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- Rds On (Max) @ Id，Vgs：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Selected conditions:
Discover 4 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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IXYS |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 100V 1000A Y3-LI
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-40°C ~ 175°C (TJ) | Y3-Li | Y3-Li | - | 2 N-Channel (Dual) | 100V | 1000A | 1.2 Ohm @ 800A，10V | 2355nC @ 10V | - | ||
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IXYS |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 75V 1500A Y3-LI
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-40°C ~ 175°C (TJ) | Y3-Li | Y3-Li | - | 2 N-Channel (Dual) | 75V | 1500A | 0.8 mOhm @ 1200A，10V | 2480nC @ 10V | - | ||
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Microsemi Corporation |
173
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3 days |
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 100V 495A SP6
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-40°C ~ 150°C (TJ) | SP6 | SP6 | 1250W | 2 N-Channel (Half Bridge) | 100V | 495A | 2.5 mOhm @ 200A，10V | 1360nC @ 10V | 40000pF @ 25V | |||
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Microsemi Corporation |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 100V 495A SP6
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-40°C ~ 150°C (TJ) | SP6 | SP6 | 1250W | 2 N-Channel (Dual) | 100V | 495A | 2.5 mOhm @ 200A，10V | 1360nC @ 10V | 40000pF @ 25V |
