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Discover 76 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | |
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ON Semiconductor |
18,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 2.9A MICROFET6
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Tape & Reel (TR) | PowerTrench | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | 700mW | 2 P-Channel (Dual) | Logic Level Gate | 30V | 2.9A | 90 mOhm @ 2.9A，4.5V | 1V @ 250μA | 530pF @ 15V | ||
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ON Semiconductor |
18,410
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 2.9A MICROFET6
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Cut Tape (CT) | PowerTrench | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | 700mW | 2 P-Channel (Dual) | Logic Level Gate | 30V | 2.9A | 90 mOhm @ 2.9A，4.5V | 1V @ 250μA | 530pF @ 15V | ||
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ON Semiconductor |
18,410
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 2.9A MICROFET6
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- | PowerTrench | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | 700mW | 2 P-Channel (Dual) | Logic Level Gate | 30V | 2.9A | 90 mOhm @ 2.9A，4.5V | 1V @ 250μA | 530pF @ 15V | ||
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Infineon Technologies |
3,577
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 7.6A/11A 8SOIC
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Tube | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.4W，2W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 7.6A，11A | 16.2 mOhm @ 7.6A，10V | 2.25V @ 25μA | 910pF @ 15V | ||
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Vishay Siliconix |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 40V POWERPAK 1212-8
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Tape & Reel (TR) | TrenchFET | -55°C ~ 150°C (TJ) | PowerPAK? 1212-8 Dual | PowerPAK? 1212-8 Dual | 23W | 2 N-Channel (Dual) | Standard | 40V | 34A (Tc) | 11.71 mOhm @ 5A，10V | 2.2V @ 250μA | 1100pF @ 20V | ||
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Vishay Siliconix |
2,336
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 40V POWERPAK 1212-8
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Cut Tape (CT) | TrenchFET | -55°C ~ 150°C (TJ) | PowerPAK? 1212-8 Dual | PowerPAK? 1212-8 Dual | 23W | 2 N-Channel (Dual) | Standard | 40V | 34A (Tc) | 11.71 mOhm @ 5A，10V | 2.2V @ 250μA | 1100pF @ 20V | ||
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Vishay Siliconix |
2,336
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 40V POWERPAK 1212-8
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- | TrenchFET | -55°C ~ 150°C (TJ) | PowerPAK? 1212-8 Dual | PowerPAK? 1212-8 Dual | 23W | 2 N-Channel (Dual) | Standard | 40V | 34A (Tc) | 11.71 mOhm @ 5A，10V | 2.2V @ 250μA | 1100pF @ 20V | ||
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Vishay Siliconix |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 4.9A 1212-8
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | PowerPAK? 1212-8 Dual | PowerPAK? 1212-8 Dual | 1.3W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 4.9A | 36 mOhm @ 6.8A，10V | 1.6V @ 250μA | - | ||
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Vishay Siliconix |
1,507
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 4.9A 1212-8
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Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | PowerPAK? 1212-8 Dual | PowerPAK? 1212-8 Dual | 1.3W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 4.9A | 36 mOhm @ 6.8A，10V | 1.6V @ 250μA | - | ||
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Vishay Siliconix |
1,507
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 4.9A 1212-8
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- | - | -55°C ~ 150°C (TJ) | PowerPAK? 1212-8 Dual | PowerPAK? 1212-8 Dual | 1.3W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 4.9A | 36 mOhm @ 6.8A，10V | 1.6V @ 250μA | - | ||
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Infineon Technologies |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 8.1A 8SOIC
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Tape & Reel (TR) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 8.1A | 17.9 mOhm @ 8.1A，4.5V | 1.1V @ 10μA | 1020pF @ 25V | ||
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Infineon Technologies |
3,886
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 8.1A 8SOIC
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Cut Tape (CT) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 8.1A | 17.9 mOhm @ 8.1A，4.5V | 1.1V @ 10μA | 1020pF @ 25V | ||
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Infineon Technologies |
3,886
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 8.1A 8SOIC
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- | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 8.1A | 17.9 mOhm @ 8.1A，4.5V | 1.1V @ 10μA | 1020pF @ 25V | ||
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Infineon Technologies |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 10A 8-SOIC
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Tape & Reel (TR) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 N-Channel (Dual) | Logic Level Gate | 20V | 10A | 13.4 mOhm @ 10A，10V | 2.55V @ 250μA | 960pF @ 10V | ||
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Infineon Technologies |
1,464
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 10A 8-SOIC
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Cut Tape (CT) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 N-Channel (Dual) | Logic Level Gate | 20V | 10A | 13.4 mOhm @ 10A，10V | 2.55V @ 250μA | 960pF @ 10V | ||
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Infineon Technologies |
1,464
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 10A 8-SOIC
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- | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 N-Channel (Dual) | Logic Level Gate | 20V | 10A | 13.4 mOhm @ 10A，10V | 2.55V @ 250μA | 960pF @ 10V | ||
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Infineon Technologies |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 7.6A/11A 8-SOIC
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Tape & Reel (TR) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.4W，2W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 7.6A，11A | 16.2 mOhm @ 7.6A，10V | 2.25V @ 25μA | 910pF @ 15V | ||
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Infineon Technologies |
2,452
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 7.6A/11A 8-SOIC
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Cut Tape (CT) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.4W，2W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 7.6A，11A | 16.2 mOhm @ 7.6A，10V | 2.25V @ 25μA | 910pF @ 15V | ||
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Infineon Technologies |
2,452
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 7.6A/11A 8-SOIC
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- | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.4W，2W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 7.6A，11A | 16.2 mOhm @ 7.6A，10V | 2.25V @ 25μA | 910pF @ 15V | ||
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Infineon Technologies |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 10A/12A 8-SOIC
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Tape & Reel (TR) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 N-Channel (Dual) | Logic Level Gate | 20V | 10A，12A | 9.3 mOhm @ 12A，10V | 2.55V @ 250μA | 900pF @ 10V |
