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Discover 110 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Texas Instruments |
15,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 15A 8SON
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Tape & Reel (TR) | NexFET | -55°C ~ 150°C (TJ) | 8-PowerLDFN | 8-LSON (5x6) | 6W | 2 N-Channel (Half Bridge) | Standard | 30V | 15A | - | 3.2nC @ 4.5V | 518pF @ 15V | ||
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Texas Instruments |
20,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 20A 8SON
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Tape & Reel (TR) | NexFET | -55°C ~ 150°C (TJ) | 8-PowerLDFN | 8-LSON (3.3x3.3) | 6W | 2 N-Channel (Half Bridge) | Logic Level Gate | 30V | 20A | - | 5.8nC @ 4.5V | 900pF @ 15V | ||
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Texas Instruments |
21,271
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 20A 8SON
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Cut Tape (CT) | NexFET | -55°C ~ 150°C (TJ) | 8-PowerLDFN | 8-LSON (3.3x3.3) | 6W | 2 N-Channel (Half Bridge) | Logic Level Gate | 30V | 20A | - | 5.8nC @ 4.5V | 900pF @ 15V | ||
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Texas Instruments |
21,271
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 20A 8SON
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- | NexFET | -55°C ~ 150°C (TJ) | 8-PowerLDFN | 8-LSON (3.3x3.3) | 6W | 2 N-Channel (Half Bridge) | Logic Level Gate | 30V | 20A | - | 5.8nC @ 4.5V | 900pF @ 15V | ||
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Texas Instruments |
35,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 25V 20A 8SON
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Tape & Reel (TR) | NexFET | -55°C ~ 150°C (TJ) | 8-PowerLDFN | 8-LSON (5x6) | 6W | 2 N-Channel (Half Bridge) | Logic Level Gate | 25V | 20A | 9.6 mOhm @ 14A，8V | 6.2nC @ 4.5V | 920pF @ 12.5V | ||
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Texas Instruments |
36,721
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 25V 20A 8SON
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Cut Tape (CT) | NexFET | -55°C ~ 150°C (TJ) | 8-PowerLDFN | 8-LSON (5x6) | 6W | 2 N-Channel (Half Bridge) | Logic Level Gate | 25V | 20A | 9.6 mOhm @ 14A，8V | 6.2nC @ 4.5V | 920pF @ 12.5V | ||
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Texas Instruments |
36,721
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 25V 20A 8SON
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- | NexFET | -55°C ~ 150°C (TJ) | 8-PowerLDFN | 8-LSON (5x6) | 6W | 2 N-Channel (Half Bridge) | Logic Level Gate | 25V | 20A | 9.6 mOhm @ 14A，8V | 6.2nC @ 4.5V | 920pF @ 12.5V | ||
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Texas Instruments |
2,500
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 32A 8LSON
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Tape & Reel (TR) | NexFET | -55°C ~ 150°C (TJ) | 8-PowerLDFN | 8-LSON (5x6) | 12W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 32A | 7.6 mOhm @ 20A，8V | 7.7nC @ 4.5V | 1255pF @ 15V | ||
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Texas Instruments |
5,600
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 32A 8LSON
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Cut Tape (CT) | NexFET | -55°C ~ 150°C (TJ) | 8-PowerLDFN | 8-LSON (5x6) | 12W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 32A | 7.6 mOhm @ 20A，8V | 7.7nC @ 4.5V | 1255pF @ 15V | ||
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Texas Instruments |
5,600
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 32A 8LSON
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- | NexFET | -55°C ~ 150°C (TJ) | 8-PowerLDFN | 8-LSON (5x6) | 12W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 32A | 7.6 mOhm @ 20A，8V | 7.7nC @ 4.5V | 1255pF @ 15V | ||
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Nexperia USA Inc. |
4,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 50V 0.17A SOT666
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Tape & Reel (TR) | Automotive，AEC-Q101，TrenchMOS | -55°C ~ 150°C (TJ) | SOT-563，SOT-666 | SOT-666 | 500mW | 2 P-Channel (Dual) | Logic Level Gate | 50V | 170mA | 7.5 Ohm @ 100mA，10V | 0.35nC @ 5V | 36pF @ 25V | ||
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Nexperia USA Inc. |
5,923
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 50V 0.17A SOT666
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Cut Tape (CT) | Automotive，AEC-Q101，TrenchMOS | -55°C ~ 150°C (TJ) | SOT-563，SOT-666 | SOT-666 | 500mW | 2 P-Channel (Dual) | Logic Level Gate | 50V | 170mA | 7.5 Ohm @ 100mA，10V | 0.35nC @ 5V | 36pF @ 25V | ||
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Nexperia USA Inc. |
5,923
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 50V 0.17A SOT666
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- | Automotive，AEC-Q101，TrenchMOS | -55°C ~ 150°C (TJ) | SOT-563，SOT-666 | SOT-666 | 500mW | 2 P-Channel (Dual) | Logic Level Gate | 50V | 170mA | 7.5 Ohm @ 100mA，10V | 0.35nC @ 5V | 36pF @ 25V | ||
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Diodes Incorporated |
9,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 50V 0.16A SOT-563
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | SOT-563，SOT-666 | SOT-563 | 400mW | 2 P-Channel (Dual) | Logic Level Gate | 50V | 160mA | 8 Ohm @ 100mA，5V | - | 27pF @ 25V | ||
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Diodes Incorporated |
9,040
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 50V 0.16A SOT-563
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Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | SOT-563，SOT-666 | SOT-563 | 400mW | 2 P-Channel (Dual) | Logic Level Gate | 50V | 160mA | 8 Ohm @ 100mA，5V | - | 27pF @ 25V | ||
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Diodes Incorporated |
9,040
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 50V 0.16A SOT-563
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- | - | -55°C ~ 150°C (TJ) | SOT-563，SOT-666 | SOT-563 | 400mW | 2 P-Channel (Dual) | Logic Level Gate | 50V | 160mA | 8 Ohm @ 100mA，5V | - | 27pF @ 25V | ||
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Diodes Incorporated |
10,000
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 6.7A 8SO
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.5W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6.7A | 22 mOhm @ 10A，10V | 13.2nC @ 10V | 697pF @ 15V | ||
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Diodes Incorporated |
11,637
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 6.7A 8SO
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Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.5W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6.7A | 22 mOhm @ 10A，10V | 13.2nC @ 10V | 697pF @ 15V | ||
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Diodes Incorporated |
11,637
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 6.7A 8SO
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- | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.5W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6.7A | 22 mOhm @ 10A，10V | 13.2nC @ 10V | 697pF @ 15V | ||
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Infineon Technologies |
10,000
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 6A 8DSO
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Tape & Reel (TR) | OptiMOS | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | PG-DSO-8 | 1.4W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6A | 22 mOhm @ 7.7A，10V | 10nC @ 10V | 800pF @ 15V |
