Drain to Source Voltage (Vdss):
Discover 91 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Package / Case Supplier Device Package Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds
SIA922EDJ-T1-GE3
Vishay Siliconix
3,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 4.5A SC70-6
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) PowerPAK? SC-70-6 Dual PowerPAK? SC-70-6 Dual 7.8W 2 N-Channel (Dual) Logic Level Gate 30V 4.5A 64 mOhm @ 3A,4.5V 1.4V @ 250μA -
SIA922EDJ-T1-GE3
Vishay Siliconix
4,812
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 4.5A SC70-6
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) PowerPAK? SC-70-6 Dual PowerPAK? SC-70-6 Dual 7.8W 2 N-Channel (Dual) Logic Level Gate 30V 4.5A 64 mOhm @ 3A,4.5V 1.4V @ 250μA -
SIA922EDJ-T1-GE3
Vishay Siliconix
4,812
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 4.5A SC70-6
- TrenchFET -55°C ~ 150°C (TJ) PowerPAK? SC-70-6 Dual PowerPAK? SC-70-6 Dual 7.8W 2 N-Channel (Dual) Logic Level Gate 30V 4.5A 64 mOhm @ 3A,4.5V 1.4V @ 250μA -
SIA906EDJ-T1-GE3
Vishay Siliconix
30,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 4.5A SC70-6
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) PowerPAK? SC-70-6 Dual PowerPAK? SC-70-6 Dual 7.8W 2 N-Channel (Dual) Logic Level Gate 20V 4.5A 46 mOhm @ 3.9A,4.5V 1.4V @ 250μA 350pF @ 10V
SIA906EDJ-T1-GE3
Vishay Siliconix
32,509
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 4.5A SC70-6
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) PowerPAK? SC-70-6 Dual PowerPAK? SC-70-6 Dual 7.8W 2 N-Channel (Dual) Logic Level Gate 20V 4.5A 46 mOhm @ 3.9A,4.5V 1.4V @ 250μA 350pF @ 10V
SIA906EDJ-T1-GE3
Vishay Siliconix
32,509
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 4.5A SC70-6
- TrenchFET -55°C ~ 150°C (TJ) PowerPAK? SC-70-6 Dual PowerPAK? SC-70-6 Dual 7.8W 2 N-Channel (Dual) Logic Level Gate 20V 4.5A 46 mOhm @ 3.9A,4.5V 1.4V @ 250μA 350pF @ 10V
AO4882
Alpha & Omega Semiconductor Inc.
18,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 40V 8A 8SOIC
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC 2W 2 N-Channel (Dual) Logic Level Gate 40V 8A 19 mOhm @ 8A,10V 2.4V @ 250μA 415pF @ 20V
AO4882
Alpha & Omega Semiconductor Inc.
19,600
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 40V 8A 8SOIC
Cut Tape (CT) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC 2W 2 N-Channel (Dual) Logic Level Gate 40V 8A 19 mOhm @ 8A,10V 2.4V @ 250μA 415pF @ 20V
AO4882
Alpha & Omega Semiconductor Inc.
19,600
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 40V 8A 8SOIC
- - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC 2W 2 N-Channel (Dual) Logic Level Gate 40V 8A 19 mOhm @ 8A,10V 2.4V @ 250μA 415pF @ 20V
IRF7509TRPBF
Infineon Technologies
40,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 2.7A/2A MICRO8
Tape & Reel (TR) HEXFET -55°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Micro8? 1.25W N and P-Channel Logic Level Gate 30V 2.7A,2A 110 mOhm @ 1.7A,10V 1V @ 250μA 210pF @ 25V
IRF7509TRPBF
Infineon Technologies
43,286
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 2.7A/2A MICRO8
Cut Tape (CT) HEXFET -55°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Micro8? 1.25W N and P-Channel Logic Level Gate 30V 2.7A,2A 110 mOhm @ 1.7A,10V 1V @ 250μA 210pF @ 25V
IRF7509TRPBF
Infineon Technologies
43,286
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 2.7A/2A MICRO8
- HEXFET -55°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Micro8? 1.25W N and P-Channel Logic Level Gate 30V 2.7A,2A 110 mOhm @ 1.7A,10V 1V @ 250μA 210pF @ 25V
FDS8958B
ON Semiconductor
5,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 8SOIC
Tape & Reel (TR) PowerTrench -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 900mW N and P-Channel Logic Level Gate 30V 6.4A,4.5A 26 mOhm @ 6.4A,10V 3V @ 250μA 540pF @ 15V
FDS8958B
ON Semiconductor
6,906
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 8SOIC
Cut Tape (CT) PowerTrench -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 900mW N and P-Channel Logic Level Gate 30V 6.4A,4.5A 26 mOhm @ 6.4A,10V 3V @ 250μA 540pF @ 15V
FDS8958B
ON Semiconductor
6,906
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 8SOIC
- PowerTrench -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 900mW N and P-Channel Logic Level Gate 30V 6.4A,4.5A 26 mOhm @ 6.4A,10V 3V @ 250μA 540pF @ 15V
SQ9945BEY-T1_GE3
Vishay Siliconix
2,500
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 5.4A
Tape & Reel (TR) TrenchFET -55°C ~ 175°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 4W 2 N-Channel (Dual) Logic Level Gate 60V 5.4A 64 mOhm @ 3.4A,10V 2.5V @ 250μA 470pF @ 25V
SQ9945BEY-T1_GE3
Vishay Siliconix
4,850
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 5.4A
Cut Tape (CT) TrenchFET -55°C ~ 175°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 4W 2 N-Channel (Dual) Logic Level Gate 60V 5.4A 64 mOhm @ 3.4A,10V 2.5V @ 250μA 470pF @ 25V
SQ9945BEY-T1_GE3
Vishay Siliconix
4,850
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 5.4A
- TrenchFET -55°C ~ 175°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 4W 2 N-Channel (Dual) Logic Level Gate 60V 5.4A 64 mOhm @ 3.4A,10V 2.5V @ 250μA 470pF @ 25V
MCMNP517-TP
Micro Commercial Co
12,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 12V 6A/4.1A
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 6-VDFN Exposed Pad DFN2020-6U - N and P-Channel Standard 12V 6A,4.1A 24 mOhm @ 6A,10V 1V @ 250μA 630pF @ 10V
MCMNP517-TP
Micro Commercial Co
14,165
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 12V 6A/4.1A
Cut Tape (CT) - -55°C ~ 150°C (TJ) 6-VDFN Exposed Pad DFN2020-6U - N and P-Channel Standard 12V 6A,4.1A 24 mOhm @ 6A,10V 1V @ 250μA 630pF @ 10V