FETs, MOSFETs - Arrays - Zui Ai Technology（Taiwan）Company.

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Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Operating Temperature	Package / Case	Supplier Device Package	Power - Max	FET Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id
Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Operating Temperature	Package / Case	Supplier Device Package	Power - Max	FET Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id
	ZXMHC3A01T8TA	Diodes Incorporated	7,000	3 days	-	MOSFET 2N/2P-CH 30V 2.7A/2A SM8 MOQ: 1 MPQ: 1	MOSFET 2N/2P-CH 30V 2.7A/2A SM8	Tape & Reel (TR)	-55°C ~ 150°C (TJ)	SOT-223-8	SM8	1.3W	2 N and 2 P-Channel (H-Bridge)	2.7A，2A	120 mOhm @ 2.5A，10V	3V @ 250μA
	ZXMHC3A01T8TA	Diodes Incorporated	8,466	3 days	-	MOSFET 2N/2P-CH 30V 2.7A/2A SM8 MOQ: 1 MPQ: 1	MOSFET 2N/2P-CH 30V 2.7A/2A SM8	Cut Tape (CT)	-55°C ~ 150°C (TJ)	SOT-223-8	SM8	1.3W	2 N and 2 P-Channel (H-Bridge)	2.7A，2A	120 mOhm @ 2.5A，10V	3V @ 250μA
	ZXMHC3A01T8TA	Diodes Incorporated	8,466	3 days	-	MOSFET 2N/2P-CH 30V 2.7A/2A SM8 MOQ: 1 MPQ: 1	MOSFET 2N/2P-CH 30V 2.7A/2A SM8	-	-55°C ~ 150°C (TJ)	SOT-223-8	SM8	1.3W	2 N and 2 P-Channel (H-Bridge)	2.7A，2A	120 mOhm @ 2.5A，10V	3V @ 250μA
	ZXMC3AMCTA	Diodes Incorporated	3,000	3 days	-	MOSFET N/P-CH 30V 2.9A/2.1A 8DFN MOQ: 1 MPQ: 1	MOSFET N/P-CH 30V 2.9A/2.1A 8DFN	Tape & Reel (TR)	-55°C ~ 150°C (TJ)	8-WDFN Exposed Pad	8-DFN (3x2)	1.7W	N and P-Channel	2.9A，2.1A	120 mOhm @ 2.5A，10V	3V @ 250μA
	ZXMC3AMCTA	Diodes Incorporated	4,404	3 days	-	MOSFET N/P-CH 30V 2.9A/2.1A 8DFN MOQ: 1 MPQ: 1	MOSFET N/P-CH 30V 2.9A/2.1A 8DFN	Cut Tape (CT)	-55°C ~ 150°C (TJ)	8-WDFN Exposed Pad	8-DFN (3x2)	1.7W	N and P-Channel	2.9A，2.1A	120 mOhm @ 2.5A，10V	3V @ 250μA
	ZXMC3AMCTA	Diodes Incorporated	4,404	3 days	-	MOSFET N/P-CH 30V 2.9A/2.1A 8DFN MOQ: 1 MPQ: 1	MOSFET N/P-CH 30V 2.9A/2.1A 8DFN	-	-55°C ~ 150°C (TJ)	8-WDFN Exposed Pad	8-DFN (3x2)	1.7W	N and P-Channel	2.9A，2.1A	120 mOhm @ 2.5A，10V	3V @ 250μA
	ZXMN3AMCTA	Diodes Incorporated	3,000	3 days	-	MOSFET 2N-CH 30V 2.9A DFN MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 2.9A DFN	Tape & Reel (TR)	-55°C ~ 150°C (TJ)	8-WDFN Exposed Pad	8-DFN (3x2)	1.7W	2 N-Channel (Dual)	2.9A	120 mOhm @ 2.5A，10V	3V @ 250μA
	ZXMN3AMCTA	Diodes Incorporated	765	3 days	-	MOSFET 2N-CH 30V 2.9A DFN MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 2.9A DFN	Cut Tape (CT)	-55°C ~ 150°C (TJ)	8-WDFN Exposed Pad	8-DFN (3x2)	1.7W	2 N-Channel (Dual)	2.9A	120 mOhm @ 2.5A，10V	3V @ 250μA
	ZXMN3AMCTA	Diodes Incorporated	Inquiry	-	-	MOSFET 2N-CH 30V 2.9A DFN MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 2.9A DFN	-	-55°C ~ 150°C (TJ)	8-WDFN Exposed Pad	8-DFN (3x2)	1.7W	2 N-Channel (Dual)	2.9A	120 mOhm @ 2.5A，10V	3V @ 250μA
	ZXMN3AM832TA	Diodes Incorporated	Inquiry	-	-	MOSFET 2N-CH 30V 2.9A 8MLP MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 2.9A 8MLP	Tape & Reel (TR)	-55°C ~ 150°C (TJ)	8-VDFN Exposed Pad	8-MLP (3x2)	1.13W	2 N-Channel (Dual)	2.9A	120 mOhm @ 2.5A，10V	1V @ 250μA (Min)
	ZXMN3AM832TA	Diodes Incorporated	2,769	3 days	-	MOSFET 2N-CH 30V 2.9A 8MLP MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 2.9A 8MLP	Cut Tape (CT)	-55°C ~ 150°C (TJ)	8-VDFN Exposed Pad	8-MLP (3x2)	1.13W	2 N-Channel (Dual)	2.9A	120 mOhm @ 2.5A，10V	1V @ 250μA (Min)
	ZXMN3AM832TA	Diodes Incorporated	2,769	3 days	-	MOSFET 2N-CH 30V 2.9A 8MLP MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 2.9A 8MLP	-	-55°C ~ 150°C (TJ)	8-VDFN Exposed Pad	8-MLP (3x2)	1.13W	2 N-Channel (Dual)	2.9A	120 mOhm @ 2.5A，10V	1V @ 250μA (Min)
	ZXMC3AM832TA	Diodes Incorporated	573	3 days	-	MOSFET N/P-CH 30V 2.9A/2.1A 8MLP MOQ: 1 MPQ: 1	MOSFET N/P-CH 30V 2.9A/2.1A 8MLP	Cut Tape (CT)	-	8-VDFN Exposed Pad	8-MLP (3x3)	1.7W	N and P-Channel	2.9A，2.1A	120 mOhm @ 2.5A，10V	1V @ 250μA (Min)
	ZXMC3AM832TA	Diodes Incorporated	573	3 days	-	MOSFET N/P-CH 30V 2.9A/2.1A 8MLP MOQ: 1 MPQ: 1	MOSFET N/P-CH 30V 2.9A/2.1A 8MLP	-	-	8-VDFN Exposed Pad	8-MLP (3x3)	1.7W	N and P-Channel	2.9A，2.1A	120 mOhm @ 2.5A，10V	1V @ 250μA (Min)
	ZXMHC3A01N8TC	Diodes Incorporated	Inquiry	-	-	MOSFET 2N/2P-CH 30V 8-SOIC MOQ: 1 MPQ: 1	MOSFET 2N/2P-CH 30V 8-SOIC	Tape & Reel (TR)	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SOP	870mW	2 N and 2 P-Channel (H-Bridge)	2.17A，1.64A	125 mOhm @ 2.5A，10V	3V @ 250μA
	ZXMHC3A01N8TC	Diodes Incorporated	978	3 days	-	MOSFET 2N/2P-CH 30V 8-SOIC MOQ: 1 MPQ: 1	MOSFET 2N/2P-CH 30V 8-SOIC	Cut Tape (CT)	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SOP	870mW	2 N and 2 P-Channel (H-Bridge)	2.17A，1.64A	125 mOhm @ 2.5A，10V	3V @ 250μA
	ZXMHC3A01N8TC	Diodes Incorporated	978	3 days	-	MOSFET 2N/2P-CH 30V 8-SOIC MOQ: 1 MPQ: 1	MOSFET 2N/2P-CH 30V 8-SOIC	-	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SOP	870mW	2 N and 2 P-Channel (H-Bridge)	2.17A，1.64A	125 mOhm @ 2.5A，10V	3V @ 250μA
	ZXMC3AM832TA	Diodes Incorporated	Inquiry	-	-	MOSFET N/P-CH 30V 2.9A/2.1A 8MLP MOQ: 1 MPQ: 1	MOSFET N/P-CH 30V 2.9A/2.1A 8MLP	Tape & Reel (TR)	-	8-VDFN Exposed Pad	8-MLP (3x2)	1.7W	N and P-Channel	2.9A，2.1A	120 mOhm @ 2.5A，10V	1V @ 250μA (Min)
	ZXMC3AM832TA	Diodes Incorporated	Inquiry	-	-	MOSFET N/P-CH 30V 2.9A/2.1A 8MLP MOQ: 1 MPQ: 1	MOSFET N/P-CH 30V 2.9A/2.1A 8MLP	Cut Tape (CT)	-	8-VDFN Exposed Pad	8-MLP (3x3)	1.7W	N and P-Channel	2.9A，2.1A	120 mOhm @ 2.5A，10V	1V @ 250μA (Min)
	ZXMC3AM832TA	Diodes Incorporated	Inquiry	-	-	MOSFET N/P-CH 30V 2.9A/2.1A 8MLP MOQ: 1 MPQ: 1	MOSFET N/P-CH 30V 2.9A/2.1A 8MLP	-	-	8-VDFN Exposed Pad	8-MLP (3x2)	1.7W	N and P-Channel	2.9A，2.1A	120 mOhm @ 2.5A，10V	1V @ 250μA (Min)