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- Rds On (Max) @ Id，Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Selected conditions:
Discover 8 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Toshiba Semiconductor and Storage |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 20V/12V PS-8
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Tape & Reel (TR) | 150°C (TJ) | 8-SMD，Flat Lead | PS-8 (2.9x2.4) | 1W | N and P-Channel | Logic Level Gate | 20V，12V | 100mA，5.5A | 3 Ohm @ 10mA，4V | 9.3pF @ 3V | ||
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Toshiba Semiconductor and Storage |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 0.1A US6
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Tape & Reel (TR) | 150°C (TJ) | 6-TSSOP，SC-88，SOT-363 | US6 | 200mW | 2 N-Channel (Dual) | Standard | 20V | 100mA | 3 Ohm @ 10mA，4V | 9.3pF @ 3V | |||
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Toshiba Semiconductor and Storage |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 0.1A US6
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Cut Tape (CT) | 150°C (TJ) | 6-TSSOP，SC-88，SOT-363 | US6 | 200mW | 2 N-Channel (Dual) | Standard | 20V | 100mA | 3 Ohm @ 10mA，4V | 9.3pF @ 3V | |||
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Toshiba Semiconductor and Storage |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 0.1A US6
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- | 150°C (TJ) | 6-TSSOP，SC-88，SOT-363 | US6 | 200mW | 2 N-Channel (Dual) | Standard | 20V | 100mA | 3 Ohm @ 10mA，4V | 9.3pF @ 3V | |||
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Toshiba Semiconductor and Storage |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 20V 0.5A UF6 S
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Tape & Reel (TR) | 150°C (TJ) | 6-SMD，Flat Leads | UF6 | 500mW | N and P-Channel | Logic Level Gate | 20V | 500mA | 145 mOhm @ 250MA，4V | 268pF @ 10V | |||
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Toshiba Semiconductor and Storage |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 20V 0.5A UF6 S
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Cut Tape (CT) | 150°C (TJ) | 6-SMD，Flat Leads | UF6 | 500mW | N and P-Channel | Logic Level Gate | 20V | 500mA | 145 mOhm @ 250MA，4V | 268pF @ 10V | |||
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Toshiba Semiconductor and Storage |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 20V 0.5A UF6 S
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- | 150°C (TJ) | 6-SMD，Flat Leads | UF6 | 500mW | N and P-Channel | Logic Level Gate | 20V | 500mA | 145 mOhm @ 250MA，4V | 268pF @ 10V | |||
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Toshiba Semiconductor and Storage |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 30V 500MA UF6
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- | 150°C | 6-SMD，Flat Leads | UF6 | 500mW | N and P-Channel | Standard | 30V | 500mA (Ta) | 145 mOhm @ 500mA，4.5V，260 mOhm @ 250mA，4V | 245pF @ 10V，218pF @ 10V |
