Power - Max:
Current - Continuous Drain (Id) @ 25°C:
Gate Charge (Qg) (Max) @ Vgs:
Discover 4 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Power - Max Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Gate Charge (Qg) (Max) @ Vgs
SI4808DY-T1-E3
Vishay Siliconix
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.7A 8SOIC
1.1W 5.7A 22 mOhm @ 7.5A,10V 20nC @ 10V
SI4808DY-T1-GE3
Vishay Siliconix
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.7A 8SOIC
1.1W 5.7A 22 mOhm @ 7.5A,10V 20nC @ 10V
SI4818DY-T1-E3
Vishay Siliconix
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.3A 8-SOIC
1W,1.25W 5.3A,7A 22 mOhm @ 6.3A,10V 12nC @ 5V
SI4818DY-T1-GE3
Vishay Siliconix
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.3A 8-SOIC
1W,1.25W 5.3A,7A 22 mOhm @ 6.3A,10V 12nC @ 5V