FETs, MOSFETs - Arrays - Zui Ai Technology（Taiwan）Company.

Packaging：

Series：

Operating Temperature：

Package / Case：

Supplier Device Package：

Mounting Type：

Power - Max：

FET Type：

Drain to Source Voltage (Vdss)：

Current - Continuous Drain (Id) @ 25°C：

Rds On (Max) @ Id，Vgs：

Gate Charge (Qg) (Max) @ Vgs：

Input Capacitance (Ciss) (Max) @ Vds：

Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Operating Temperature	Package / Case	Supplier Device Package	Mounting Type	Power - Max	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id，Vgs	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Operating Temperature	Package / Case	Supplier Device Package	Mounting Type	Power - Max	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id，Vgs	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
	APTM50H14FT3G	Microsemi Corporation	15	3 days	-	MOSFET 4N-CH 500V 26A SP3 MOQ: 1 MPQ: 1	MOSFET 4N-CH 500V 26A SP3	Bulk	-	-40°C ~ 150°C (TJ)	SP3	SP3	Chassis Mount	208W	4 N-Channel (H-Bridge)	500V	26A	168 mOhm @ 13A，10V	72nC @ 10V	3259pF @ 25V
	FMM22-05PF	IXYS	Inquiry	-	-	MOSFET 2N-CH 500V 13A I4-PAC MOQ: 1 MPQ: 1	MOSFET 2N-CH 500V 13A I4-PAC	Tube	HiPerFET，PolarHT	-55°C ~ 150°C (TJ)	i4-Pac?-5	ISOPLUS i4-PAC?	Through Hole	132W	2 N-Channel (Dual)	500V	13A	270 mOhm @ 11A，10V	50nC @ 10V	2630pF @ 25V
	FMM22-06PF	IXYS	Inquiry	-	-	MOSFET 2N-CH 600V 12A I4-PAC MOQ: 1 MPQ: 1	MOSFET 2N-CH 600V 12A I4-PAC	Tube	HiPerFET，PolarHT	-55°C ~ 150°C (TJ)	i4-Pac?-5	ISOPLUS i4-PAC?	Through Hole	130W	2 N-Channel (Dual)	600V	12A	350 mOhm @ 11A，10V	58nC @ 10V	3600pF @ 25V
	APTM50H15FT1G	Microsemi Corporation	Inquiry	-	-	MOSFET 4N-CH 500V 25A SP1 MOQ: 1 MPQ: 1	MOSFET 4N-CH 500V 25A SP1	Bulk	-	-40°C ~ 150°C (TJ)	SP1	SP1	Chassis Mount	208W	4 N-Channel (H-Bridge)	500V	25A	180 mOhm @ 21A，10V	170nC @ 10V	5448pF @ 25V
	APTM60H23FT1G	Microsemi Corporation	Inquiry	-	-	MOSFET 4N-CH 600V 20A SP1 MOQ: 1 MPQ: 1	MOSFET 4N-CH 600V 20A SP1	Bulk	-	-40°C ~ 150°C (TJ)	SP1	SP1	Chassis Mount	208W	4 N-Channel (H-Bridge)	600V	20A	276 mOhm @ 17A，10V	165nC @ 10V	5316pF @ 25V
	APTM120H140FT1G	Microsemi Corporation	Inquiry	-	-	MOSFET 4N-CH 1200V 8A SP1 MOQ: 1 MPQ: 1	MOSFET 4N-CH 1200V 8A SP1	Bulk	-	-40°C ~ 150°C (TJ)	SP1	SP1	Chassis Mount	208W	4 N-Channel (H-Bridge)	1200V (1.2kV)	8A	1.68 Ohm @ 7A，10V	145nC @ 10V	3812pF @ 25V
	APTM100H80FT1G	Microsemi Corporation	Inquiry	-	-	MOSFET 4N-CH 1000V 11A SP1 MOQ: 1 MPQ: 1	MOSFET 4N-CH 1000V 11A SP1	Bulk	-	-40°C ~ 150°C (TJ)	SP1	SP1	Chassis Mount	208W	4 N-Channel (H-Bridge)	1000V (1kV)	11A	960 mOhm @ 9A，10V	150nC @ 10V	3876pF @ 25V
	APTM50A15FT1G	Microsemi Corporation	Inquiry	-	-	MOSFET 2N-CH 500V 25A SP1 MOQ: 1 MPQ: 1	MOSFET 2N-CH 500V 25A SP1	Bulk	-	-40°C ~ 150°C (TJ)	SP1	SP1	Chassis Mount	208W	2 N-Channel (Half Bridge)	500V	25A	180 mOhm @ 21A，10V	170nC @ 10V	5448pF @ 25V
	APTM60A23FT1G	Microsemi Corporation	Inquiry	-	-	MOSFET 2N-CH 600V 20A SP1 MOQ: 1 MPQ: 1	MOSFET 2N-CH 600V 20A SP1	Bulk	-	-40°C ~ 150°C (TJ)	SP1	SP1	Chassis Mount	208W	2 N-Channel (Half Bridge)	600V	20A	276 mOhm @ 17A，10V	165nC @ 10V	5316pF @ 25V
	APTM50DDA10T3G	Microsemi Corporation	Inquiry	-	-	MOSFET 2N-CH 500V 37A SP3 MOQ: 1 MPQ: 1	MOSFET 2N-CH 500V 37A SP3	Bulk	-	-40°C ~ 150°C (TJ)	SP3	SP3	Chassis Mount	312W	2 N-Channel (Dual)	500V	37A	120 mOhm @ 18.5A，10V	96nC @ 10V	4367pF @ 25V
	APTM50H10FT3G	Microsemi Corporation	Inquiry	-	-	MOSFET 4N-CH 500V 37A SP3 MOQ: 1 MPQ: 1	MOSFET 4N-CH 500V 37A SP3	Bulk	-	-40°C ~ 150°C (TJ)	SP3	SP3	Chassis Mount	312W	4 N-Channel (H-Bridge)	500V	37A	120 mOhm @ 18.5A，10V	96nC @ 10V	4367pF @ 25V
	APTM50DSK10T3G	Microsemi Corporation	Inquiry	-	-	MOSFET 2N-CH 500V 37A SP3 MOQ: 1 MPQ: 1	MOSFET 2N-CH 500V 37A SP3	Bulk	-	-40°C ~ 150°C (TJ)	SP3	SP3	Chassis Mount	312W	2 N-Channel (Dual)	500V	37A	120 mOhm @ 18.5A，10V	96nC @ 10V	4367pF @ 25V

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