- Manufacturer：
-
- Series：
-
- Operating Temperature：
-
- Package / Case：
-
- Supplier Device Package：
-
- Mounting Type：
-
- Power - Max：
-
- FET Type：
-
- FET Feature：
-
- Drain to Source Voltage (Vdss)：
-
- Current - Continuous Drain (Id) @ 25°C：
-
- Rds On (Max) @ Id，Vgs：
-
- Gate Charge (Qg) (Max) @ Vgs：
-
- Input Capacitance (Ciss) (Max) @ Vds：
-
- Selected conditions:
Discover 153 products
 |
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|
|
|
ON Semiconductor |
12,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 400V 0.45A 8SOP
|
Tape & Reel (TR) | QFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOP | Surface Mount | 2W | 2 N-Channel (Dual) | Standard | 400V | 450mA | 4.2 Ohm @ 225mA，10V | 7.5nC @ 10V | 210pF @ 25V | ||
|
|
|
ON Semiconductor |
13,111
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 400V 0.45A 8SOP
|
Cut Tape (CT) | QFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOP | Surface Mount | 2W | 2 N-Channel (Dual) | Standard | 400V | 450mA | 4.2 Ohm @ 225mA，10V | 7.5nC @ 10V | 210pF @ 25V | ||
|
|
|
ON Semiconductor |
13,111
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 400V 0.45A 8SOP
|
- | QFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOP | Surface Mount | 2W | 2 N-Channel (Dual) | Standard | 400V | 450mA | 4.2 Ohm @ 225mA，10V | 7.5nC @ 10V | 210pF @ 25V | ||
|
|
|
ON Semiconductor |
3,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 4N-CH 100V 3.1A 12-MLP
|
Tape & Reel (TR) | GreenBridge PowerTrench | -55°C ~ 150°C (TJ) | 12-WDFN Exposed Pad | 12-MLP (5x4.5) | Surface Mount | 1.9W | 4 N-Channel (H-Bridge) | Standard | 100V | 3.1A | 110 mOhm @ 3A，10V | 5nC @ 10V | 215pF @ 15V | ||
|
|
|
ON Semiconductor |
3,817
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 4N-CH 100V 3.1A 12-MLP
|
Cut Tape (CT) | GreenBridge PowerTrench | -55°C ~ 150°C (TJ) | 12-WDFN Exposed Pad | 12-MLP (5x4.5) | Surface Mount | 1.9W | 4 N-Channel (H-Bridge) | Standard | 100V | 3.1A | 110 mOhm @ 3A，10V | 5nC @ 10V | 215pF @ 15V | ||
|
|
|
ON Semiconductor |
3,817
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 4N-CH 100V 3.1A 12-MLP
|
- | GreenBridge PowerTrench | -55°C ~ 150°C (TJ) | 12-WDFN Exposed Pad | 12-MLP (5x4.5) | Surface Mount | 1.9W | 4 N-Channel (H-Bridge) | Standard | 100V | 3.1A | 110 mOhm @ 3A，10V | 5nC @ 10V | 215pF @ 15V | ||
|
|
|
Vishay Siliconix |
15,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 150V 2.6A PPAK SO-8
|
Tape & Reel (TR) | TrenchFET | -55°C ~ 150°C (TJ) | PowerPAK? SO-8 Dual | PowerPAK? SO-8 Dual | Surface Mount | 1.4W | 2 N-Channel (Dual) | Logic Level Gate | 150V | 2.6A | 105 mOhm @ 4.1A，10V | 26nC @ 10V | - | ||
|
|
|
Vishay Siliconix |
15,275
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 150V 2.6A PPAK SO-8
|
Cut Tape (CT) | TrenchFET | -55°C ~ 150°C (TJ) | PowerPAK? SO-8 Dual | PowerPAK? SO-8 Dual | Surface Mount | 1.4W | 2 N-Channel (Dual) | Logic Level Gate | 150V | 2.6A | 105 mOhm @ 4.1A，10V | 26nC @ 10V | - | ||
|
|
|
Vishay Siliconix |
15,275
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 150V 2.6A PPAK SO-8
|
- | TrenchFET | -55°C ~ 150°C (TJ) | PowerPAK? SO-8 Dual | PowerPAK? SO-8 Dual | Surface Mount | 1.4W | 2 N-Channel (Dual) | Logic Level Gate | 150V | 2.6A | 105 mOhm @ 4.1A，10V | 26nC @ 10V | - | ||
|
|
|
Infineon Technologies |
8,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 80V 3.6A 8-SOIC
|
Tape & Reel (TR) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 2W | 2 N-Channel (Dual) | Logic Level Gate | 80V | 3.6A | 73 mOhm @ 2.2A，10V | 23nC @ 10V | 660pF @ 25V | ||
|
|
|
Infineon Technologies |
8,048
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 80V 3.6A 8-SOIC
|
Cut Tape (CT) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 2W | 2 N-Channel (Dual) | Logic Level Gate | 80V | 3.6A | 73 mOhm @ 2.2A，10V | 23nC @ 10V | 660pF @ 25V | ||
|
|
|
Infineon Technologies |
8,048
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 80V 3.6A 8-SOIC
|
- | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 2W | 2 N-Channel (Dual) | Logic Level Gate | 80V | 3.6A | 73 mOhm @ 2.2A，10V | 23nC @ 10V | 660pF @ 25V | ||
|
|
|
Diodes Incorporated |
5,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N/2P-CH 100V 8-SOIC
|
Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOP | Surface Mount | 870mW | 2 N and 2 P-Channel (H-Bridge) | Standard | 100V | 800mA，680mA | 700 mOhm @ 1.5A，10V | 2.9nC @ 10V | 138pF @ 60V | ||
|
|
|
Diodes Incorporated |
5,921
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N/2P-CH 100V 8-SOIC
|
Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOP | Surface Mount | 870mW | 2 N and 2 P-Channel (H-Bridge) | Standard | 100V | 800mA，680mA | 700 mOhm @ 1.5A，10V | 2.9nC @ 10V | 138pF @ 60V | ||
|
|
|
Diodes Incorporated |
5,921
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N/2P-CH 100V 8-SOIC
|
- | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOP | Surface Mount | 870mW | 2 N and 2 P-Channel (H-Bridge) | Standard | 100V | 800mA，680mA | 700 mOhm @ 1.5A，10V | 2.9nC @ 10V | 138pF @ 60V | ||
|
|
|
ON Semiconductor |
7,500
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 80V 4.7A 8-SO
|
Tape & Reel (TR) | PowerTrench | -55°C ~ 175°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 900mW | 2 N-Channel (Dual) | Logic Level Gate | 80V | 4.7A | 44 mOhm @ 4.7A，10V | 35nC @ 10V | 1180pF @ 40V | ||
|
|
|
ON Semiconductor |
9,284
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 80V 4.7A 8-SO
|
Cut Tape (CT) | PowerTrench | -55°C ~ 175°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 900mW | 2 N-Channel (Dual) | Logic Level Gate | 80V | 4.7A | 44 mOhm @ 4.7A，10V | 35nC @ 10V | 1180pF @ 40V | ||
|
|
|
ON Semiconductor |
9,284
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 80V 4.7A 8-SO
|
- | PowerTrench | -55°C ~ 175°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 900mW | 2 N-Channel (Dual) | Logic Level Gate | 80V | 4.7A | 44 mOhm @ 4.7A，10V | 35nC @ 10V | 1180pF @ 40V | ||
|
|
|
ON Semiconductor |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 100V 4.5A 8-SO
|
Tape & Reel (TR) | PowerTrench | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 2.5W | 2 N-Channel (Dual) | Standard | 100V | 4.5A | 62 mOhm @ 4.5A，10V | 15nC @ 10V | 750pF @ 25V | ||
|
|
|
ON Semiconductor |
2,033
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 100V 4.5A 8-SO
|
Cut Tape (CT) | PowerTrench | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 2.5W | 2 N-Channel (Dual) | Standard | 100V | 4.5A | 62 mOhm @ 4.5A，10V | 15nC @ 10V | 750pF @ 25V |
