- FET Feature:
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- Current - Continuous Drain (Id) @ 25°C:
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- Rds On (Max) @ Id,Vgs:
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- Gate Charge (Qg) (Max) @ Vgs:
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- Input Capacitance (Ciss) (Max) @ Vds:
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- Selected conditions:
Discover 2 products
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | FET Feature | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id,Vgs | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | ||
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | FET Feature | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id,Vgs | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | ||
ON Semiconductor |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET 2 N-CH 30V 6.3A/8.6A 8SO
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Standard | 6.3A,8.6A | 28 mOhm @ 6.3A,10V,13.5 mOhm @ 8.6A,10V | 9nC @ 5V,16nC @ 5V | 610pF @ 10V,1250pF @ 10V | ||||
ON Semiconductor |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET 2 N-CH 30V 6.5A/7.9A 8SO
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Logic Level Gate | 6.5A,7.9A | 29 mOhm @ 6.5A,10V,20 mOhm @ 7.9A,10V | 9nC @ 5V,8nC @ 5V | 720pF @ 10V,550pF @ 10V |