dual) Logic Level Gate 30V 3.5A 60 mOhm @ 3.1A,10V 4.1nC @ 4.5V 305pF @ 15V
SIA931DJ-T1-GE3
Vishay Siliconix
12,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 30V 4.5A SC70-6L
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) PowerPAK? SC-70-6 Dual PowerPAK? SC-70-6 Dual 7.8W 2 P-Channel (Dual) Logic Level Gate 30V 4.5A 65 mOhm @ 3A,10V 13nC @ 10V 445pF @ 15V
SIA931DJ-T1-GE3
Vishay Siliconix
14,276
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 30V 4.5A SC70-6L
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) PowerPAK? SC-70-6 Dual PowerPAK? SC-70-6 Dual 7.8W 2 P-Channel (Dual) Logic Level Gate 30V 4.5A 65 mOhm @ 3A,10V 13nC @ 10V 445pF @ 15V
SIA931DJ-T1-GE3
Vishay Siliconix
14,276
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 30V 4.5A SC70-6L
- TrenchFET -55°C ~ 150°C (TJ) PowerPAK? SC-70-6 Dual PowerPAK? SC-70-6 Dual 7.8W 2 P-Channel (Dual) Logic Level Gate 30V 4.5A 65 mOhm @ 3A,10V 13nC @ 10V 445pF @ 15V
SIZ918DT-T1-GE3
Vishay Siliconix
3,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 16A POWERPAIR
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) 8-PowerWDFN 8-PowerPair? 29W,100W 2 N-Channel (Half Bridge) Logic Level Gate 30V 16A,28A 12 mOhm @ 13.8A,10V 21nC @ 10V 790pF @ 15V
SIZ918DT-T1-GE3
Vishay Siliconix
4,445
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 16A POWERPAIR
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) 8-PowerWDFN 8-PowerPair? 29W,100W 2 N-Channel (Half Bridge) Logic Level Gate 30V 16A,28A 12 mOhm @ 13.8A,10V 21nC @ 10V 790pF @ 15V