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- Current - Continuous Drain (Id) @ 25°C：
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Discover 28 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | |
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ON Semiconductor |
9,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 25V 0.22A SSOT6
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Tape & Reel (TR) | - | SOT-23-6 Thin，TSOT-23-6 | SuperSOT?-6 | 700mW | 2 N-Channel (Dual) | Logic Level Gate | 25V | 220mA | 4 Ohm @ 400mA，4.5V | 1.5V @ 250μA | 9.5pF @ 10V | ||
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ON Semiconductor |
14,182
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 25V 0.22A SSOT6
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Cut Tape (CT) | - | SOT-23-6 Thin，TSOT-23-6 | SuperSOT?-6 | 700mW | 2 N-Channel (Dual) | Logic Level Gate | 25V | 220mA | 4 Ohm @ 400mA，4.5V | 1.5V @ 250μA | 9.5pF @ 10V | ||
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ON Semiconductor |
14,182
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 25V 0.22A SSOT6
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- | - | SOT-23-6 Thin，TSOT-23-6 | SuperSOT?-6 | 700mW | 2 N-Channel (Dual) | Logic Level Gate | 25V | 220mA | 4 Ohm @ 400mA，4.5V | 1.5V @ 250μA | 9.5pF @ 10V | ||
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Nexperia USA Inc. |
20,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 0.6A 6DFN
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Tape & Reel (TR) | TrenchFET | 6-XFDFN Exposed Pad | 6-DFN (1.1x1) | 265mW | 2 N-Channel (Dual) | Logic Level Gate | 20V | 600mA | 620 mOhm @ 600mA，4.5V | 950mV @ 250μA | 21.3pF @ 10V | ||
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Nexperia USA Inc. |
25,551
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 0.6A 6DFN
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Cut Tape (CT) | TrenchFET | 6-XFDFN Exposed Pad | 6-DFN (1.1x1) | 265mW | 2 N-Channel (Dual) | Logic Level Gate | 20V | 600mA | 620 mOhm @ 600mA，4.5V | 950mV @ 250μA | 21.3pF @ 10V | ||
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Nexperia USA Inc. |
25,551
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 0.6A 6DFN
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- | TrenchFET | 6-XFDFN Exposed Pad | 6-DFN (1.1x1) | 265mW | 2 N-Channel (Dual) | Logic Level Gate | 20V | 600mA | 620 mOhm @ 600mA，4.5V | 950mV @ 250μA | 21.3pF @ 10V | ||
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Nexperia USA Inc. |
10,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 20V 0.6A/0.5A 6DFN
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Tape & Reel (TR) | TrenchFET | 6-XFDFN Exposed Pad | 6-DFN (1.1x1) | 265mW | N and P-Channel Complementary | Logic Level Gate | 20V | 600mA，500mA | 620 mOhm @ 600mA，4.5V | 950mV @ 250μA | 21.3pF @ 10V | ||
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Nexperia USA Inc. |
10,370
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 20V 0.6A/0.5A 6DFN
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Cut Tape (CT) | TrenchFET | 6-XFDFN Exposed Pad | 6-DFN (1.1x1) | 265mW | N and P-Channel Complementary | Logic Level Gate | 20V | 600mA，500mA | 620 mOhm @ 600mA，4.5V | 950mV @ 250μA | 21.3pF @ 10V | ||
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Nexperia USA Inc. |
10,370
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 20V 0.6A/0.5A 6DFN
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- | TrenchFET | 6-XFDFN Exposed Pad | 6-DFN (1.1x1) | 265mW | N and P-Channel Complementary | Logic Level Gate | 20V | 600mA，500mA | 620 mOhm @ 600mA，4.5V | 950mV @ 250μA | 21.3pF @ 10V | ||
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Nexperia USA Inc. |
5,000
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3 days |
-
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MOQ: 1 MPQ: 1
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20 V，DUAL N-CHANNEL TRENCH MOSF
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Tape & Reel (TR) | - | 6-XFDFN Exposed Pad | DFN1010B-6 | 380mW | 2 N-Channel (Dual) | Standard | 20V | 600mA | 620 mOhm @ 600mA，4.5V | 950mV @ 250μA | 21.3pF @ 10V | ||
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Nexperia USA Inc. |
8,575
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3 days |
-
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MOQ: 1 MPQ: 1
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20 V，DUAL N-CHANNEL TRENCH MOSF
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Cut Tape (CT) | - | 6-XFDFN Exposed Pad | DFN1010B-6 | 380mW | 2 N-Channel (Dual) | Standard | 20V | 600mA | 620 mOhm @ 600mA，4.5V | 950mV @ 250μA | 21.3pF @ 10V | ||
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Nexperia USA Inc. |
8,575
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3 days |
-
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MOQ: 1 MPQ: 1
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20 V，DUAL N-CHANNEL TRENCH MOSF
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- | - | 6-XFDFN Exposed Pad | DFN1010B-6 | 380mW | 2 N-Channel (Dual) | Standard | 20V | 600mA | 620 mOhm @ 600mA，4.5V | 950mV @ 250μA | 21.3pF @ 10V | ||
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Nexperia USA Inc. |
20,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 0.6A 6DFN
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Tape & Reel (TR) | - | 6-XFDFN Exposed Pad | DFN1010B-6 | 265mW | 2 N-Channel (Dual) | Logic Level Gate | 20V | 600mA | 620 mOhm @ 600mA，4.5V | 950mV @ 250μA | 21.3pF @ 10V | ||
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Nexperia USA Inc. |
23,393
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 0.6A 6DFN
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Cut Tape (CT) | - | 6-XFDFN Exposed Pad | DFN1010B-6 | 265mW | 2 N-Channel (Dual) | Logic Level Gate | 20V | 600mA | 620 mOhm @ 600mA，4.5V | 950mV @ 250μA | 21.3pF @ 10V | ||
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Nexperia USA Inc. |
23,393
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 0.6A 6DFN
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- | - | 6-XFDFN Exposed Pad | DFN1010B-6 | 265mW | 2 N-Channel (Dual) | Logic Level Gate | 20V | 600mA | 620 mOhm @ 600mA，4.5V | 950mV @ 250μA | 21.3pF @ 10V | ||
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Nexperia USA Inc. |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 60V 0.32A 6TSSOP
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Tape & Reel (TR) | Automotive，AEC-Q101，TrenchMOS | 6-TSSOP，SC-88，SOT-363 | 6-TSSOP | 445mW | 2 N-Channel (Dual) | Logic Level Gate | 60V | 320mA | 1.6 Ohm @ 320mA，10V | 1.6V @ 250μA | 56pF @ 10V | ||
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Nexperia USA Inc. |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 60V 0.32A 6TSSOP
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Cut Tape (CT) | Automotive，AEC-Q101，TrenchMOS | 6-TSSOP，SC-88，SOT-363 | 6-TSSOP | 445mW | 2 N-Channel (Dual) | Logic Level Gate | 60V | 320mA | 1.6 Ohm @ 320mA，10V | 1.6V @ 250μA | 56pF @ 10V | ||
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Nexperia USA Inc. |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 60V 0.32A 6TSSOP
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- | Automotive，AEC-Q101，TrenchMOS | 6-TSSOP，SC-88，SOT-363 | 6-TSSOP | 445mW | 2 N-Channel (Dual) | Logic Level Gate | 60V | 320mA | 1.6 Ohm @ 320mA，10V | 1.6V @ 250μA | 56pF @ 10V | ||
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Nexperia USA Inc. |
Inquiry
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-
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MOQ: 1 MPQ: 1
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20 V，COMPLEMENTARY N/P-CHANNEL
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Tape & Reel (TR) | - | 6-XFDFN Exposed Pad | DFN1010B-6 | 380mW | N and P-Channel Complementary | Standard | 20V | 600mA | 620 mOhm @ 600mA，4.5V | 950mV @ 250μA | 21.3pF @ 10V | ||
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Nexperia USA Inc. |
11
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3 days |
-
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MOQ: 1 MPQ: 1
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20 V，COMPLEMENTARY N/P-CHANNEL
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Cut Tape (CT) | - | 6-XFDFN Exposed Pad | DFN1010B-6 | 380mW | N and P-Channel Complementary | Standard | 20V | 600mA | 620 mOhm @ 600mA，4.5V | 950mV @ 250μA | 21.3pF @ 10V |
