FETs, MOSFETs - Arrays - Zui Ai Technology（Taiwan）Company.

Packaging：

Series：

Operating Temperature：

Package / Case：

Supplier Device Package：

Mounting Type：

Power - Max：

FET Type：

FET Feature：

Drain to Source Voltage (Vdss)：

Current - Continuous Drain (Id) @ 25°C：

Rds On (Max) @ Id，Vgs：

Vgs(th) (Max) @ Id：

Input Capacitance (Ciss) (Max) @ Vds：

Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Operating Temperature	Package / Case	Supplier Device Package	Mounting Type	Power - Max	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds
Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Operating Temperature	Package / Case	Supplier Device Package	Mounting Type	Power - Max	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds
	IRF9389TRPBF	Infineon Technologies	4,000	3 days	-	MOSFET N/P-CH 30V 6.8A/4.6A 8-SO MOQ: 1 MPQ: 1	MOSFET N/P-CH 30V 6.8A/4.6A 8-SO	Tape & Reel (TR)	HEXFET	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	Surface Mount	2W	N and P-Channel	Logic Level Gate	30V	6.8A，4.6A	27 mOhm @ 6.8A，10V	2.3V @ 10μA	398pF @ 15V
	IRF9389TRPBF	Infineon Technologies	7,900	3 days	-	MOSFET N/P-CH 30V 6.8A/4.6A 8-SO MOQ: 1 MPQ: 1	MOSFET N/P-CH 30V 6.8A/4.6A 8-SO	Cut Tape (CT)	HEXFET	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	Surface Mount	2W	N and P-Channel	Logic Level Gate	30V	6.8A，4.6A	27 mOhm @ 6.8A，10V	2.3V @ 10μA	398pF @ 15V
	IRF9389TRPBF	Infineon Technologies	7,900	3 days	-	MOSFET N/P-CH 30V 6.8A/4.6A 8-SO MOQ: 1 MPQ: 1	MOSFET N/P-CH 30V 6.8A/4.6A 8-SO	-	HEXFET	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	Surface Mount	2W	N and P-Channel	Logic Level Gate	30V	6.8A，4.6A	27 mOhm @ 6.8A，10V	2.3V @ 10μA	398pF @ 15V
	IRF9952TRPBF	Infineon Technologies	8,000	3 days	-	MOSFET N/P-CH 30V 8-SOIC MOQ: 1 MPQ: 1	MOSFET N/P-CH 30V 8-SOIC	Tape & Reel (TR)	HEXFET	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	Surface Mount	2W	N and P-Channel	Logic Level Gate	30V	3.5A，2.3A	100 mOhm @ 2.2A，10V	1V @ 250μA	190pF @ 15V
	IRF9952TRPBF	Infineon Technologies	10,888	3 days	-	MOSFET N/P-CH 30V 8-SOIC MOQ: 1 MPQ: 1	MOSFET N/P-CH 30V 8-SOIC	Cut Tape (CT)	HEXFET	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	Surface Mount	2W	N and P-Channel	Logic Level Gate	30V	3.5A，2.3A	100 mOhm @ 2.2A，10V	1V @ 250μA	190pF @ 15V
	IRF9952TRPBF	Infineon Technologies	10,888	3 days	-	MOSFET N/P-CH 30V 8-SOIC MOQ: 1 MPQ: 1	MOSFET N/P-CH 30V 8-SOIC	-	HEXFET	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	Surface Mount	2W	N and P-Channel	Logic Level Gate	30V	3.5A，2.3A	100 mOhm @ 2.2A，10V	1V @ 250μA	190pF @ 15V
	SI7501DN-T1-GE3	Vishay Siliconix	632	3 days	-	MOSFET N/P-CH 30V 5.4A 1212-8 MOQ: 1 MPQ: 1	MOSFET N/P-CH 30V 5.4A 1212-8	Cut Tape (CT)	TrenchFET	-55°C ~ 150°C (TJ)	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual	Surface Mount	1.6W	N and P-Channel，Common Drain	Logic Level Gate	30V	5.4A，4.5A	35 mOhm @ 7.7A，10V	3V @ 250μA	-
	SI7501DN-T1-GE3	Vishay Siliconix	632	3 days	-	MOSFET N/P-CH 30V 5.4A 1212-8 MOQ: 1 MPQ: 1	MOSFET N/P-CH 30V 5.4A 1212-8	-	TrenchFET	-55°C ~ 150°C (TJ)	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual	Surface Mount	1.6W	N and P-Channel，Common Drain	Logic Level Gate	30V	5.4A，4.5A	35 mOhm @ 7.7A，10V	3V @ 250μA	-
	FDMS9620S	ON Semiconductor	Inquiry	-	-	MOSFET 2N-CH 30V 7.5A/10A PWR56 MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 7.5A/10A PWR56	Tape & Reel (TR)	PowerTrench	-55°C ~ 150°C (TJ)	8-PowerWDFN	8-MLP (5x6)，Power56	Surface Mount	1W	2 N-Channel (Dual)	Logic Level Gate	30V	7.5A，10A	21.5 mOhm @ 7.5A，10V	3V @ 250μA	665pF @ 15V
	FDMS9620S	ON Semiconductor	Inquiry	-	-	MOSFET 2N-CH 30V 7.5A/10A PWR56 MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 7.5A/10A PWR56	Cut Tape (CT)	PowerTrench	-55°C ~ 150°C (TJ)	8-PowerWDFN	8-MLP (5x6)，Power56	Surface Mount	1W	2 N-Channel (Dual)	Logic Level Gate	30V	7.5A，10A	21.5 mOhm @ 7.5A，10V	3V @ 250μA	665pF @ 15V
	FDMS9620S	ON Semiconductor	Inquiry	-	-	MOSFET 2N-CH 30V 7.5A/10A PWR56 MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 7.5A/10A PWR56	-	PowerTrench	-55°C ~ 150°C (TJ)	8-PowerWDFN	8-MLP (5x6)，Power56	Surface Mount	1W	2 N-Channel (Dual)	Logic Level Gate	30V	7.5A，10A	21.5 mOhm @ 7.5A，10V	3V @ 250μA	665pF @ 15V
	IRF9956TRPBF	Infineon Technologies	Inquiry	-	-	MOSFET 2N-CH 30V 3.5A 8-SOIC MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 3.5A 8-SOIC	Tape & Reel (TR)	HEXFET	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	Surface Mount	2W	2 N-Channel (Dual)	Logic Level Gate	30V	3.5A	100 mOhm @ 2.2A，10V	1V @ 250μA	190pF @ 15V
	AUIRF9952QTR	Infineon Technologies	Inquiry	-	-	MOSFET N/P-CH 30V 3.5A/2.3A 8SO MOQ: 1 MPQ: 1	MOSFET N/P-CH 30V 3.5A/2.3A 8SO	Tape & Reel (TR)	HEXFET	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	Surface Mount	2W	N and P-Channel	Logic Level Gate	30V	3.5A，2.3A	100 mOhm @ 2.2A，10V	3V @ 250μA	190pF @ 15V
	IRF9952	Infineon Technologies	Inquiry	-	-	MOSFET N/P-CH 30V 8-SOIC MOQ: 1 MPQ: 1	MOSFET N/P-CH 30V 8-SOIC	Tube	HEXFET	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	Surface Mount	2W	N and P-Channel	Logic Level Gate	30V	3.5A，2.3A	100 mOhm @ 2.2A，10V	1V @ 250μA	190pF @ 15V
	IRF9956	Infineon Technologies	Inquiry	-	-	MOSFET 2N-CH 30V 3.5A 8-SOIC MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 3.5A 8-SOIC	Tube	HEXFET	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	Surface Mount	2W	2 N-Channel (Dual)	Logic Level Gate	30V	3.5A	100 mOhm @ 2.2A，10V	1V @ 250μA	190pF @ 15V
	IRF9952TR	Infineon Technologies	Inquiry	-	-	MOSFET N/P-CH 30V 8-SOIC MOQ: 1 MPQ: 1	MOSFET N/P-CH 30V 8-SOIC	Tape & Reel (TR)	HEXFET	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	Surface Mount	2W	N and P-Channel	Logic Level Gate	30V	3.5A，2.3A	100 mOhm @ 2.2A，10V	1V @ 250μA	190pF @ 15V
	IRF9956TR	Infineon Technologies	Inquiry	-	-	MOSFET 2N-CH 30V 3.5A 8-SOIC MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 3.5A 8-SOIC	Tape & Reel (TR)	HEXFET	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	Surface Mount	2W	2 N-Channel (Dual)	Logic Level Gate	30V	3.5A	100 mOhm @ 2.2A，10V	1V @ 250μA	190pF @ 15V
	IRF9952PBF	Infineon Technologies	Inquiry	-	-	MOSFET N/P-CH 30V 8-SOIC MOQ: 1 MPQ: 1	MOSFET N/P-CH 30V 8-SOIC	Tube	HEXFET	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	Surface Mount	2W	N and P-Channel	Logic Level Gate	30V	3.5A，2.3A	100 mOhm @ 2.2A，10V	1V @ 250μA	190pF @ 15V
	IRF9956PBF	Infineon Technologies	Inquiry	-	-	MOSFET 2N-CH 30V 3.5A 8-SOIC MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 3.5A 8-SOIC	Tube	HEXFET	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	Surface Mount	2W	2 N-Channel (Dual)	Logic Level Gate	30V	3.5A	100 mOhm @ 2.2A，10V	1V @ 250μA	190pF @ 15V
	SI7501DN-T1-E3	Vishay Siliconix	Inquiry	-	-	MOSFET N/P-CH 30V 5.4A 1212-8 MOQ: 1 MPQ: 1	MOSFET N/P-CH 30V 5.4A 1212-8	Cut Tape (CT)	TrenchFET	-55°C ~ 150°C (TJ)	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual	Surface Mount	1.6W	N and P-Channel，Common Drain	Logic Level Gate	30V	5.4A，4.5A	35 mOhm @ 7.7A，10V	3V @ 250μA	-

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