Drain to Source Voltage (Vdss):
Discover 110 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Package / Case Supplier Device Package Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
DMG6968UDM-7
Diodes Incorporated
54,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 6.5A SOT-26
Tape & Reel (TR) - -55°C ~ 150°C (TJ) SOT-23-6 SOT-26 850mW 2 N-Channel (Dual) Common Drain Logic Level Gate 20V 6.5A 24 mOhm @ 6.5A,4.5V 8.8nC @ 4.5V 143pF @ 10V
DMG6968UDM-7
Diodes Incorporated
56,964
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 6.5A SOT-26
Cut Tape (CT) - -55°C ~ 150°C (TJ) SOT-23-6 SOT-26 850mW 2 N-Channel (Dual) Common Drain Logic Level Gate 20V 6.5A 24 mOhm @ 6.5A,4.5V 8.8nC @ 4.5V 143pF @ 10V
DMG6968UDM-7
Diodes Incorporated
56,964
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 6.5A SOT-26
- - -55°C ~ 150°C (TJ) SOT-23-6 SOT-26 850mW 2 N-Channel (Dual) Common Drain Logic Level Gate 20V 6.5A 24 mOhm @ 6.5A,4.5V 8.8nC @ 4.5V 143pF @ 10V
DMG9926USD-13
Diodes Incorporated
7,500
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 8A SOP8L
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOP 1.3W 2 N-Channel (Dual) Logic Level Gate 20V 8A 24 mOhm @ 8.2A,4.5V 8.8nC @ 4.5V 867pF @ 15V
DMG9926USD-13
Diodes Incorporated
9,115
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 8A SOP8L
Cut Tape (CT) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOP 1.3W 2 N-Channel (Dual) Logic Level Gate 20V 8A 24 mOhm @ 8.2A,4.5V 8.8nC @ 4.5V 867pF @ 15V
DMG9926USD-13
Diodes Incorporated
9,115
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 8A SOP8L
- - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOP 1.3W 2 N-Channel (Dual) Logic Level Gate 20V 8A 24 mOhm @ 8.2A,4.5V 8.8nC @ 4.5V 867pF @ 15V
PMCPB5530X,115
Nexperia USA Inc.
42,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 6HUSON
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 6-UDFN Exposed Pad DFN2020-6 490mW N and P-Channel Logic Level Gate 20V 5.3A,3.4A 34 mOhm @ 3A,4.5V 21.7nC @ 4.5V 660pF @ 10V
PMCPB5530X,115
Nexperia USA Inc.
44,532
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 6HUSON
Cut Tape (CT) - -55°C ~ 150°C (TJ) 6-UDFN Exposed Pad DFN2020-6 490mW N and P-Channel Logic Level Gate 20V 5.3A,3.4A 34 mOhm @ 3A,4.5V 21.7nC @ 4.5V 660pF @ 10V
PMCPB5530X,115
Nexperia USA Inc.
44,532
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 6HUSON
- - -55°C ~ 150°C (TJ) 6-UDFN Exposed Pad DFN2020-6 490mW N and P-Channel Logic Level Gate 20V 5.3A,3.4A 34 mOhm @ 3A,4.5V 21.7nC @ 4.5V 660pF @ 10V
DMG9926UDM-7
Diodes Incorporated
9,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 4.2A SOT-26
Tape & Reel (TR) - -55°C ~ 150°C (TJ) SOT-23-6 SOT-26 980mW 2 N-Channel (Dual) Common Drain Logic Level Gate 20V 4.2A 28 mOhm @ 8.2A,4.5V 8.3nC @ 4.5V 856pF @ 10V
DMG9926UDM-7
Diodes Incorporated
12,717
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 4.2A SOT-26
Cut Tape (CT) - -55°C ~ 150°C (TJ) SOT-23-6 SOT-26 980mW 2 N-Channel (Dual) Common Drain Logic Level Gate 20V 4.2A 28 mOhm @ 8.2A,4.5V 8.3nC @ 4.5V 856pF @ 10V
DMG9926UDM-7
Diodes Incorporated
12,717
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 4.2A SOT-26
- - -55°C ~ 150°C (TJ) SOT-23-6 SOT-26 980mW 2 N-Channel (Dual) Common Drain Logic Level Gate 20V 4.2A 28 mOhm @ 8.2A,4.5V 8.3nC @ 4.5V 856pF @ 10V
AO7801
Alpha & Omega Semiconductor Inc.
6,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V SC70-6
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 6-TSSOP,SC-88,SOT-363 SC-70-6 300mW 2 P-Channel (Dual) Logic Level Gate 20V - 520 mOhm @ 600mA,4.5V 1.8nC @ 4.5V 140pF @ 10V
AO7801
Alpha & Omega Semiconductor Inc.
8,518
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V SC70-6
Cut Tape (CT) - -55°C ~ 150°C (TJ) 6-TSSOP,SC-88,SOT-363 SC-70-6 300mW 2 P-Channel (Dual) Logic Level Gate 20V - 520 mOhm @ 600mA,4.5V 1.8nC @ 4.5V 140pF @ 10V
AO7801
Alpha & Omega Semiconductor Inc.
8,518
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V SC70-6
- - -55°C ~ 150°C (TJ) 6-TSSOP,SC-88,SOT-363 SC-70-6 300mW 2 P-Channel (Dual) Logic Level Gate 20V - 520 mOhm @ 600mA,4.5V 1.8nC @ 4.5V 140pF @ 10V
SIA914ADJ-T1-GE3
Vishay Siliconix
6,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 4.5A SC70-6L
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) PowerPAK? SC-70-6 Dual PowerPAK? SC-70-6 Dual 7.8W 2 N-Channel (Dual) Logic Level Gate 20V 4.5A 43 mOhm @ 3.7A,4.5V 12.5nC @ 8V 470pF @ 10V
SIA914ADJ-T1-GE3
Vishay Siliconix
6,919
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 4.5A SC70-6L
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) PowerPAK? SC-70-6 Dual PowerPAK? SC-70-6 Dual 7.8W 2 N-Channel (Dual) Logic Level Gate 20V 4.5A 43 mOhm @ 3.7A,4.5V 12.5nC @ 8V 470pF @ 10V
SIA914ADJ-T1-GE3
Vishay Siliconix
6,919
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 4.5A SC70-6L
- TrenchFET -55°C ~ 150°C (TJ) PowerPAK? SC-70-6 Dual PowerPAK? SC-70-6 Dual 7.8W 2 N-Channel (Dual) Logic Level Gate 20V 4.5A 43 mOhm @ 3.7A,4.5V 12.5nC @ 8V 470pF @ 10V
SIA923AEDJ-T1-GE3
Vishay Siliconix
6,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 4.5A SC70-6L
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) PowerPAK? SC-70-6 Dual PowerPAK? SC-70-6 Dual 7.8W 2 P-Channel (Dual) Logic Level Gate 20V 4.5A 54 mOhm @ 3.8A,4.5V 25nC @ 8V 770pF @ 10V
SIA923AEDJ-T1-GE3
Vishay Siliconix
8,942
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 4.5A SC70-6L
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) PowerPAK? SC-70-6 Dual PowerPAK? SC-70-6 Dual 7.8W 2 P-Channel (Dual) Logic Level Gate 20V 4.5A 54 mOhm @ 3.8A,4.5V 25nC @ 8V 770pF @ 10V