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- Rds On (Max) @ Id，Vgs：
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- Vgs(th) (Max) @ Id：
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Discover 18 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | |
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Infineon Technologies |
8,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 9.2A 8SOIC
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Tape & Reel (TR) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 P-Channel (Dual) | Logic Level Gate | 30V | 9.2A | 16.3 mOhm @ 9.2A，10V | 2.4V @ 25μA | 1740pF @ 25V | ||
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Infineon Technologies |
8,597
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 9.2A 8SOIC
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Cut Tape (CT) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 P-Channel (Dual) | Logic Level Gate | 30V | 9.2A | 16.3 mOhm @ 9.2A，10V | 2.4V @ 25μA | 1740pF @ 25V | ||
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Infineon Technologies |
8,597
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 9.2A 8SOIC
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- | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 P-Channel (Dual) | Logic Level Gate | 30V | 9.2A | 16.3 mOhm @ 9.2A，10V | 2.4V @ 25μA | 1740pF @ 25V | ||
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Infineon Technologies |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 55V 3.4A 8-SOIC
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Tape & Reel (TR) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 P-Channel (Dual) | Logic Level Gate | 55V | 3.4A | 105 mOhm @ 3.4A，10V | 1V @ 250μA | 690pF @ 25V | ||
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Infineon Technologies |
5,044
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 55V 3.4A 8-SOIC
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Cut Tape (CT) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 P-Channel (Dual) | Logic Level Gate | 55V | 3.4A | 105 mOhm @ 3.4A，10V | 1V @ 250μA | 690pF @ 25V | ||
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Infineon Technologies |
5,044
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 55V 3.4A 8-SOIC
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- | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 P-Channel (Dual) | Logic Level Gate | 55V | 3.4A | 105 mOhm @ 3.4A，10V | 1V @ 250μA | 690pF @ 25V | ||
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Infineon Technologies |
1,304
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 55V 3.4A 8-SOIC
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Tube | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 P-Channel (Dual) | Logic Level Gate | 55V | 3.4A | 105 mOhm @ 3.4A，10V | 1V @ 250μA | 690pF @ 25V | ||
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Infineon Technologies |
1,939
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 9.2A 8SOIC
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Tube | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 P-Channel (Dual) | Logic Level Gate | 30V | 9.2A | 16.3 mOhm @ 9.2A，10V | 2.4V @ 25μA | 1740pF @ 25V | ||
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Infineon Technologies |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 55V 3.4A 8SOIC
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Tape & Reel (TR) | Automotive，AEC-Q101，HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 P-Channel (Dual) | Logic Level Gate | 55V | 3.4A | 105 mOhm @ 3.4A，10V | 3V @ 250μA | 690pF @ 25V | ||
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Infineon Technologies |
1,358
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 55V 3.4A 8SOIC
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Cut Tape (CT) | Automotive，AEC-Q101，HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 P-Channel (Dual) | Logic Level Gate | 55V | 3.4A | 105 mOhm @ 3.4A，10V | 3V @ 250μA | 690pF @ 25V | ||
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Infineon Technologies |
1,358
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 55V 3.4A 8SOIC
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- | Automotive，AEC-Q101，HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 P-Channel (Dual) | Logic Level Gate | 55V | 3.4A | 105 mOhm @ 3.4A，10V | 3V @ 250μA | 690pF @ 25V | ||
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Vishay Siliconix |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 40V 30A PPAK SO-8
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Tape & Reel (TR) | Automotive，AEC-Q101，TrenchFET | -55°C ~ 175°C (TJ) | PowerPAK? SO-8 Dual | PowerPAK? SO-8 Dual | 48W | 2 N-Channel (Dual) | Standard | 40V | 30A | 9.3 mOhm @ 9.7A，10V | 2.5V @ 250μA | 1835pF @ 20V | ||
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Vishay Siliconix |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 40V 30A PPAK SO-8
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Cut Tape (CT) | Automotive，AEC-Q101，TrenchFET | -55°C ~ 175°C (TJ) | PowerPAK? SO-8 Dual | PowerPAK? SO-8 Dual | 48W | 2 N-Channel (Dual) | Standard | 40V | 30A | 9.3 mOhm @ 9.7A，10V | 2.5V @ 250μA | 1835pF @ 20V | ||
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Vishay Siliconix |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 40V 30A PPAK SO-8
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- | Automotive，AEC-Q101，TrenchFET | -55°C ~ 175°C (TJ) | PowerPAK? SO-8 Dual | PowerPAK? SO-8 Dual | 48W | 2 N-Channel (Dual) | Standard | 40V | 30A | 9.3 mOhm @ 9.7A，10V | 2.5V @ 250μA | 1835pF @ 20V | ||
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Infineon Technologies |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 55V 3.4A 8-SOIC
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Tube | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 P-Channel (Dual) | Logic Level Gate | 55V | 3.4A | 105 mOhm @ 3.4A，10V | 1V @ 250μA | 690pF @ 25V | ||
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Infineon Technologies |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 55V 3.4A 8SOIC
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Cut Tape (CT) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 P-Channel (Dual) | Logic Level Gate | 55V | 3.4A | 105 mOhm @ 3.4A，10V | 1V @ 250μA | 690pF @ 25V | ||
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Infineon Technologies |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 55V 3.4A 8SOIC
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- | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 P-Channel (Dual) | Logic Level Gate | 55V | 3.4A | 105 mOhm @ 3.4A，10V | 1V @ 250μA | 690pF @ 25V | ||
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Infineon Technologies |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 55V 3.4A 8SOIC
|
Tube | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 P-Channel (Dual) | Logic Level Gate | 55V | 3.4A | 105 mOhm @ 3.4A，10V | 3V @ 250μA | 690pF @ 25V |
