Drain to Source Voltage (Vdss):
Discover 48 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Package / Case Supplier Device Package Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds
FDS9958
ON Semiconductor
5,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 60V 2.9A 8-SO
Tape & Reel (TR) PowerTrench -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 900mW 2 P-Channel (Dual) Logic Level Gate 60V 2.9A 105 mOhm @ 2.9A,10V 3V @ 250μA 1020pF @ 30V
FDS9958
ON Semiconductor
6,326
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 60V 2.9A 8-SO
Cut Tape (CT) PowerTrench -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 900mW 2 P-Channel (Dual) Logic Level Gate 60V 2.9A 105 mOhm @ 2.9A,10V 3V @ 250μA 1020pF @ 30V
FDS9958
ON Semiconductor
6,326
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 60V 2.9A 8-SO
- PowerTrench -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 900mW 2 P-Channel (Dual) Logic Level Gate 60V 2.9A 105 mOhm @ 2.9A,10V 3V @ 250μA 1020pF @ 30V
SIA921EDJ-T1-GE3
Vishay Siliconix
3,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 4.5A SC70-6
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) PowerPAK? SC-70-6 Dual PowerPAK? SC-70-6 Dual 7.8W 2 P-Channel (Dual) Logic Level Gate 20V 4.5A 59 mOhm @ 3.6A,4.5V 1.4V @ 250μA -
SIA921EDJ-T1-GE3
Vishay Siliconix
4,933
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 4.5A SC70-6
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) PowerPAK? SC-70-6 Dual PowerPAK? SC-70-6 Dual 7.8W 2 P-Channel (Dual) Logic Level Gate 20V 4.5A 59 mOhm @ 3.6A,4.5V 1.4V @ 250μA -
SIA921EDJ-T1-GE3
Vishay Siliconix
4,933
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 4.5A SC70-6
- TrenchFET -55°C ~ 150°C (TJ) PowerPAK? SC-70-6 Dual PowerPAK? SC-70-6 Dual 7.8W 2 P-Channel (Dual) Logic Level Gate 20V 4.5A 59 mOhm @ 3.6A,4.5V 1.4V @ 250μA -
SI4804CDY-T1-GE3
Vishay Siliconix
5,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 8A 8SOIC
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 3.1W 2 N-Channel (Dual) Standard 30V 8A 22 mOhm @ 7.5A,10V 2.4V @ 250μA 865pF @ 15V
SI4804CDY-T1-GE3
Vishay Siliconix
9,585
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 8A 8SOIC
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 3.1W 2 N-Channel (Dual) Standard 30V 8A 22 mOhm @ 7.5A,10V 2.4V @ 250μA 865pF @ 15V
SI4804CDY-T1-GE3
Vishay Siliconix
9,585
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 8A 8SOIC
- TrenchFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 3.1W 2 N-Channel (Dual) Standard 30V 8A 22 mOhm @ 7.5A,10V 2.4V @ 250μA 865pF @ 15V
IRF7380TRPBF
Infineon Technologies
8,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 80V 3.6A 8-SOIC
Tape & Reel (TR) HEXFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2W 2 N-Channel (Dual) Logic Level Gate 80V 3.6A 73 mOhm @ 2.2A,10V 4V @ 250μA 660pF @ 25V
IRF7380TRPBF
Infineon Technologies
8,048
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 80V 3.6A 8-SOIC
Cut Tape (CT) HEXFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2W 2 N-Channel (Dual) Logic Level Gate 80V 3.6A 73 mOhm @ 2.2A,10V 4V @ 250μA 660pF @ 25V
IRF7380TRPBF
Infineon Technologies
8,048
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 80V 3.6A 8-SOIC
- HEXFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2W 2 N-Channel (Dual) Logic Level Gate 80V 3.6A 73 mOhm @ 2.2A,10V 4V @ 250μA 660pF @ 25V
IPG20N06S2L35AATMA1
Infineon Technologies
5,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 8TDSON
Tape & Reel (TR) Automotive,AEC-Q101,OptiMOS -55°C ~ 175°C (TJ) 8-PowerVDFN PG-TDSON-8-10 65W 2 N-Channel (Dual) Logic Level Gate 55V 2A (Tc) 35 mOhm @ 15A,10V 2V @ 27μA 790pF @ 25V
IPG20N06S2L35AATMA1
Infineon Technologies
9,110
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 8TDSON
Cut Tape (CT) Automotive,AEC-Q101,OptiMOS -55°C ~ 175°C (TJ) 8-PowerVDFN PG-TDSON-8-10 65W 2 N-Channel (Dual) Logic Level Gate 55V 2A (Tc) 35 mOhm @ 15A,10V 2V @ 27μA 790pF @ 25V
IPG20N06S2L35AATMA1
Infineon Technologies
9,110
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 8TDSON
- Automotive,AEC-Q101,OptiMOS -55°C ~ 175°C (TJ) 8-PowerVDFN PG-TDSON-8-10 65W 2 N-Channel (Dual) Logic Level Gate 55V 2A (Tc) 35 mOhm @ 15A,10V 2V @ 27μA 790pF @ 25V
FDS9958-F085
ON Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 60V 2.9A 8-SOIC
Tape & Reel (TR) Automotive,AEC-Q101,PowerTrench -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 900mW 2 P-Channel (Dual) Logic Level Gate 60V 2.9A 105 mOhm @ 2.9A,10V 3V @ 250μA 1020pF @ 30V
FDS9958-F085
ON Semiconductor
2,138
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 60V 2.9A 8-SOIC
Cut Tape (CT) Automotive,AEC-Q101,PowerTrench -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 900mW 2 P-Channel (Dual) Logic Level Gate 60V 2.9A 105 mOhm @ 2.9A,10V 3V @ 250μA 1020pF @ 30V
FDS9958-F085
ON Semiconductor
2,138
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 60V 2.9A 8-SOIC
- Automotive,AEC-Q101,PowerTrench -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 900mW 2 P-Channel (Dual) Logic Level Gate 60V 2.9A 105 mOhm @ 2.9A,10V 3V @ 250μA 1020pF @ 30V
IPG20N06S2L35ATMA1
Infineon Technologies
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 55V 20A TDSON-8-4
Tape & Reel (TR) Automotive,AEC-Q101,OptiMOS -55°C ~ 175°C (TJ) 8-PowerVDFN PG-TDSON-8-4 65W 2 N-Channel (Dual) Logic Level Gate 55V 20A 35 mOhm @ 15A,10V 2V @ 27μA 790pF @ 25V
IPG20N06S2L35ATMA1
Infineon Technologies
4,049
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 55V 20A TDSON-8-4
Cut Tape (CT) Automotive,AEC-Q101,OptiMOS -55°C ~ 175°C (TJ) 8-PowerVDFN PG-TDSON-8-4 65W 2 N-Channel (Dual) Logic Level Gate 55V 20A 35 mOhm @ 15A,10V 2V @ 27μA 790pF @ 25V