Current - Continuous Drain (Id) @ 25°C:
Gate Charge (Qg) (Max) @ Vgs:
Discover 11 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging FET Type Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Gate Charge (Qg) (Max) @ Vgs
BSO615CGHUMA1
Infineon Technologies
Inquiry
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MOQ: 1  MPQ: 1
MOSFET N/P-CH 60V 3.1A/2A 8SOIC
Tape & Reel (TR) N and P-Channel 3.1A,2A 110 mOhm @ 3.1A,10V 22.5nC @ 10V
BSO615CGHUMA1
Infineon Technologies
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 60V 3.1A/2A 8SOIC
Cut Tape (CT) N and P-Channel 3.1A,2A 110 mOhm @ 3.1A,10V 22.5nC @ 10V
BSO615CGHUMA1
Infineon Technologies
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 60V 3.1A/2A 8SOIC
- N and P-Channel 3.1A,2A 110 mOhm @ 3.1A,10V 22.5nC @ 10V
BSO615NGHUMA1
Infineon Technologies
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 2.6A 8SOIC
Tape & Reel (TR) 2 N-Channel (Dual) 2.6A 150 mOhm @ 2.6A,4.5V 20nC @ 10V
BSO615NGHUMA1
Infineon Technologies
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 2.6A 8SOIC
Cut Tape (CT) 2 N-Channel (Dual) 2.6A 150 mOhm @ 2.6A,4.5V 20nC @ 10V
BSO615NGHUMA1
Infineon Technologies
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 2.6A 8SOIC
- 2 N-Channel (Dual) 2.6A 150 mOhm @ 2.6A,4.5V 20nC @ 10V
BSO615N
Infineon Technologies
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 2.6A 8SOIC
Tape & Reel (TR) 2 N-Channel (Dual) 2.6A 150 mOhm @ 2.6A,4.5V 20nC @ 10V
BSO615N
Infineon Technologies
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 2.6A 8SOIC
Cut Tape (CT) 2 N-Channel (Dual) 2.6A 150 mOhm @ 2.6A,4.5V 20nC @ 10V
BSO615CT
Infineon Technologies
Inquiry
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MOQ: 1  MPQ: 1
MOSFET N/P-CH 60V 3.1A/2A 8SOIC
Tape & Reel (TR) N and P-Channel 3.1A,2A 110 mOhm @ 3.1A,10V 22.5nC @ 10V
BSO615CT
Infineon Technologies
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 60V 3.1A/2A 8SOIC
Cut Tape (CT) N and P-Channel 3.1A,2A 110 mOhm @ 3.1A,10V 22.5nC @ 10V
BSO615CT
Infineon Technologies
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 60V 3.1A/2A 8SOIC
- N and P-Channel 3.1A,2A 110 mOhm @ 3.1A,10V 22.5nC @ 10V