FETs, MOSFETs - Arrays - Zui Ai Technology（Taiwan）Company.

Packaging：

Series：

Operating Temperature：

Package / Case：

Supplier Device Package：

Mounting Type：

Power - Max：

FET Type：

FET Feature：

Drain to Source Voltage (Vdss)：

Current - Continuous Drain (Id) @ 25°C：

Rds On (Max) @ Id，Vgs：

Vgs(th) (Max) @ Id：

Input Capacitance (Ciss) (Max) @ Vds：

Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Operating Temperature	Package / Case	Supplier Device Package	Mounting Type	Power - Max	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds
Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Operating Temperature	Package / Case	Supplier Device Package	Mounting Type	Power - Max	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds
	DMG6602SVT-7	Diodes Incorporated	51,000	3 days	-	MOSFET N/P-CH 30V TSOT23-6 MOQ: 1 MPQ: 1	MOSFET N/P-CH 30V TSOT23-6	Tape & Reel (TR)	-	-55°C ~ 150°C (TJ)	SOT-23-6 Thin，TSOT-23-6	TSOT-23-6	Surface Mount	840mW	N and P-Channel	Logic Level Gate	30V	3.4A，2.8A	60 mOhm @ 3.1A，10V	2.3V @ 250μA	400pF @ 15V
	DMG6602SVT-7	Diodes Incorporated	53,816	3 days	-	MOSFET N/P-CH 30V TSOT23-6 MOQ: 1 MPQ: 1	MOSFET N/P-CH 30V TSOT23-6	Cut Tape (CT)	-	-55°C ~ 150°C (TJ)	SOT-23-6 Thin，TSOT-23-6	TSOT-23-6	Surface Mount	840mW	N and P-Channel	Logic Level Gate	30V	3.4A，2.8A	60 mOhm @ 3.1A，10V	2.3V @ 250μA	400pF @ 15V
	DMG6602SVT-7	Diodes Incorporated	53,816	3 days	-	MOSFET N/P-CH 30V TSOT23-6 MOQ: 1 MPQ: 1	MOSFET N/P-CH 30V TSOT23-6	-	-	-55°C ~ 150°C (TJ)	SOT-23-6 Thin，TSOT-23-6	TSOT-23-6	Surface Mount	840mW	N and P-Channel	Logic Level Gate	30V	3.4A，2.8A	60 mOhm @ 3.1A，10V	2.3V @ 250μA	400pF @ 15V
	FDS8984	ON Semiconductor	5,000	3 days	-	MOSFET 2N-CH 30V 7A 8-SOIC MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 7A 8-SOIC	Tape & Reel (TR)	PowerTrench	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	Surface Mount	1.6W	2 N-Channel (Dual)	Logic Level Gate	30V	7A	23 mOhm @ 7A，10V	2.5V @ 250μA	635pF @ 15V
	FDS8984	ON Semiconductor	5,624	3 days	-	MOSFET 2N-CH 30V 7A 8-SOIC MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 7A 8-SOIC	Cut Tape (CT)	PowerTrench	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	Surface Mount	1.6W	2 N-Channel (Dual)	Logic Level Gate	30V	7A	23 mOhm @ 7A，10V	2.5V @ 250μA	635pF @ 15V
	FDS8984	ON Semiconductor	5,624	3 days	-	MOSFET 2N-CH 30V 7A 8-SOIC MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 7A 8-SOIC	-	PowerTrench	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	Surface Mount	1.6W	2 N-Channel (Dual)	Logic Level Gate	30V	7A	23 mOhm @ 7A，10V	2.5V @ 250μA	635pF @ 15V
	DMG6602SVTQ-7	Diodes Incorporated	9,000	3 days	-	MOSFET N/P-CH 30V TSOT26 MOQ: 1 MPQ: 1	MOSFET N/P-CH 30V TSOT26	Tape & Reel (TR)	-	-55°C ~ 150°C (TJ)	SOT-23-6 Thin，TSOT-23-6	TSOT-26	Surface Mount	840mW	N and P-Channel	Logic Level Gate	30V	3.4A，2.8A	60 mOhm @ 3.1A，10V	2.3V @ 250μA	400pF @ 15V
	DMG6602SVTQ-7	Diodes Incorporated	9,099	3 days	-	MOSFET N/P-CH 30V TSOT26 MOQ: 1 MPQ: 1	MOSFET N/P-CH 30V TSOT26	Cut Tape (CT)	-	-55°C ~ 150°C (TJ)	SOT-23-6 Thin，TSOT-23-6	TSOT-26	Surface Mount	840mW	N and P-Channel	Logic Level Gate	30V	3.4A，2.8A	60 mOhm @ 3.1A，10V	2.3V @ 250μA	400pF @ 15V
	DMG6602SVTQ-7	Diodes Incorporated	9,099	3 days	-	MOSFET N/P-CH 30V TSOT26 MOQ: 1 MPQ: 1	MOSFET N/P-CH 30V TSOT26	-	-	-55°C ~ 150°C (TJ)	SOT-23-6 Thin，TSOT-23-6	TSOT-26	Surface Mount	840mW	N and P-Channel	Logic Level Gate	30V	3.4A，2.8A	60 mOhm @ 3.1A，10V	2.3V @ 250μA	400pF @ 15V
	SIA931DJ-T1-GE3	Vishay Siliconix	12,000	3 days	-	MOSFET 2P-CH 30V 4.5A SC70-6L MOQ: 1 MPQ: 1	MOSFET 2P-CH 30V 4.5A SC70-6L	Tape & Reel (TR)	TrenchFET	-55°C ~ 150°C (TJ)	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual	Surface Mount	7.8W	2 P-Channel (Dual)	Logic Level Gate	30V	4.5A	65 mOhm @ 3A，10V	2.2V @ 250μA	445pF @ 15V
	SIA931DJ-T1-GE3	Vishay Siliconix	14,276	3 days	-	MOSFET 2P-CH 30V 4.5A SC70-6L MOQ: 1 MPQ: 1	MOSFET 2P-CH 30V 4.5A SC70-6L	Cut Tape (CT)	TrenchFET	-55°C ~ 150°C (TJ)	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual	Surface Mount	7.8W	2 P-Channel (Dual)	Logic Level Gate	30V	4.5A	65 mOhm @ 3A，10V	2.2V @ 250μA	445pF @ 15V
	SIA931DJ-T1-GE3	Vishay Siliconix	14,276	3 days	-	MOSFET 2P-CH 30V 4.5A SC70-6L MOQ: 1 MPQ: 1	MOSFET 2P-CH 30V 4.5A SC70-6L	-	TrenchFET	-55°C ~ 150°C (TJ)	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual	Surface Mount	7.8W	2 P-Channel (Dual)	Logic Level Gate	30V	4.5A	65 mOhm @ 3A，10V	2.2V @ 250μA	445pF @ 15V
	NDS9948	ON Semiconductor	7,500	3 days	-	MOSFET 2P-CH 60V 2.3A 8-SOIC MOQ: 1 MPQ: 1	MOSFET 2P-CH 60V 2.3A 8-SOIC	Tape & Reel (TR)	PowerTrench	-55°C ~ 175°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	Surface Mount	900mW	2 P-Channel (Dual)	Logic Level Gate	60V	2.3A	250 mOhm @ 2.3A，10V	3V @ 250μA	394pF @ 30V
	NDS9948	ON Semiconductor	8,268	3 days	-	MOSFET 2P-CH 60V 2.3A 8-SOIC MOQ: 1 MPQ: 1	MOSFET 2P-CH 60V 2.3A 8-SOIC	Cut Tape (CT)	PowerTrench	-55°C ~ 175°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	Surface Mount	900mW	2 P-Channel (Dual)	Logic Level Gate	60V	2.3A	250 mOhm @ 2.3A，10V	3V @ 250μA	394pF @ 30V
	NDS9948	ON Semiconductor	8,268	3 days	-	MOSFET 2P-CH 60V 2.3A 8-SOIC MOQ: 1 MPQ: 1	MOSFET 2P-CH 60V 2.3A 8-SOIC	-	PowerTrench	-55°C ~ 175°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	Surface Mount	900mW	2 P-Channel (Dual)	Logic Level Gate	60V	2.3A	250 mOhm @ 2.3A，10V	3V @ 250μA	394pF @ 30V
	SI7228DN-T1-GE3	Vishay Siliconix	3,000	3 days	-	MOSFET 2N-CH 30V 26A PPAK 1212-8 MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 26A PPAK 1212-8	Tape & Reel (TR)	TrenchFET	-55°C ~ 150°C (TJ)	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual	Surface Mount	23W	2 N-Channel (Dual)	Standard	30V	26A	20 mOhm @ 8.8A，10V	2.5V @ 250μA	480pF @ 15V
	SI7228DN-T1-GE3	Vishay Siliconix	4,358	3 days	-	MOSFET 2N-CH 30V 26A PPAK 1212-8 MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 26A PPAK 1212-8	Cut Tape (CT)	TrenchFET	-55°C ~ 150°C (TJ)	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual	Surface Mount	23W	2 N-Channel (Dual)	Standard	30V	26A	20 mOhm @ 8.8A，10V	2.5V @ 250μA	480pF @ 15V
	SI7228DN-T1-GE3	Vishay Siliconix	4,358	3 days	-	MOSFET 2N-CH 30V 26A PPAK 1212-8 MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 26A PPAK 1212-8	-	TrenchFET	-55°C ~ 150°C (TJ)	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual	Surface Mount	23W	2 N-Channel (Dual)	Standard	30V	26A	20 mOhm @ 8.8A，10V	2.5V @ 250μA	480pF @ 15V
	QS8J4TR	ROHM Semiconductor	3,000	3 days	-	MOSFET 2P-CH 30V 4A TSMT8 MOQ: 1 MPQ: 1	MOSFET 2P-CH 30V 4A TSMT8	Tape & Reel (TR)	-	150°C (TJ)	8-SMD，Flat Lead	TSMT8	Surface Mount	550mW	2 P-Channel (Dual)	Logic Level Gate	30V	4A	56 mOhm @ 4A，10V	2.5V @ 1mA	800pF @ 10V
	QS8J4TR	ROHM Semiconductor	5,961	3 days	-	MOSFET 2P-CH 30V 4A TSMT8 MOQ: 1 MPQ: 1	MOSFET 2P-CH 30V 4A TSMT8	Cut Tape (CT)	-	150°C (TJ)	8-SMD，Flat Lead	TSMT8	Surface Mount	550mW	2 P-Channel (Dual)	Logic Level Gate	30V	4A	56 mOhm @ 4A，10V	2.5V @ 1mA	800pF @ 10V

Sent successfully!