Discover 12 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Package / Case Supplier Device Package Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds
BSD235CH6327XTSA1
Infineon Technologies
21,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V SOT363
Tape & Reel (TR) OptiMOS -55°C ~ 150°C (TJ) 6-VSSOP,SC-88,SOT-363 PG-SOT363-6 500mW N and P-Channel Logic Level Gate 20V 950mA,530mA 350 mOhm @ 950mA,4.5V 1.2V @ 1.6μA 47pF @ 10V
BSD235CH6327XTSA1
Infineon Technologies
22,363
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V SOT363
Cut Tape (CT) OptiMOS -55°C ~ 150°C (TJ) 6-VSSOP,SC-88,SOT-363 PG-SOT363-6 500mW N and P-Channel Logic Level Gate 20V 950mA,530mA 350 mOhm @ 950mA,4.5V 1.2V @ 1.6μA 47pF @ 10V
BSD235CH6327XTSA1
Infineon Technologies
22,363
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V SOT363
- OptiMOS -55°C ~ 150°C (TJ) 6-VSSOP,SC-88,SOT-363 PG-SOT363-6 500mW N and P-Channel Logic Level Gate 20V 950mA,530mA 350 mOhm @ 950mA,4.5V 1.2V @ 1.6μA 47pF @ 10V
BSD235C L6327
Infineon Technologies
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V SOT-363
Tape & Reel (TR) OptiMOS -55°C ~ 150°C (TJ) 6-VSSOP,SC-88,SOT-363 PG-SOT363-6 500mW N and P-Channel Logic Level Gate 20V 950mA,530mA 350 mOhm @ 950mA,4.5V 1.2V @ 1.6μA 47pF @ 10V
BSD235C L6327
Infineon Technologies
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V SOT-363
Cut Tape (CT) OptiMOS -55°C ~ 150°C (TJ) 6-VSSOP,SC-88,SOT-363 PG-SOT363-6 500mW N and P-Channel Logic Level Gate 20V 950mA,530mA 350 mOhm @ 950mA,4.5V 1.2V @ 1.6μA 47pF @ 10V
BSD235C L6327
Infineon Technologies
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V SOT-363
- OptiMOS -55°C ~ 150°C (TJ) 6-VSSOP,SC-88,SOT-363 PG-SOT363-6 500mW N and P-Channel Logic Level Gate 20V 950mA,530mA 350 mOhm @ 950mA,4.5V 1.2V @ 1.6μA 47pF @ 10V
SSM6N35AFE,LF
Toshiba Semiconductor and Storage
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2 N-CHANNEL 20V 250MA ES6
- - 150°C SOT-563,SOT-666 ES6 250mW 2 N-Channel (Dual) Standard 2000V (2kV) 250mA (Ta) 1.1 Ohm @ 150mA,4.5V 1V @ 100μA 36pF @ 10V
SSM6N35AFE,LF
Toshiba Semiconductor and Storage
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2 N-CHANNEL 20V 250MA ES6
- - 150°C SOT-563,SOT-666 ES6 250mW 2 N-Channel (Dual) Standard 2000V (2kV) 250mA (Ta) 1.1 Ohm @ 150mA,4.5V 1V @ 100μA 36pF @ 10V
SSM6N35AFE,LF
Toshiba Semiconductor and Storage
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2 N-CHANNEL 20V 250MA ES6
- - 150°C SOT-563,SOT-666 ES6 250mW 2 N-Channel (Dual) Standard 2000V (2kV) 250mA (Ta) 1.1 Ohm @ 150mA,4.5V 1V @ 100μA 36pF @ 10V
SSM6N35AFU,LF
Toshiba Semiconductor and Storage
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2 N-CHANNEL 20V 250MA US6
- - 150°C 6-TSSOP,SC-88,SOT-363 US6 285mW (Ta) 2 N-Channel (Dual) Standard 20V 250mA (Ta) 1.1 Ohm @ 150mA,4.5V 1V @ 100μA 36pF @ 10V
SSM6N35AFU,LF
Toshiba Semiconductor and Storage
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2 N-CHANNEL 20V 250MA US6
- - 150°C 6-TSSOP,SC-88,SOT-363 US6 285mW (Ta) 2 N-Channel (Dual) Standard 20V 250mA (Ta) 1.1 Ohm @ 150mA,4.5V 1V @ 100μA 36pF @ 10V
SSM6N35AFU,LF
Toshiba Semiconductor and Storage
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2 N-CHANNEL 20V 250MA US6
- - 150°C 6-TSSOP,SC-88,SOT-363 US6 285mW (Ta) 2 N-Channel (Dual) Standard 20V 250mA (Ta) 1.1 Ohm @ 150mA,4.5V 1V @ 100μA 36pF @ 10V