Discover 25 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Package / Case Supplier Device Package Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
SI5515CDC-T1-GE3
Vishay Siliconix
72,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 4A 1206-8
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) 8-SMD,Flat Lead 1206-8 ChipFET? 3.1W N and P-Channel Logic Level Gate 20V 4A 36 mOhm @ 6A,4.5V 11.3nC @ 5V 632pF @ 10V
SI5515CDC-T1-GE3
Vishay Siliconix
72,375
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 4A 1206-8
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) 8-SMD,Flat Lead 1206-8 ChipFET? 3.1W N and P-Channel Logic Level Gate 20V 4A 36 mOhm @ 6A,4.5V 11.3nC @ 5V 632pF @ 10V
SI5515CDC-T1-GE3
Vishay Siliconix
72,375
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 4A 1206-8
- TrenchFET -55°C ~ 150°C (TJ) 8-SMD,Flat Lead 1206-8 ChipFET? 3.1W N and P-Channel Logic Level Gate 20V 4A 36 mOhm @ 6A,4.5V 11.3nC @ 5V 632pF @ 10V
TSM500P02DCQ RFG
Taiwan Semiconductor Corporation
6,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2 P-CH 20V 4.7A 6TDFN
Tape & Reel (TR) - -50°C ~ 150°C (TJ) 6-VDFN Exposed Pad 6-TDFN (2x2) 620mW 2 P-Channel (Dual) Standard 20V 4.7A (Tc) 50 mOhm @ 3A,4.5V 9.6nC @ 4.5V 1230pF @ 10V
TSM500P02DCQ RFG
Taiwan Semiconductor Corporation
6,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2 P-CH 20V 4.7A 6TDFN
Cut Tape (CT) - -50°C ~ 150°C (TJ) 6-VDFN Exposed Pad 6-TDFN (2x2) 620mW 2 P-Channel (Dual) Standard 20V 4.7A (Tc) 50 mOhm @ 3A,4.5V 9.6nC @ 4.5V 1230pF @ 10V
TSM500P02DCQ RFG
Taiwan Semiconductor Corporation
6,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2 P-CH 20V 4.7A 6TDFN
- - -50°C ~ 150°C (TJ) 6-VDFN Exposed Pad 6-TDFN (2x2) 620mW 2 P-Channel (Dual) Standard 20V 4.7A (Tc) 50 mOhm @ 3A,4.5V 9.6nC @ 4.5V 1230pF @ 10V
TSM250N02DCQ RFG
Taiwan Semiconductor Corporation
3,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2 N-CH 20V 5.8A 6TDFN
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 6-VDFN Exposed Pad 6-TDFN (2x2) 620mW 2 N-Channel (Dual) Standard 20V 5.8A (Tc) 25 mOhm @ 4A,4.5V 7.7nC @ 4.5V 775pF @ 10V
TSM250N02DCQ RFG
Taiwan Semiconductor Corporation
5,695
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2 N-CH 20V 5.8A 6TDFN
Cut Tape (CT) - -55°C ~ 150°C (TJ) 6-VDFN Exposed Pad 6-TDFN (2x2) 620mW 2 N-Channel (Dual) Standard 20V 5.8A (Tc) 25 mOhm @ 4A,4.5V 7.7nC @ 4.5V 775pF @ 10V
TSM250N02DCQ RFG
Taiwan Semiconductor Corporation
5,695
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2 N-CH 20V 5.8A 6TDFN
- - -55°C ~ 150°C (TJ) 6-VDFN Exposed Pad 6-TDFN (2x2) 620mW 2 N-Channel (Dual) Standard 20V 5.8A (Tc) 25 mOhm @ 4A,4.5V 7.7nC @ 4.5V 775pF @ 10V
SI5515CDC-T1-E3
Vishay Siliconix
3,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 4A 1206-8
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) 8-SMD,Flat Lead 1206-8 ChipFET? 3.1W N and P-Channel Logic Level Gate 20V 4A (Tc) 36 mOhm @ 6A,4.5V 11.3nC @ 5V 632pF @ 10V
SI5515CDC-T1-E3
Vishay Siliconix
3,710
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 4A 1206-8
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) 8-SMD,Flat Lead - 3.1W N and P-Channel Logic Level Gate 20V 4A (Tc) 36 mOhm @ 6A,4.5V 11.3nC @ 5V 632pF @ 10V
SI5515CDC-T1-E3
Vishay Siliconix
3,710
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 4A 1206-8
- TrenchFET -55°C ~ 150°C (TJ) 8-SMD,Flat Lead - 3.1W N and P-Channel Logic Level Gate 20V 4A (Tc) 36 mOhm @ 6A,4.5V 11.3nC @ 5V 632pF @ 10V
SI6943BDQ-T1-E3
Vishay Siliconix
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 12V 2.3A 8TSSOP
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) 8-TSSOP (0.173",4.40mm Width) 8-TSSOP 800mW 2 P-Channel (Dual) Logic Level Gate 12V 2.3A 80 mOhm @ 2.5A,4.5V 10nC @ 4.5V -
SI6943BDQ-T1-E3
Vishay Siliconix
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 12V 2.3A 8TSSOP
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) 8-TSSOP (0.173",4.40mm Width) 8-TSSOP 800mW 2 P-Channel (Dual) Logic Level Gate 12V 2.3A 80 mOhm @ 2.5A,4.5V 10nC @ 4.5V -
SI6943BDQ-T1-E3
Vishay Siliconix
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 12V 2.3A 8TSSOP
- TrenchFET -55°C ~ 150°C (TJ) 8-TSSOP (0.173",4.40mm Width) 8-TSSOP 800mW 2 P-Channel (Dual) Logic Level Gate 12V 2.3A 80 mOhm @ 2.5A,4.5V 10nC @ 4.5V -
SI6969BDQ-T1-E3
Vishay Siliconix
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 12V 4A 8TSSOP
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) 8-TSSOP (0.173",4.40mm Width) 8-TSSOP 830mW 2 P-Channel (Dual) Logic Level Gate 12V 4A 30 mOhm @ 4.6A,4.5V 25nC @ 4.5V -
SI6969BDQ-T1-E3
Vishay Siliconix
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 12V 4A 8TSSOP
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) 8-TSSOP (0.173",4.40mm Width) 8-TSSOP 830mW 2 P-Channel (Dual) Logic Level Gate 12V 4A 30 mOhm @ 4.6A,4.5V 25nC @ 4.5V -
SI6969BDQ-T1-E3
Vishay Siliconix
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 12V 4A 8TSSOP
- TrenchFET -55°C ~ 150°C (TJ) 8-TSSOP (0.173",4.40mm Width) 8-TSSOP 830mW 2 P-Channel (Dual) Logic Level Gate 12V 4A 30 mOhm @ 4.6A,4.5V 25nC @ 4.5V -
SIB914DK-T1-GE3
Vishay Siliconix
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 8V 1.5A PPAK SC75-6
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) PowerPAK? SC-75-6L Dual PowerPAK? SC-75-6L Dual 3.1W 2 N-Channel (Dual) Standard 8V 1.5A 113 mOhm @ 2.5A,4.5V 2.6nC @ 5V 125pF @ 4V
SIB914DK-T1-GE3
Vishay Siliconix
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 8V 1.5A PPAK SC75-6
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) PowerPAK? SC-75-6L Dual PowerPAK? SC-75-6L Dual 3.1W 2 N-Channel (Dual) Standard 8V 1.5A 113 mOhm @ 2.5A,4.5V 2.6nC @ 5V 125pF @ 4V