Supplier Device Package:
Power - Max:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 10 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Package / Case Supplier Device Package Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds
FDS8949
ON Semiconductor
12,500
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 40V 6A 8-SOIC
Tape & Reel (TR) PowerTrench 8-SOIC (0.154",3.90mm Width) 8-SO 2W 2 N-Channel (Dual) Logic Level Gate 40V 6A 29 mOhm @ 6A,10V 3V @ 250μA 955pF @ 20V
FDS8949
ON Semiconductor
13,241
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 40V 6A 8-SOIC
Cut Tape (CT) PowerTrench 8-SOIC (0.154",3.90mm Width) 8-SO 2W 2 N-Channel (Dual) Logic Level Gate 40V 6A 29 mOhm @ 6A,10V 3V @ 250μA 955pF @ 20V
FDS8949
ON Semiconductor
13,241
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 40V 6A 8-SOIC
- PowerTrench 8-SOIC (0.154",3.90mm Width) 8-SO 2W 2 N-Channel (Dual) Logic Level Gate 40V 6A 29 mOhm @ 6A,10V 3V @ 250μA 955pF @ 20V
SI5935CDC-T1-GE3
Vishay Siliconix
45,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 4A 1206-8
Tape & Reel (TR) TrenchFET 8-SMD,Flat Lead 1206-8 ChipFET? 3.1W 2 P-Channel (Dual) Standard 20V 4A 100 mOhm @ 3.1A,4.5V 1V @ 250μA 455pF @ 10V
SI5935CDC-T1-GE3
Vishay Siliconix
45,914
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 4A 1206-8
Cut Tape (CT) TrenchFET 8-SMD,Flat Lead 1206-8 ChipFET? 3.1W 2 P-Channel (Dual) Standard 20V 4A 100 mOhm @ 3.1A,4.5V 1V @ 250μA 455pF @ 10V
SI5935CDC-T1-GE3
Vishay Siliconix
45,914
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 4A 1206-8
- TrenchFET 8-SMD,Flat Lead 1206-8 ChipFET? 3.1W 2 P-Channel (Dual) Standard 20V 4A 100 mOhm @ 3.1A,4.5V 1V @ 250μA 455pF @ 10V
FDS8949-F085
ON Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 40V 6A 8-SOIC
Tape & Reel (TR) Automotive,AEC-Q101,PowerTrench 8-SOIC (0.154",3.90mm Width) 8-SO 2W 2 N-Channel (Dual) Logic Level Gate 40V 6A 29 mOhm @ 6A,10V 3V @ 250μA 955pF @ 20V
FDS8949-F085
ON Semiconductor
2,075
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 40V 6A 8-SOIC
Cut Tape (CT) Automotive,AEC-Q101,PowerTrench 8-SOIC (0.154",3.90mm Width) 8-SO 2W 2 N-Channel (Dual) Logic Level Gate 40V 6A 29 mOhm @ 6A,10V 3V @ 250μA 955pF @ 20V
FDS8949-F085
ON Semiconductor
2,075
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 40V 6A 8-SOIC
- Automotive,AEC-Q101,PowerTrench 8-SOIC (0.154",3.90mm Width) 8-SO 2W 2 N-Channel (Dual) Logic Level Gate 40V 6A 29 mOhm @ 6A,10V 3V @ 250μA 955pF @ 20V
SI5935CDC-T1-E3
Vishay Siliconix
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 4A 1206-8
Tape & Reel (TR) TrenchFET 8-SMD,Flat Lead 1206-8 ChipFET? 3.1W 2 P-Channel (Dual) Standard 20V 4A 100 mOhm @ 3.1A,4.5V 1V @ 250μA 455pF @ 10V