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Discover 61 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Nexperia USA Inc. |
20,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 0.6A 6DFN
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Tape & Reel (TR) | TrenchFET | 6-XFDFN Exposed Pad | 6-DFN (1.1x1) | 265mW | 2 N-Channel (Dual) | Logic Level Gate | 20V | 600mA | 620 mOhm @ 600mA，4.5V | 0.7nC @ 4.5V | 21.3pF @ 10V | ||
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Nexperia USA Inc. |
25,551
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 0.6A 6DFN
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Cut Tape (CT) | TrenchFET | 6-XFDFN Exposed Pad | 6-DFN (1.1x1) | 265mW | 2 N-Channel (Dual) | Logic Level Gate | 20V | 600mA | 620 mOhm @ 600mA，4.5V | 0.7nC @ 4.5V | 21.3pF @ 10V | ||
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Nexperia USA Inc. |
25,551
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 0.6A 6DFN
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- | TrenchFET | 6-XFDFN Exposed Pad | 6-DFN (1.1x1) | 265mW | 2 N-Channel (Dual) | Logic Level Gate | 20V | 600mA | 620 mOhm @ 600mA，4.5V | 0.7nC @ 4.5V | 21.3pF @ 10V | ||
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Nexperia USA Inc. |
10,000
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 20V 0.6A/0.5A 6DFN
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Tape & Reel (TR) | TrenchFET | 6-XFDFN Exposed Pad | 6-DFN (1.1x1) | 265mW | N and P-Channel Complementary | Logic Level Gate | 20V | 600mA，500mA | 620 mOhm @ 600mA，4.5V | 0.7nC @ 4.5V | 21.3pF @ 10V | ||
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Nexperia USA Inc. |
10,370
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 20V 0.6A/0.5A 6DFN
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Cut Tape (CT) | TrenchFET | 6-XFDFN Exposed Pad | 6-DFN (1.1x1) | 265mW | N and P-Channel Complementary | Logic Level Gate | 20V | 600mA，500mA | 620 mOhm @ 600mA，4.5V | 0.7nC @ 4.5V | 21.3pF @ 10V | ||
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Nexperia USA Inc. |
10,370
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 20V 0.6A/0.5A 6DFN
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- | TrenchFET | 6-XFDFN Exposed Pad | 6-DFN (1.1x1) | 265mW | N and P-Channel Complementary | Logic Level Gate | 20V | 600mA，500mA | 620 mOhm @ 600mA，4.5V | 0.7nC @ 4.5V | 21.3pF @ 10V | ||
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Nexperia USA Inc. |
5,000
|
3 days |
-
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MOQ: 1 MPQ: 1
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20 V，DUAL N-CHANNEL TRENCH MOSF
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Tape & Reel (TR) | - | 6-XFDFN Exposed Pad | DFN1010B-6 | 380mW | 2 N-Channel (Dual) | Standard | 20V | 600mA | 620 mOhm @ 600mA，4.5V | 0.7nC @ 4.5V | 21.3pF @ 10V | ||
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Nexperia USA Inc. |
8,575
|
3 days |
-
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MOQ: 1 MPQ: 1
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20 V，DUAL N-CHANNEL TRENCH MOSF
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Cut Tape (CT) | - | 6-XFDFN Exposed Pad | DFN1010B-6 | 380mW | 2 N-Channel (Dual) | Standard | 20V | 600mA | 620 mOhm @ 600mA，4.5V | 0.7nC @ 4.5V | 21.3pF @ 10V | ||
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Nexperia USA Inc. |
8,575
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3 days |
-
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MOQ: 1 MPQ: 1
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20 V，DUAL N-CHANNEL TRENCH MOSF
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- | - | 6-XFDFN Exposed Pad | DFN1010B-6 | 380mW | 2 N-Channel (Dual) | Standard | 20V | 600mA | 620 mOhm @ 600mA，4.5V | 0.7nC @ 4.5V | 21.3pF @ 10V | ||
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Nexperia USA Inc. |
10,000
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 30V 0.41A 6DFN
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Tape & Reel (TR) | - | 6-XFDFN Exposed Pad | DFN1010B-6 | 285mW | 2 P-Channel (Dual) | Standard | 30V | 410mA | 1.4 Ohm @ 410mA，4.5V | 1.2nC @ 4.5V | 43.2pF @ 15V | ||
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Nexperia USA Inc. |
13,918
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 0.41A 6DFN
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Cut Tape (CT) | - | 6-XFDFN Exposed Pad | DFN1010B-6 | 285mW | 2 P-Channel (Dual) | Standard | 30V | 410mA | 1.4 Ohm @ 410mA，4.5V | 1.2nC @ 4.5V | 43.2pF @ 15V | ||
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Nexperia USA Inc. |
13,918
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 30V 0.41A 6DFN
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- | - | 6-XFDFN Exposed Pad | DFN1010B-6 | 285mW | 2 P-Channel (Dual) | Standard | 30V | 410mA | 1.4 Ohm @ 410mA，4.5V | 1.2nC @ 4.5V | 43.2pF @ 15V | ||
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Nexperia USA Inc. |
5,000
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 0.59A 6DFN
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Tape & Reel (TR) | - | 6-XFDFN Exposed Pad | DFN1010B-6 | 285mW | 2 N-Channel (Dual) | Standard | 30V | 590mA | 670 mOhm @ 590mA，4.5V | 1.05nC @ 4.5V | 30.3pF @ 15V | ||
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Nexperia USA Inc. |
7,362
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 0.59A 6DFN
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Cut Tape (CT) | - | 6-XFDFN Exposed Pad | DFN1010B-6 | 285mW | 2 N-Channel (Dual) | Standard | 30V | 590mA | 670 mOhm @ 590mA，4.5V | 1.05nC @ 4.5V | 30.3pF @ 15V | ||
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Nexperia USA Inc. |
7,362
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 0.59A 6DFN
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- | - | 6-XFDFN Exposed Pad | DFN1010B-6 | 285mW | 2 N-Channel (Dual) | Standard | 30V | 590mA | 670 mOhm @ 590mA，4.5V | 1.05nC @ 4.5V | 30.3pF @ 15V | ||
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Nexperia USA Inc. |
20,000
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 0.6A 6DFN
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Tape & Reel (TR) | - | 6-XFDFN Exposed Pad | DFN1010B-6 | 265mW | 2 N-Channel (Dual) | Logic Level Gate | 20V | 600mA | 620 mOhm @ 600mA，4.5V | 0.7nC @ 4.5V | 21.3pF @ 10V | ||
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Nexperia USA Inc. |
23,393
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 0.6A 6DFN
|
Cut Tape (CT) | - | 6-XFDFN Exposed Pad | DFN1010B-6 | 265mW | 2 N-Channel (Dual) | Logic Level Gate | 20V | 600mA | 620 mOhm @ 600mA，4.5V | 0.7nC @ 4.5V | 21.3pF @ 10V | ||
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Nexperia USA Inc. |
23,393
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 0.6A 6DFN
|
- | - | 6-XFDFN Exposed Pad | DFN1010B-6 | 265mW | 2 N-Channel (Dual) | Logic Level Gate | 20V | 600mA | 620 mOhm @ 600mA，4.5V | 0.7nC @ 4.5V | 21.3pF @ 10V | ||
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Diodes Incorporated |
15,000
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 2.11A 6DFN
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Tape & Reel (TR) | - | 6-XFDFN Exposed Pad | X2-DFN1310-6 | 530mW | 2 N-Channel (Dual) | Logic Level Gate | 20V | 2.11A | 195 mOhm @ 300mA，4.5V | 1.6nC @ 4.5V | 64.3pF @ 25V | ||
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Diodes Incorporated |
3,189
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 2.11A 6DFN
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Cut Tape (CT) | - | 6-XFDFN Exposed Pad | X2-DFN1310-6 | 530mW | 2 N-Channel (Dual) | Logic Level Gate | 20V | 2.11A | 195 mOhm @ 300mA，4.5V | 1.6nC @ 4.5V | 64.3pF @ 25V |
